Self-assembled Bi interconnections produced by on-film formation of nanowires for in situ device fabrication

Jinhee Ham, Joohoon Kang, Jin Seo Noh, Wooyoung Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We fabricated Bi nanowire interconnections between two pre-patterned electrodes using a combination of on-film formation of nanowires (OFF-ON) and self-assembly. Bi nanowires were found to grow laterally from a multilayer structure with a Cr (or SiO2) overlayer on top of a Bi thin film through thermal annealing to relieve vertically stored compressive stress. A Bi nanobridge with a diameter of 192 nm was formed between two Cr electrodes and was highly ohmic according to I-V measurements. A high transverse magnetoresistance of 123% was also observed at 300K. Our results indicate that self-assembled lateral nanowire growth can be utilized as an easy means for fabricating a variety of nanowire devices without the use of catalysts or complex patterning processes.

Original languageEnglish
Article number165302
JournalNanotechnology
Volume21
Issue number16
DOIs
Publication statusPublished - 2010 Apr 12

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Nanowires
Fabrication
Electrodes
Magnetoresistance
Compressive stress
Self assembly
Multilayers
Annealing
Thin films
Catalysts

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

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Self-assembled Bi interconnections produced by on-film formation of nanowires for in situ device fabrication. / Ham, Jinhee; Kang, Joohoon; Noh, Jin Seo; Lee, Wooyoung.

In: Nanotechnology, Vol. 21, No. 16, 165302, 12.04.2010.

Research output: Contribution to journalArticle

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