Selectively Metallized 2D Materials for Simple Logic Devices

Ajjiporn Dathbun, Youngchan Kim, Yongsuk Choi, Jia Sun, Seongchan Kim, Byunggil Kang, Moon Sung Kang, Do Kyung Hwang, Sungjoo Lee, Changgu Lee, Jeong Ho Cho

Research output: Contribution to journalArticle

Abstract

We herein demonstrate, for the first time, transparent, flexible, and large-area monolithic MoS2 transistors and logic gates. Each single transistor consists of only two components: a monolithic chemical vapor deposition-grown MoS2 and an ion gel. Additional electrode materials are not required. The uniqueness of the device configuration is attributed to two factors. One is that a MoS2 layer is a semiconductor, but it can be doped degenerately; monolithic MoS2 can thus serve as both the electrodes and the channel of a transistor via selective doping of the material at certain positions. The other is the use of an electrolyte gate dielectric that permits effective gating (<3 V) even from an electrode coplanar with the channel. The resulting monolithic MoS2 transistors yield excellent device performance, including a maximum mobility of 1.5 cm2/V s, an on-off ratio of 105, and a turn-on voltage of -0.69 V. This unique transistor architecture was successfully applied to various semiconductors such as ReS2 and indium-gallium-zinc oxide. Furthermore, the presented devices exhibit excellent mechanical, operational, and environmental stabilities. Fabrication of complex logic circuits (NOT, NAND, and NOR gates) by integration of the monolithic MoS2 transistors is demonstrated. Finally, the monolithic MoS2 transistor was connected to drive red, green, and blue light-emitting diode pixels, which yielded high luminance at a low voltage (<3 V). We believe that the unique architecture of the devices provides a facile way for low-cost, flexible, and high-performance two-dimensional electronics.

Original languageEnglish
Pages (from-to)18571-18579
Number of pages9
JournalACS Applied Materials and Interfaces
Volume11
Issue number20
DOIs
Publication statusPublished - 2019 May 22

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Logic devices
Transistors
NAND circuits
Electrodes
Semiconductor materials
Zinc Oxide
Gallium
Indium
Logic gates
Gate dielectrics
Electric potential
Zinc oxide
Electrolytes
Light emitting diodes
Chemical vapor deposition
Luminance
Electronic equipment
Gels
Pixels
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Dathbun, Ajjiporn ; Kim, Youngchan ; Choi, Yongsuk ; Sun, Jia ; Kim, Seongchan ; Kang, Byunggil ; Kang, Moon Sung ; Hwang, Do Kyung ; Lee, Sungjoo ; Lee, Changgu ; Cho, Jeong Ho. / Selectively Metallized 2D Materials for Simple Logic Devices. In: ACS Applied Materials and Interfaces. 2019 ; Vol. 11, No. 20. pp. 18571-18579.
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Dathbun, A, Kim, Y, Choi, Y, Sun, J, Kim, S, Kang, B, Kang, MS, Hwang, DK, Lee, S, Lee, C & Cho, JH 2019, 'Selectively Metallized 2D Materials for Simple Logic Devices', ACS Applied Materials and Interfaces, vol. 11, no. 20, pp. 18571-18579. https://doi.org/10.1021/acsami.9b03078

Selectively Metallized 2D Materials for Simple Logic Devices. / Dathbun, Ajjiporn; Kim, Youngchan; Choi, Yongsuk; Sun, Jia; Kim, Seongchan; Kang, Byunggil; Kang, Moon Sung; Hwang, Do Kyung; Lee, Sungjoo; Lee, Changgu; Cho, Jeong Ho.

In: ACS Applied Materials and Interfaces, Vol. 11, No. 20, 22.05.2019, p. 18571-18579.

Research output: Contribution to journalArticle

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T1 - Selectively Metallized 2D Materials for Simple Logic Devices

AU - Dathbun, Ajjiporn

AU - Kim, Youngchan

AU - Choi, Yongsuk

AU - Sun, Jia

AU - Kim, Seongchan

AU - Kang, Byunggil

AU - Kang, Moon Sung

AU - Hwang, Do Kyung

AU - Lee, Sungjoo

AU - Lee, Changgu

AU - Cho, Jeong Ho

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Y1 - 2019/5/22

N2 - We herein demonstrate, for the first time, transparent, flexible, and large-area monolithic MoS2 transistors and logic gates. Each single transistor consists of only two components: a monolithic chemical vapor deposition-grown MoS2 and an ion gel. Additional electrode materials are not required. The uniqueness of the device configuration is attributed to two factors. One is that a MoS2 layer is a semiconductor, but it can be doped degenerately; monolithic MoS2 can thus serve as both the electrodes and the channel of a transistor via selective doping of the material at certain positions. The other is the use of an electrolyte gate dielectric that permits effective gating (<3 V) even from an electrode coplanar with the channel. The resulting monolithic MoS2 transistors yield excellent device performance, including a maximum mobility of 1.5 cm2/V s, an on-off ratio of 105, and a turn-on voltage of -0.69 V. This unique transistor architecture was successfully applied to various semiconductors such as ReS2 and indium-gallium-zinc oxide. Furthermore, the presented devices exhibit excellent mechanical, operational, and environmental stabilities. Fabrication of complex logic circuits (NOT, NAND, and NOR gates) by integration of the monolithic MoS2 transistors is demonstrated. Finally, the monolithic MoS2 transistor was connected to drive red, green, and blue light-emitting diode pixels, which yielded high luminance at a low voltage (<3 V). We believe that the unique architecture of the devices provides a facile way for low-cost, flexible, and high-performance two-dimensional electronics.

AB - We herein demonstrate, for the first time, transparent, flexible, and large-area monolithic MoS2 transistors and logic gates. Each single transistor consists of only two components: a monolithic chemical vapor deposition-grown MoS2 and an ion gel. Additional electrode materials are not required. The uniqueness of the device configuration is attributed to two factors. One is that a MoS2 layer is a semiconductor, but it can be doped degenerately; monolithic MoS2 can thus serve as both the electrodes and the channel of a transistor via selective doping of the material at certain positions. The other is the use of an electrolyte gate dielectric that permits effective gating (<3 V) even from an electrode coplanar with the channel. The resulting monolithic MoS2 transistors yield excellent device performance, including a maximum mobility of 1.5 cm2/V s, an on-off ratio of 105, and a turn-on voltage of -0.69 V. This unique transistor architecture was successfully applied to various semiconductors such as ReS2 and indium-gallium-zinc oxide. Furthermore, the presented devices exhibit excellent mechanical, operational, and environmental stabilities. Fabrication of complex logic circuits (NOT, NAND, and NOR gates) by integration of the monolithic MoS2 transistors is demonstrated. Finally, the monolithic MoS2 transistor was connected to drive red, green, and blue light-emitting diode pixels, which yielded high luminance at a low voltage (<3 V). We believe that the unique architecture of the devices provides a facile way for low-cost, flexible, and high-performance two-dimensional electronics.

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Dathbun A, Kim Y, Choi Y, Sun J, Kim S, Kang B et al. Selectively Metallized 2D Materials for Simple Logic Devices. ACS Applied Materials and Interfaces. 2019 May 22;11(20):18571-18579. https://doi.org/10.1021/acsami.9b03078