We report on the solution-processed thin-film transistors (TFTs) fabricated by the vertical flowing of the viscous 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and isotatic (i-) poly-(methyl methacrylate) (PMMA) blend. According to the optical-absorption and X-ray diffraction spectra, the solution-processed film appeared self-assembled with TIPS-pentacene (up) and i-PMMA dielectric (down) layers on substrates. As fabricated on a highly capacitive 100 nm-thick AlOx dielectric, our device displayed a high mobility of 0.34 cm2/V s, a low operation voltage of -15 V, and little hysteresis.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from KOSEF (NRL program, No. 2009-8-0403 ), the 21st Century Frontier R&D Program funded by the MKE (Information Display R&D center, F0004022-2009 ), and Brain Korea 21 Project. J.H. Park acknowledges the Seoul Science Fellowship.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry