The selective etching of Si3N4 and SiO2 is a crucial step in the semiconductor process. In general, hot phosphoric acid is used to selectively etch Si3N4 to SiO2. In this study, superheated water was used for selective etching of Si3N4 to SiO2. The Si3N4and SiO2 etching rates depend on the OH- concentration of superheated water. In addition, the etching rate of Si3N4and Si3N4-to-SiO2 etch selectivity were improved by adding proper additives to superheated water. In particular, using HC1-, HF- and H2SiO3added superheated water, a horizontal SiO2 trench structure was successfully achieved on a patterned Si3N4/SiO2 structure through selective etching of Si3N4 without thinning of the SiO2 layers.
|Title of host publication||16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019|
|Editors||Koichiro Saga, Paul W. Mertens, Takeshi Hattori, Jerzy Ruzyllo, Anthony J. Muscat|
|Publisher||Electrochemical Society Inc.|
|Number of pages||6|
|Publication status||Published - 2019|
|Event||16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting - Atlanta, United States|
Duration: 2019 Oct 13 → 2019 Oct 17
|Conference||16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting|
|Period||19/10/13 → 19/10/17|
Bibliographical noteFunding Information:
This research was supported by the Ministry of Trade, Industry & Energy (10080628) and Korea Semiconductor Research Consortium Support Program for the development of the future semiconductor device.
© The Electrochemical Society.
All Science Journal Classification (ASJC) codes