Selective SnO x Atomic Layer Deposition Driven by Oxygen Reactants

Jung Hoon Lee, Mi Yoo, Donghee Kang, Hyun Mo Lee, Wan Ho Choi, Jung Woo Park, Yeonjin Yi, Hyun You Kim, Jin Seong Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

SnO x thin films were successfully deposited by the thermal atomic layer deposition (ALD) method using N,N′-tert-butyl-1,1-dimethylethylenediamine stannylene(II) as a precursor and ozone and water as reactants. The growth of SnO and SnO 2 films could be easily controlled by employing different reactants and utilizing different ozone and water concentrations, respectively. The formation of both SnO and SnO 2 films exhibited typical surface-limiting reaction characteristics, although their growth behaviors differ from one another. The combined studies of density functional theory calculations and experimental analyses showed that the difference in growth behavior of the SnO and SnO 2 films can be attributed to the stability of ozone and water on the SnO 2 and SnO films. SnO and SnO 2 films have different crystal structures and both films were crystallized from the amorphous to polycrystalline states following an increase in the deposition temperature. The absorbance and refractive index of the thin films were investigated using ultraviolet-visible spectroscopy (UV-vis) and spectroscopic ellipsometry (SE), respectively. SnO x films formed using ozone and water as a reactant showed an optical band gap of 3.60-3.17 eV and 2.24-2.30 eV and refractive indices of ∼2.0 and ∼2.6, respectively, which correspond to values typical of SnO 2 and SnO. The bilayer structure of SnO/SnO 2 was successfully fabricated on indium tin oxide (ITO) glass with nickel as a top electrode at 100 °C. The SnO/SnO 2 bilayer exhibited diode characteristics with a current rectification ratio of 15. Our results present a simple but highly versatile growth method for producing multilayer oxide films with electronic properties that can be finely controlled.

Original languageEnglish
Pages (from-to)33335-33342
Number of pages8
JournalACS Applied Materials and Interfaces
Volume10
Issue number39
DOIs
Publication statusPublished - 2018 Oct 3

Fingerprint

Atomic layer deposition
Oxygen
Ozone
Water
Refractive index
ITO glass
Thin films
Spectroscopic ellipsometry
Multilayer films
Ultraviolet visible spectroscopy
Optical band gaps
Nickel
Electronic properties
Oxide films
Density functional theory
Diodes
Crystal structure
Electrodes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Lee, J. H., Yoo, M., Kang, D., Lee, H. M., Choi, W. H., Park, J. W., ... Park, J. S. (2018). Selective SnO x Atomic Layer Deposition Driven by Oxygen Reactants ACS Applied Materials and Interfaces, 10(39), 33335-33342. https://doi.org/10.1021/acsami.8b12251
Lee, Jung Hoon ; Yoo, Mi ; Kang, Donghee ; Lee, Hyun Mo ; Choi, Wan Ho ; Park, Jung Woo ; Yi, Yeonjin ; Kim, Hyun You ; Park, Jin Seong. / Selective SnO x Atomic Layer Deposition Driven by Oxygen Reactants In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 39. pp. 33335-33342.
@article{19b5e8f51cb24116a665b31704f40a89,
title = "Selective SnO x Atomic Layer Deposition Driven by Oxygen Reactants",
abstract = "SnO x thin films were successfully deposited by the thermal atomic layer deposition (ALD) method using N,N′-tert-butyl-1,1-dimethylethylenediamine stannylene(II) as a precursor and ozone and water as reactants. The growth of SnO and SnO 2 films could be easily controlled by employing different reactants and utilizing different ozone and water concentrations, respectively. The formation of both SnO and SnO 2 films exhibited typical surface-limiting reaction characteristics, although their growth behaviors differ from one another. The combined studies of density functional theory calculations and experimental analyses showed that the difference in growth behavior of the SnO and SnO 2 films can be attributed to the stability of ozone and water on the SnO 2 and SnO films. SnO and SnO 2 films have different crystal structures and both films were crystallized from the amorphous to polycrystalline states following an increase in the deposition temperature. The absorbance and refractive index of the thin films were investigated using ultraviolet-visible spectroscopy (UV-vis) and spectroscopic ellipsometry (SE), respectively. SnO x films formed using ozone and water as a reactant showed an optical band gap of 3.60-3.17 eV and 2.24-2.30 eV and refractive indices of ∼2.0 and ∼2.6, respectively, which correspond to values typical of SnO 2 and SnO. The bilayer structure of SnO/SnO 2 was successfully fabricated on indium tin oxide (ITO) glass with nickel as a top electrode at 100 °C. The SnO/SnO 2 bilayer exhibited diode characteristics with a current rectification ratio of 15. Our results present a simple but highly versatile growth method for producing multilayer oxide films with electronic properties that can be finely controlled.",
author = "Lee, {Jung Hoon} and Mi Yoo and Donghee Kang and Lee, {Hyun Mo} and Choi, {Wan Ho} and Park, {Jung Woo} and Yeonjin Yi and Kim, {Hyun You} and Park, {Jin Seong}",
year = "2018",
month = "10",
day = "3",
doi = "10.1021/acsami.8b12251",
language = "English",
volume = "10",
pages = "33335--33342",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "39",

