Self-assembled process for the preparation of ultra-thin zeolite films

Gyoujin Cho, IL Shik Moon, Yong-Gun Shul, Kyung Taek Jung, Jae Suk Lee, Bing M. Fung

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A simple and effective process of preparing ultra-thin zeolite films on a silicon substrate is described. The starting material was a stable colloidal dispersion of TS-1 zeolite particles with a size of 50-100 nm. The silicon wafer is placed in a 20 mM solution of hexanoic acid in water at pH = 3. When the colloidal dispersion is added, the adsorption of the hexanoic acid molecules onto the zeolite particles causes them to deposit on the silicon wafer to form a thin layer with a thickness of about 103 nm.

Original languageEnglish
Pages (from-to)355-356
Number of pages2
JournalChemistry Letters
Issue number4
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Zeolites
Ultrathin films
Silicon wafers
Silicon
Deposits
Adsorption
Molecules
Water
Substrates
hexanoic acid

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

Cite this

Cho, Gyoujin ; Moon, IL Shik ; Shul, Yong-Gun ; Jung, Kyung Taek ; Lee, Jae Suk ; Fung, Bing M. / Self-assembled process for the preparation of ultra-thin zeolite films. In: Chemistry Letters. 1998 ; No. 4. pp. 355-356.
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Self-assembled process for the preparation of ultra-thin zeolite films. / Cho, Gyoujin; Moon, IL Shik; Shul, Yong-Gun; Jung, Kyung Taek; Lee, Jae Suk; Fung, Bing M.

In: Chemistry Letters, No. 4, 01.01.1998, p. 355-356.

Research output: Contribution to journalArticle

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AU - Fung, Bing M.

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