Selenium and silicon delta-doping properties of GaAs by atmospheric pressure metalorganic chemical vapor deposition

Yong Kim, Moo Sung Kim, Suk Ki Min, Choochon Lee, Kyung Hwa Yoo

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We investigate selenium and silicon delta-doping characteristics for GaAs layers grown by atmospheric pressure metalorganic chemical vapor deposition. Broadened capacitance-voltage (C-V) profiles and low doping activities are found in case of Se delta doping. In contrast, excellent delta-doping characteristics result for silicon. The obtained C-V full width at half maximum are in the range of 44-49 Å for samples even with substrate temperatures of 700-750 °C, which are relatively high compared with the molecular-beam epitaxy (MBE) substrate temperature. Hall mobility measurements show the mobility enhancement due to a screening of impurity charges. Also, Shubnikov-de Haas oscillations demonstrate the two-dimensional nature of electrons confined in the delta-doped layers. Therefore, our delta-doped layers show no substantial differences in quality with MBE-grown delta-doped layers. In addition, preliminary delta field-effect transistors having a gate length of 1.5 μm and a gate width of 300 μm are fabricated.

Original languageEnglish
Pages (from-to)2747-2751
Number of pages5
JournalJournal of Applied Physics
Volume68
Issue number6
DOIs
Publication statusPublished - 1990 Dec 1

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this