Dielectric layer containing CoSi2 nanocrystals was directly fabricated by plasma-enhanced atomic layer deposition using CoCp2 and NH3 plasma mixed with SiH4 without annealing process. Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy results confirmed the formation of CoSi2 nanocrystal. The gate stack composed of dielectric layer containing CoSi2 nanocrystals with ALD HfO2 capping layer together with Ru metal gate was analyzed by capacitancevoltage (CV) measurement. Large hysteresis of CV curves indicated charge trap effects of CoSi2 nanocrystals. The current process provides simple route for the fabrication of nanocrystal memory compatible with the current Si device unit processes.
Bibliographical noteFunding Information:
This work was supported by the Technology Innovation Program (Industrial Strategic technology development program, 10035430, Development of reliable fine-pitch metallization technologies) funded by the Ministry of Knowledge Economy (MKE, Korea).
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry