Selective wet etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT

Jong Lam Lee, Eun A. Moon, Jungwoo Oh, Seong Wook Ryu, Hyung Mo Yoo

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A selective etching solution of GaAs over Al0.24Ga0.76As, composed of acid-buffer solution (citric acid monohydrate+potassium citrate) and H2O2, has been developed for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT applications. The best selectivity of 776 was achieved using the mixed solution (citric acid-buffer solution:H2O2 = 5:1). The etch rate of GaAs in the solution is as low as 46.6 angstroms/s. Both the low etch rate of GaAs and the high selectivity exhibit the standard deviation of pinch-off voltage of 1.0 μm-gate PHEMTs as low as ±0.029 V across a 3 in wafer. This demonstrates the applicability of this solution to the gate recess process.

Original languageEnglish
Pages (from-to)1974-1975
Number of pages2
JournalElectronics Letters
Volume36
Issue number23
DOIs
Publication statusPublished - 2000 Nov 9

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Wet etching
Citric acid
Potassium
Etching
Acids
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Lee, Jong Lam ; Moon, Eun A. ; Oh, Jungwoo ; Ryu, Seong Wook ; Yoo, Hyung Mo. / Selective wet etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT. In: Electronics Letters. 2000 ; Vol. 36, No. 23. pp. 1974-1975.
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abstract = "A selective etching solution of GaAs over Al0.24Ga0.76As, composed of acid-buffer solution (citric acid monohydrate+potassium citrate) and H2O2, has been developed for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT applications. The best selectivity of 776 was achieved using the mixed solution (citric acid-buffer solution:H2O2 = 5:1). The etch rate of GaAs in the solution is as low as 46.6 angstroms/s. Both the low etch rate of GaAs and the high selectivity exhibit the standard deviation of pinch-off voltage of 1.0 μm-gate PHEMTs as low as ±0.029 V across a 3 in wafer. This demonstrates the applicability of this solution to the gate recess process.",
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Selective wet etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT. / Lee, Jong Lam; Moon, Eun A.; Oh, Jungwoo; Ryu, Seong Wook; Yoo, Hyung Mo.

In: Electronics Letters, Vol. 36, No. 23, 09.11.2000, p. 1974-1975.

Research output: Contribution to journalArticle

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T1 - Selective wet etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT

AU - Lee, Jong Lam

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AU - Oh, Jungwoo

AU - Ryu, Seong Wook

AU - Yoo, Hyung Mo

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AB - A selective etching solution of GaAs over Al0.24Ga0.76As, composed of acid-buffer solution (citric acid monohydrate+potassium citrate) and H2O2, has been developed for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT applications. The best selectivity of 776 was achieved using the mixed solution (citric acid-buffer solution:H2O2 = 5:1). The etch rate of GaAs in the solution is as low as 46.6 angstroms/s. Both the low etch rate of GaAs and the high selectivity exhibit the standard deviation of pinch-off voltage of 1.0 μm-gate PHEMTs as low as ±0.029 V across a 3 in wafer. This demonstrates the applicability of this solution to the gate recess process.

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