Si nanoparticles were successfully entrapped between graphene nanosheets by simple self-assembly of chemically modified graphene (RGO) without using any chemical/physical linkers. The resulting Si/RGO architecture possessed a more efficient conducting/buffering framework for Si nanoparticles when compared to the framework of the mechanically mixed Si/RGO product. The Si/RGO architecture exhibited an improved cyclability (1481 mAh/g after 50 cycles) and showed favorable high-rate capability.
Bibliographical noteFunding Information:
This work was supported by the energy efficiency and resources of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Ministry of Knowledge Economy, Korean government (No: 20122010100140 ).
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