We have improved the performance of pentacene field-effect transistors by using highly conductive poly(3,4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) source-drain electrodes (∼ 103 S/cm) formed by a simple solution-based process. A high field-effect mobility of 0.25 cm2 /Vs and an ON/OFF current ratio of 107 were obtained in pentacene-based bottom contact organic field-effect transistors (OFETs), which constitutes an improvement over OFETs based on Au and PEDOT:PSS electrodes. Two-dimensional grazing incidence x-ray diffraction and ultraviolet photoemission spectroscopy results confirmed that the crystalline properties of the pentacene film and the hole injection from the PEDOT-Tos electrode to the pentacene layer are more efficient than those from Au and PEDOT:PSS electrodes.
Bibliographical noteFunding Information:
The authors thank the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. R15-2008-006-01002-0) and the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy for their financial support and the Pohang Accelerator Laboratory for providing the 4B1 and 5A beamlines used in this study.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)