Selective sbn4 etching in Si3N4/SiO2 pair-layer stack using non-H3PO4-based superheated water

Changjin Son; Sangwoo Lim

doi:10.1149/09202.0143ecst

Selective sbn4 etching in Si₃N₄/SiO₂ pair-layer stack using non-H₃PO₄-based superheated water

Changjin Son, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

The selective etching of Si₃N₄ and SiO₂ is a crucial step in the semiconductor process. In general, hot phosphoric acid is used to selectively etch Si₃N₄ to SiO₂. In this study, superheated water was used for selective etching of Si₃N₄ to SiO₂. The Si₃N₄and SiO₂ etching rates depend on the OH^- concentration of superheated water. In addition, the etching rate of Si₃N₄and Si₃N₄-to-SiO₂ etch selectivity were improved by adding proper additives to superheated water. In particular, using HC1^-, HF- and H₂SiO₃added superheated water, a horizontal SiO₂ trench structure was successfully achieved on a patterned Si₃N₄/SiO₂ structure through selective etching of Si₃N₄ without thinning of the SiO₂ layers.

Original language	English
Title of host publication	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019
Editors	Koichiro Saga, Paul W. Mertens, Takeshi Hattori, Jerzy Ruzyllo, Anthony J. Muscat
Publisher	Electrochemical Society Inc.
Pages	143-148
Number of pages	6
Edition	2
ISBN (Electronic)	9781607688761
ISBN (Print)	9781607688761
DOIs	https://doi.org/10.1149/09202.0143ecst
Publication status	Published - 2019
Event	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting - Atlanta, United States Duration: 2019 Oct 13 → 2019 Oct 17

Publication series

Name	ECS Transactions
Number	2
Volume	92
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting
Country/Territory	United States
City	Atlanta
Period	19/10/13 → 19/10/17

Bibliographical note

Funding Information:
This research was supported by the Ministry of Trade, Industry & Energy (10080628) and Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor device.

Publisher Copyright:
© The Electrochemical Society.

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/09202.0143ecst

Cite this

Son, C., & Lim, S. (2019). Selective sbn4 etching in Si₃N₄/SiO₂ pair-layer stack using non-H₃PO₄-based superheated water. In K. Saga, P. W. Mertens, T. Hattori, J. Ruzyllo, & A. J. Muscat (Eds.), 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 (2 ed., pp. 143-148). (ECS Transactions; Vol. 92, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/09202.0143ecst

Son, Changjin ; Lim, Sangwoo. / Selective sbn4 etching in Si₃N₄/SiO₂ pair-layer stack using non-H₃PO₄-based superheated water. 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. editor / Koichiro Saga ; Paul W. Mertens ; Takeshi Hattori ; Jerzy Ruzyllo ; Anthony J. Muscat. 2. ed. Electrochemical Society Inc., 2019. pp. 143-148 (ECS Transactions; 2).

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title = "Selective sbn4 etching in Si3N4/SiO2 pair-layer stack using non-H3PO4-based superheated water",

abstract = "The selective etching of Si3N4 and SiO2 is a crucial step in the semiconductor process. In general, hot phosphoric acid is used to selectively etch Si3N4 to SiO2. In this study, superheated water was used for selective etching of Si3N4 to SiO2. The Si3N4and SiO2 etching rates depend on the OH- concentration of superheated water. In addition, the etching rate of Si3N4and Si3N4-to-SiO2 etch selectivity were improved by adding proper additives to superheated water. In particular, using HC1-, HF- and H2SiO3added superheated water, a horizontal SiO2 trench structure was successfully achieved on a patterned Si3N4/SiO2 structure through selective etching of Si3N4 without thinning of the SiO2 layers.",

author = "Changjin Son and Sangwoo Lim",

note = "Funding Information: This research was supported by the Ministry of Trade, Industry & Energy (10080628) and Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor device. Publisher Copyright: {\textcopyright} The Electrochemical Society.; 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting ; Conference date: 13-10-2019 Through 17-10-2019",

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Son, C & Lim, S 2019, Selective sbn4 etching in Si₃N₄/SiO₂ pair-layer stack using non-H₃PO₄-based superheated water. in K Saga, PW Mertens, T Hattori, J Ruzyllo & AJ Muscat (eds), 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. 2 edn, ECS Transactions, no. 2, vol. 92, Electrochemical Society Inc., pp. 143-148, 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting, Atlanta, United States, 19/10/13. https://doi.org/10.1149/09202.0143ecst

Selective sbn4 etching in Si₃N₄/SiO₂ pair-layer stack using non-H₃PO₄-based superheated water. / Son, Changjin; Lim, Sangwoo.

16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. ed. / Koichiro Saga; Paul W. Mertens; Takeshi Hattori; Jerzy Ruzyllo; Anthony J. Muscat. 2. ed. Electrochemical Society Inc., 2019. p. 143-148 (ECS Transactions; Vol. 92, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Son, Changjin

AU - Lim, Sangwoo

N1 - Funding Information: This research was supported by the Ministry of Trade, Industry & Energy (10080628) and Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor device. Publisher Copyright: © The Electrochemical Society.

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N2 - The selective etching of Si3N4 and SiO2 is a crucial step in the semiconductor process. In general, hot phosphoric acid is used to selectively etch Si3N4 to SiO2. In this study, superheated water was used for selective etching of Si3N4 to SiO2. The Si3N4and SiO2 etching rates depend on the OH- concentration of superheated water. In addition, the etching rate of Si3N4and Si3N4-to-SiO2 etch selectivity were improved by adding proper additives to superheated water. In particular, using HC1-, HF- and H2SiO3added superheated water, a horizontal SiO2 trench structure was successfully achieved on a patterned Si3N4/SiO2 structure through selective etching of Si3N4 without thinning of the SiO2 layers.

AB - The selective etching of Si3N4 and SiO2 is a crucial step in the semiconductor process. In general, hot phosphoric acid is used to selectively etch Si3N4 to SiO2. In this study, superheated water was used for selective etching of Si3N4 to SiO2. The Si3N4and SiO2 etching rates depend on the OH- concentration of superheated water. In addition, the etching rate of Si3N4and Si3N4-to-SiO2 etch selectivity were improved by adding proper additives to superheated water. In particular, using HC1-, HF- and H2SiO3added superheated water, a horizontal SiO2 trench structure was successfully achieved on a patterned Si3N4/SiO2 structure through selective etching of Si3N4 without thinning of the SiO2 layers.

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