Self-assembled organic channel/polymer dielectric layer for organic thin-film transistor applications

Ji Hoon Park; Kwang H. Lee; Sung Jin Mun; Gunwoo Ko; S. Heo; Jae Hoon Kim; Eugene Kim; Seongil Im

doi:10.1063/1.3666641

Self-assembled organic channel/polymer dielectric layer for organic thin-film transistor applications

Ji Hoon Park, Kwang H. Lee, Sung Jin Mun, Gunwoo Ko, S. Heo, Jae Hoon Kim, Eugene Kim, Seongil Im

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the solution-processed thin-film transistors (TFTs) fabricated by the vertical flowing of the viscous 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and isotatic (i-) poly-(methyl methacrylate) (PMMA) blend. This vertical flowing method provide us with phase-separated film (TIPS pentcene (up)/ i-PMMA(down) after drying. As fabricated on a highly capacitive 20 nm-thick Al ₂O ₃ dielectric, our device displayed a high mobility of 0.20cm ²/Vs, a low operation voltage of -10 V, and little hysteresis.

Original language	English
Title of host publication	Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages	847-848
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666641
Publication status	Published - 2011
Event	30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: 2010 Jul 25 → 2010 Jul 30

Publication series

Name	AIP Conference Proceedings
Volume	1399
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	30th International Conference on the Physics of Semiconductors, ICPS-30
Country/Territory	Korea, Republic of
City	Seoul
Period	10/7/25 → 10/7/30

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.3666641

Cite this

Park, J. H., Lee, K. H., Mun, S. J., Ko, G., Heo, S., Kim, J. H., Kim, E., & Im, S. (2011). Self-assembled organic channel/polymer dielectric layer for organic thin-film transistor applications. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 847-848). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666641

@inproceedings{a0c42ac1784244d2a46a850a1b6d81e0,

title = "Self-assembled organic channel/polymer dielectric layer for organic thin-film transistor applications",

abstract = "We report on the solution-processed thin-film transistors (TFTs) fabricated by the vertical flowing of the viscous 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and isotatic (i-) poly-(methyl methacrylate) (PMMA) blend. This vertical flowing method provide us with phase-separated film (TIPS pentcene (up)/ i-PMMA(down) after drying. As fabricated on a highly capacitive 20 nm-thick Al 2O 3 dielectric, our device displayed a high mobility of 0.20cm 2/Vs, a low operation voltage of -10 V, and little hysteresis.",

author = "Park, {Ji Hoon} and Lee, {Kwang H.} and Mun, {Sung Jin} and Gunwoo Ko and S. Heo and Kim, {Jae Hoon} and Eugene Kim and Seongil Im",

year = "2011",

doi = "10.1063/1.3666641",

language = "English",

isbn = "9780735410022",

series = "AIP Conference Proceedings",

pages = "847--848",

booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",

}

Park, JH, Lee, KH, Mun, SJ, Ko, G, Heo, S, Kim, JH, Kim, E & Im, S 2011, Self-assembled organic channel/polymer dielectric layer for organic thin-film transistor applications. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 847-848, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 10/7/25. https://doi.org/10.1063/1.3666641

Self-assembled organic channel/polymer dielectric layer for organic thin-film transistor applications. / Park, Ji Hoon; Lee, Kwang H.; Mun, Sung Jin et al.

Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 847-848 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Park, Ji Hoon

AU - Lee, Kwang H.

AU - Mun, Sung Jin

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AU - Heo, S.

AU - Kim, Jae Hoon

AU - Kim, Eugene

AU - Im, Seongil

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AB - We report on the solution-processed thin-film transistors (TFTs) fabricated by the vertical flowing of the viscous 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and isotatic (i-) poly-(methyl methacrylate) (PMMA) blend. This vertical flowing method provide us with phase-separated film (TIPS pentcene (up)/ i-PMMA(down) after drying. As fabricated on a highly capacitive 20 nm-thick Al 2O 3 dielectric, our device displayed a high mobility of 0.20cm 2/Vs, a low operation voltage of -10 V, and little hysteresis.

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Self-assembled organic channel/polymer dielectric layer for organic thin-film transistor applications

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