Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)- tosylate electrodes for high performance organic field-effect transistors

Jung Ah Lim, Song Hee Park, Ji Hye Baek, Young Dong Ko, Hwa Sung Lee, Kilwon Cho, Jun Young Lee, Dong Ryeol Lee, Jeong Ho Cho

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We have improved the performance of pentacene field-effect transistors by using highly conductive poly(3,4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) source-drain electrodes (∼ 103 S/cm) formed by a simple solution-based process. A high field-effect mobility of 0.25 cm2 /Vs and an ON/OFF current ratio of 107 were obtained in pentacene-based bottom contact organic field-effect transistors (OFETs), which constitutes an improvement over OFETs based on Au and PEDOT:PSS electrodes. Two-dimensional grazing incidence x-ray diffraction and ultraviolet photoemission spectroscopy results confirmed that the crystalline properties of the pentacene film and the hole injection from the PEDOT-Tos electrode to the pentacene layer are more efficient than those from Au and PEDOT:PSS electrodes.

Original languageEnglish
Article number233509
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2009 Dec 18


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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