Self-assembled growth of gaas anti quantum dots in inas matrix by migration enhanced molecular beam epitaxy

E. H. Lee, J. D. Song, S. Y. Kim, I. K. Han, Soo Kyung Chang, J. I. Lee

Research output: Contribution to journalArticle

Abstract

Self-assembled GaAs anti quantum dots (AQDs) were grown in an InAs matrix via migration enhanced molecular beam epitaxy. The transmission electron microscopy image showed that the 2D to 3D transition thickness is below 1.5 monolayers (MLs) of GaAs coverage. The average diameter and height of the GaAs AQDs for 1.5 ML GaAs coverage taken from the atomic force microscopy image were ~29.0 nm and 1.4 nm, respectively. The density was ~6 0×1010 cm-2. The size of the AQDs was enlarged in the InAs matrix compared with that on the surface. These results indicate that the GaAs AQDs in the InAs matrix under tensile strain can be effectively formed with the assistance of the migration enhanced epitaxy method.

Original languageEnglish
Pages (from-to)1480-1482
Number of pages3
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number2
DOIs
Publication statusPublished - 2012 Jun 5

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Quantum Dots
Growth
Atomic Force Microscopy
Transmission Electron Microscopy
indium arsenide
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Medicine(all)

Cite this

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title = "Self-assembled growth of gaas anti quantum dots in inas matrix by migration enhanced molecular beam epitaxy",
abstract = "Self-assembled GaAs anti quantum dots (AQDs) were grown in an InAs matrix via migration enhanced molecular beam epitaxy. The transmission electron microscopy image showed that the 2D to 3D transition thickness is below 1.5 monolayers (MLs) of GaAs coverage. The average diameter and height of the GaAs AQDs for 1.5 ML GaAs coverage taken from the atomic force microscopy image were ~29.0 nm and 1.4 nm, respectively. The density was ~6 0×1010 cm-2. The size of the AQDs was enlarged in the InAs matrix compared with that on the surface. These results indicate that the GaAs AQDs in the InAs matrix under tensile strain can be effectively formed with the assistance of the migration enhanced epitaxy method.",
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Self-assembled growth of gaas anti quantum dots in inas matrix by migration enhanced molecular beam epitaxy. / Lee, E. H.; Song, J. D.; Kim, S. Y.; Han, I. K.; Chang, Soo Kyung; Lee, J. I.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 2, 05.06.2012, p. 1480-1482.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Self-assembled growth of gaas anti quantum dots in inas matrix by migration enhanced molecular beam epitaxy

AU - Lee, E. H.

AU - Song, J. D.

AU - Kim, S. Y.

AU - Han, I. K.

AU - Chang, Soo Kyung

AU - Lee, J. I.

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AB - Self-assembled GaAs anti quantum dots (AQDs) were grown in an InAs matrix via migration enhanced molecular beam epitaxy. The transmission electron microscopy image showed that the 2D to 3D transition thickness is below 1.5 monolayers (MLs) of GaAs coverage. The average diameter and height of the GaAs AQDs for 1.5 ML GaAs coverage taken from the atomic force microscopy image were ~29.0 nm and 1.4 nm, respectively. The density was ~6 0×1010 cm-2. The size of the AQDs was enlarged in the InAs matrix compared with that on the surface. These results indicate that the GaAs AQDs in the InAs matrix under tensile strain can be effectively formed with the assistance of the migration enhanced epitaxy method.

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