Self-aligned top-gate amorphous indium zinc oxide thin-film transistors exceeding low-temperature poly-si transistor performance

Jae Chul Park, Ho Nyeon Lee, Seongil Im

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Thin-film transistor (TFT) is a key component of active-matrix flat-panel displays (AMFPDs). These days, the low-temperature poly silicon (LTPS) TFTs are to match with advanced AMFPDs such as the active matrix organic light-emitting diode (AMOLED) display, because of their high mobility for fast pixel switching. However, the manufacturing process of LTPS TFT is quite complicated, costly, and scale-limited. Amorphous oxide semiconductor (AOS) TFT technology is another candidate, which is as simple as that of conventioanl amorphous (a)-Si TFTs in fabrication but provides much superior device performances to those of a-Si TFTs. Hence, various AOSs have been compared with LTPS for active channel layer of the advanced TFTs, but have always been found to be relatively inferior to LTPS. In the present work, we clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting a self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high-performance simple-processed a-IZO TFT with mobility of ∼157 cm 2 V-1 s-1, SS of ∼190 mV dec-1, and good bias/photostabilities, which overall surpass the performances of high-cost LTPS TFTs.

Original languageEnglish
Pages (from-to)6990-6995
Number of pages6
JournalACS Applied Materials and Interfaces
Volume5
Issue number15
DOIs
Publication statusPublished - 2013 Aug 14

Fingerprint

Zinc Oxide
Indium
Silicon
Thin film transistors
Zinc oxide
Polysilicon
Oxide films
Transistors
Flat panel displays
Temperature
Amorphous semiconductors
Organic light emitting diodes (OLED)
Pixels
Display devices
Fabrication
Costs

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

@article{92c21e0d330f445585ec6b1800b972db,
title = "Self-aligned top-gate amorphous indium zinc oxide thin-film transistors exceeding low-temperature poly-si transistor performance",
abstract = "Thin-film transistor (TFT) is a key component of active-matrix flat-panel displays (AMFPDs). These days, the low-temperature poly silicon (LTPS) TFTs are to match with advanced AMFPDs such as the active matrix organic light-emitting diode (AMOLED) display, because of their high mobility for fast pixel switching. However, the manufacturing process of LTPS TFT is quite complicated, costly, and scale-limited. Amorphous oxide semiconductor (AOS) TFT technology is another candidate, which is as simple as that of conventioanl amorphous (a)-Si TFTs in fabrication but provides much superior device performances to those of a-Si TFTs. Hence, various AOSs have been compared with LTPS for active channel layer of the advanced TFTs, but have always been found to be relatively inferior to LTPS. In the present work, we clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting a self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high-performance simple-processed a-IZO TFT with mobility of ∼157 cm 2 V-1 s-1, SS of ∼190 mV dec-1, and good bias/photostabilities, which overall surpass the performances of high-cost LTPS TFTs.",
author = "Park, {Jae Chul} and Lee, {Ho Nyeon} and Seongil Im",
year = "2013",
month = "8",
day = "14",
doi = "10.1021/am401128p",
language = "English",
volume = "5",
pages = "6990--6995",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "15",

}

Self-aligned top-gate amorphous indium zinc oxide thin-film transistors exceeding low-temperature poly-si transistor performance. / Park, Jae Chul; Lee, Ho Nyeon; Im, Seongil.

In: ACS Applied Materials and Interfaces, Vol. 5, No. 15, 14.08.2013, p. 6990-6995.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Self-aligned top-gate amorphous indium zinc oxide thin-film transistors exceeding low-temperature poly-si transistor performance

AU - Park, Jae Chul

AU - Lee, Ho Nyeon

AU - Im, Seongil

PY - 2013/8/14

Y1 - 2013/8/14

N2 - Thin-film transistor (TFT) is a key component of active-matrix flat-panel displays (AMFPDs). These days, the low-temperature poly silicon (LTPS) TFTs are to match with advanced AMFPDs such as the active matrix organic light-emitting diode (AMOLED) display, because of their high mobility for fast pixel switching. However, the manufacturing process of LTPS TFT is quite complicated, costly, and scale-limited. Amorphous oxide semiconductor (AOS) TFT technology is another candidate, which is as simple as that of conventioanl amorphous (a)-Si TFTs in fabrication but provides much superior device performances to those of a-Si TFTs. Hence, various AOSs have been compared with LTPS for active channel layer of the advanced TFTs, but have always been found to be relatively inferior to LTPS. In the present work, we clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting a self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high-performance simple-processed a-IZO TFT with mobility of ∼157 cm 2 V-1 s-1, SS of ∼190 mV dec-1, and good bias/photostabilities, which overall surpass the performances of high-cost LTPS TFTs.

AB - Thin-film transistor (TFT) is a key component of active-matrix flat-panel displays (AMFPDs). These days, the low-temperature poly silicon (LTPS) TFTs are to match with advanced AMFPDs such as the active matrix organic light-emitting diode (AMOLED) display, because of their high mobility for fast pixel switching. However, the manufacturing process of LTPS TFT is quite complicated, costly, and scale-limited. Amorphous oxide semiconductor (AOS) TFT technology is another candidate, which is as simple as that of conventioanl amorphous (a)-Si TFTs in fabrication but provides much superior device performances to those of a-Si TFTs. Hence, various AOSs have been compared with LTPS for active channel layer of the advanced TFTs, but have always been found to be relatively inferior to LTPS. In the present work, we clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting a self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high-performance simple-processed a-IZO TFT with mobility of ∼157 cm 2 V-1 s-1, SS of ∼190 mV dec-1, and good bias/photostabilities, which overall surpass the performances of high-cost LTPS TFTs.

UR - http://www.scopus.com/inward/record.url?scp=84882762992&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84882762992&partnerID=8YFLogxK

U2 - 10.1021/am401128p

DO - 10.1021/am401128p

M3 - Article

C2 - 23823486

AN - SCOPUS:84882762992

VL - 5

SP - 6990

EP - 6995

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 15

ER -