Abstract
We fabricated Bi nanowire interconnections between two pre-patterned electrodes using a combination of on-film formation of nanowires (OFF-ON) and self-assembly. Bi nanowires were found to grow laterally from a multilayer structure with a Cr (or SiO2) overlayer on top of a Bi thin film through thermal annealing to relieve vertically stored compressive stress. A Bi nanobridge with a diameter of 192 nm was formed between two Cr electrodes and was highly ohmic according to I-V measurements. A high transverse magnetoresistance of 123% was also observed at 300K. Our results indicate that self-assembled lateral nanowire growth can be utilized as an easy means for fabricating a variety of nanowire devices without the use of catalysts or complex patterning processes.
| Original language | English |
|---|---|
| Article number | 165302 |
| Journal | Nanotechnology |
| Volume | 21 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2010 Apr 12 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
Cite this
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Self-assembled Bi interconnections produced by on-film formation of nanowires for in situ device fabrication. / Ham, Jinhee; Kang, Joohoon; Noh, Jin Seo; Lee, Wooyoung.
In: Nanotechnology, Vol. 21, No. 16, 165302, 12.04.2010.Research output: Contribution to journal › Article
TY - JOUR
T1 - Self-assembled Bi interconnections produced by on-film formation of nanowires for in situ device fabrication
AU - Ham, Jinhee
AU - Kang, Joohoon
AU - Noh, Jin Seo
AU - Lee, Wooyoung
PY - 2010/4/12
Y1 - 2010/4/12
N2 - We fabricated Bi nanowire interconnections between two pre-patterned electrodes using a combination of on-film formation of nanowires (OFF-ON) and self-assembly. Bi nanowires were found to grow laterally from a multilayer structure with a Cr (or SiO2) overlayer on top of a Bi thin film through thermal annealing to relieve vertically stored compressive stress. A Bi nanobridge with a diameter of 192 nm was formed between two Cr electrodes and was highly ohmic according to I-V measurements. A high transverse magnetoresistance of 123% was also observed at 300K. Our results indicate that self-assembled lateral nanowire growth can be utilized as an easy means for fabricating a variety of nanowire devices without the use of catalysts or complex patterning processes.
AB - We fabricated Bi nanowire interconnections between two pre-patterned electrodes using a combination of on-film formation of nanowires (OFF-ON) and self-assembly. Bi nanowires were found to grow laterally from a multilayer structure with a Cr (or SiO2) overlayer on top of a Bi thin film through thermal annealing to relieve vertically stored compressive stress. A Bi nanobridge with a diameter of 192 nm was formed between two Cr electrodes and was highly ohmic according to I-V measurements. A high transverse magnetoresistance of 123% was also observed at 300K. Our results indicate that self-assembled lateral nanowire growth can be utilized as an easy means for fabricating a variety of nanowire devices without the use of catalysts or complex patterning processes.
UR - http://www.scopus.com/inward/record.url?scp=77950467092&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77950467092&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/21/16/165302
DO - 10.1088/0957-4484/21/16/165302
M3 - Article
C2 - 20348595
AN - SCOPUS:77950467092
VL - 21
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 16
M1 - 165302
ER -