Self-aligned III-V MOSFETs heterointegrated on a 200 mm Si substrate using an industry standard process flow

R. J.W. Hill, C. Park, J. Barnett, J. Price, J. Huang, N. Goel, W. Y. Loh, J. Oh, C. E. Smith, P. Kirsch, P. Majhi, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

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