Abstract
We report on the solution-processed thin-film transistors (TFTs) fabricated by the vertical flowing of the viscous 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and isotatic (i-) poly-(methyl methacrylate) (PMMA) blend. This vertical flowing method provide us with phase-separated film (TIPS pentcene (up)/ i-PMMA(down) after drying. As fabricated on a highly capacitive 20 nm-thick Al 2O 3 dielectric, our device displayed a high mobility of 0.20cm 2/Vs, a low operation voltage of -10 V, and little hysteresis.
Original language | English |
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Title of host publication | Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 |
Pages | 847-848 |
Number of pages | 2 |
DOIs | |
Publication status | Published - 2011 |
Event | 30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: 2010 Jul 25 → 2010 Jul 30 |
Publication series
Name | AIP Conference Proceedings |
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Volume | 1399 |
ISSN (Print) | 0094-243X |
ISSN (Electronic) | 1551-7616 |
Other
Other | 30th International Conference on the Physics of Semiconductors, ICPS-30 |
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Country | Korea, Republic of |
City | Seoul |
Period | 10/7/25 → 10/7/30 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)