Self-assembled monolayer modified back interface of oxide semiconductor as a protection layer

Seung Hwan Cho, Jeong Soo Lee, Seung Min Song, Tae Young Choi, Jung Hun Noh, Jang Yeon Kwon, Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We successfully deposited SAM (Self-assembled Monolayer) as a protection layer of the back interface of an oxide semiconductor to reduce plasma and wet etchant damages during the source / drain patterning process. In addition, SAM inhibited the oxidization of Ti and the oxygen extraction from the IGZO layer.

Original languageEnglish
Title of host publicationSociety for Information Display - 18th International Display Workshops 2011, IDW'11
Pages595-598
Number of pages4
Publication statusPublished - 2011 Dec 1
Event18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan
Duration: 2011 Dec 72011 Dec 9

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other18th International Display Workshops 2011, IDW 2011
CountryJapan
CityNagoya
Period11/12/711/12/9

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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  • Cite this

    Cho, S. H., Lee, J. S., Song, S. M., Choi, T. Y., Noh, J. H., Kwon, J. Y., & Han, M. K. (2011). Self-assembled monolayer modified back interface of oxide semiconductor as a protection layer. In Society for Information Display - 18th International Display Workshops 2011, IDW'11 (pp. 595-598). (Proceedings of the International Display Workshops; Vol. 1).