Self growth of silica nanowires on a Si/SiO2 substrate

Hannah Jeong, Han Kyu Seong, Heon Jin Choi

Research output: Contribution to journalArticle

Abstract

The growth of amorphous silica nanowires by on-site feeding of silicon and oxygen is reported. The nanowires were grown on a nickel-coated oxidized silicon substrate without external silicon or oxygen sources. Transmission electron microscopy observation revealed that the nanowires, which have diameters of less than 50 nm and a length of several micrometers, were grown using a traditional vapor-liquid-solid mechanism. Blue photoluminescence was observed from these nanowires at room temperature. An approach to grow nanowires without external precursors may be useful when integrating nanowires into devices structures. This can benefit the fabrication of nanowire-based nanodevices.

Original languageEnglish
Pages (from-to)142-145
Number of pages4
JournalJournal of the Korean Ceramic Society
Volume45
Issue number3
DOIs
Publication statusPublished - 2008 Jan 1

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Silicon Dioxide
Nanowires
Silica
Substrates
Silicon
Oxygen
Nickel
Photoluminescence
Vapors
Transmission electron microscopy
Fabrication
Liquids

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

Jeong, Hannah ; Seong, Han Kyu ; Choi, Heon Jin. / Self growth of silica nanowires on a Si/SiO2 substrate. In: Journal of the Korean Ceramic Society. 2008 ; Vol. 45, No. 3. pp. 142-145.
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Self growth of silica nanowires on a Si/SiO2 substrate. / Jeong, Hannah; Seong, Han Kyu; Choi, Heon Jin.

In: Journal of the Korean Ceramic Society, Vol. 45, No. 3, 01.01.2008, p. 142-145.

Research output: Contribution to journalArticle

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