}

Lee, JH, Yoo, M, Kang, D, Lee, HM, Choi, WH, Park, JW, Yi, Y, Kim, HY & Park, JS 2018, ' Selective SnO x Atomic Layer Deposition Driven by Oxygen Reactants ', ACS Applied Materials and Interfaces, vol. 10, no. 39, pp. 33335-33342. https://doi.org/10.1021/acsami.8b12251

Selective SnO x Atomic Layer Deposition Driven by Oxygen Reactants . / Lee, Jung Hoon; Yoo, Mi; Kang, Donghee; Lee, Hyun Mo; Choi, Wan Ho; Park, Jung Woo; Yi, Yeonjin; Kim, Hyun You; Park, Jin Seong.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 39, 03.10.2018, p. 33335-33342.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Selective SnO x Atomic Layer Deposition Driven by Oxygen Reactants

AU - Lee, Jung Hoon

AU - Yoo, Mi

AU - Kang, Donghee

AU - Lee, Hyun Mo

AU - Choi, Wan Ho

AU - Park, Jung Woo

AU - Yi, Yeonjin

AU - Kim, Hyun You

AU - Park, Jin Seong

PY - 2018/10/3

Y1 - 2018/10/3

N2 - SnO x thin films were successfully deposited by the thermal atomic layer deposition (ALD) method using N,N′-tert-butyl-1,1-dimethylethylenediamine stannylene(II) as a precursor and ozone and water as reactants. The growth of SnO and SnO 2 films could be easily controlled by employing different reactants and utilizing different ozone and water concentrations, respectively. The formation of both SnO and SnO 2 films exhibited typical surface-limiting reaction characteristics, although their growth behaviors differ from one another. The combined studies of density functional theory calculations and experimental analyses showed that the difference in growth behavior of the SnO and SnO 2 films can be attributed to the stability of ozone and water on the SnO 2 and SnO films. SnO and SnO 2 films have different crystal structures and both films were crystallized from the amorphous to polycrystalline states following an increase in the deposition temperature. The absorbance and refractive index of the thin films were investigated using ultraviolet-visible spectroscopy (UV-vis) and spectroscopic ellipsometry (SE), respectively. SnO x films formed using ozone and water as a reactant showed an optical band gap of 3.60-3.17 eV and 2.24-2.30 eV and refractive indices of ∼2.0 and ∼2.6, respectively, which correspond to values typical of SnO 2 and SnO. The bilayer structure of SnO/SnO 2 was successfully fabricated on indium tin oxide (ITO) glass with nickel as a top electrode at 100 °C. The SnO/SnO 2 bilayer exhibited diode characteristics with a current rectification ratio of 15. Our results present a simple but highly versatile growth method for producing multilayer oxide films with electronic properties that can be finely controlled.

AB - SnO x thin films were successfully deposited by the thermal atomic layer deposition (ALD) method using N,N′-tert-butyl-1,1-dimethylethylenediamine stannylene(II) as a precursor and ozone and water as reactants. The growth of SnO and SnO 2 films could be easily controlled by employing different reactants and utilizing different ozone and water concentrations, respectively. The formation of both SnO and SnO 2 films exhibited typical surface-limiting reaction characteristics, although their growth behaviors differ from one another. The combined studies of density functional theory calculations and experimental analyses showed that the difference in growth behavior of the SnO and SnO 2 films can be attributed to the stability of ozone and water on the SnO 2 and SnO films. SnO and SnO 2 films have different crystal structures and both films were crystallized from the amorphous to polycrystalline states following an increase in the deposition temperature. The absorbance and refractive index of the thin films were investigated using ultraviolet-visible spectroscopy (UV-vis) and spectroscopic ellipsometry (SE), respectively. SnO x films formed using ozone and water as a reactant showed an optical band gap of 3.60-3.17 eV and 2.24-2.30 eV and refractive indices of ∼2.0 and ∼2.6, respectively, which correspond to values typical of SnO 2 and SnO. The bilayer structure of SnO/SnO 2 was successfully fabricated on indium tin oxide (ITO) glass with nickel as a top electrode at 100 °C. The SnO/SnO 2 bilayer exhibited diode characteristics with a current rectification ratio of 15. Our results present a simple but highly versatile growth method for producing multilayer oxide films with electronic properties that can be finely controlled.

UR - http://www.scopus.com/inward/record.url?scp=85053841941&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053841941&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b12251

DO - 10.1021/acsami.8b12251

M3 - Article

C2 - 30199618

AN - SCOPUS:85053841941

VL - 10

SP - 33335

EP - 33342

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 39

ER -