Selective wet etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT

Jong Lam Lee, Eun A. Moon, Jung Woo Oh, Seong Wook Ryu, Hyung Mo Yoo

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9 Citations (Scopus)


A selective etching solution of GaAs over Al0.24Ga0.76As, composed of acid-buffer solution (citric acid monohydrate+potassium citrate) and H2O2, has been developed for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT applications. The best selectivity of 776 was achieved using the mixed solution (citric acid-buffer solution:H2O2 = 5:1). The etch rate of GaAs in the solution is as low as 46.6 angstroms/s. Both the low etch rate of GaAs and the high selectivity exhibit the standard deviation of pinch-off voltage of 1.0 μm-gate PHEMTs as low as ±0.029 V across a 3 in wafer. This demonstrates the applicability of this solution to the gate recess process.

Original languageEnglish
Pages (from-to)1974-1975
Number of pages2
JournalElectronics Letters
Issue number23
Publication statusPublished - 2000 Nov 9

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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