Self-limiting film growth of transparent conducting In2O 3 by atomic layer deposition using trimethylindium and water vapor

Do Joong Lee, Jang Yeon Kwon, Jae Il Lee, Ki Bum Kim

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

Conformal and self-limiting film growth of transparent conducting In 2O3 is demonstrated with atomic layer deposition (ALD) using trimethylindium (TMIn) and water vapor. Various parameters, including pulsing times of TMIn and H2O and deposition temperature, are varied to confirm the ALD processing window of In2O3. It is found that an extremely large Langmuir exposure of H2O (∼2 Torr s) is required to fully react the surface-adsorbed In-(CH3)* groups with H2O. Self-limiting film growth is obtainable at the deposition temperatures between 200 and 251 °C where the film growth is controlled by surface adsorption of TMIn molecules. Within the ALD window, ALD-In 2O3 exhibits a film growth rate of ∼0.039 nm/cycle at 217 °C. In addition, the film exhibits an excellent step coverage of ∼97% on a high-aspect-ratio (∼11) nanostructure. The resistivity of the ALD-In2O3 film deposited at 200 °C is about 2.8 × 10-3 Ω cm, and this is attributed to the high Hall mobility of 84 cm2/(V s). Finally, the reduction of the Hall mobility of the films with respect to increases in the deposition temperature is correlated to the evolution of microstructures.

Original languageEnglish
Pages (from-to)15384-15389
Number of pages6
JournalJournal of Physical Chemistry C
Volume115
Issue number31
DOIs
Publication statusPublished - 2011 Aug 11

Fingerprint

Atomic layer deposition
Steam
Film growth
atomic layer epitaxy
Water vapor
water vapor
vapors
conduction
Hall mobility
Temperature
Aspect ratio
Nanostructures
high aspect ratio
Adsorption
temperature
Microstructure
Molecules
Processing
microstructure
cycles

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

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title = "Self-limiting film growth of transparent conducting In2O 3 by atomic layer deposition using trimethylindium and water vapor",
abstract = "Conformal and self-limiting film growth of transparent conducting In 2O3 is demonstrated with atomic layer deposition (ALD) using trimethylindium (TMIn) and water vapor. Various parameters, including pulsing times of TMIn and H2O and deposition temperature, are varied to confirm the ALD processing window of In2O3. It is found that an extremely large Langmuir exposure of H2O (∼2 Torr s) is required to fully react the surface-adsorbed In-(CH3)* groups with H2O. Self-limiting film growth is obtainable at the deposition temperatures between 200 and 251 °C where the film growth is controlled by surface adsorption of TMIn molecules. Within the ALD window, ALD-In 2O3 exhibits a film growth rate of ∼0.039 nm/cycle at 217 °C. In addition, the film exhibits an excellent step coverage of ∼97{\%} on a high-aspect-ratio (∼11) nanostructure. The resistivity of the ALD-In2O3 film deposited at 200 °C is about 2.8 × 10-3 Ω cm, and this is attributed to the high Hall mobility of 84 cm2/(V s). Finally, the reduction of the Hall mobility of the films with respect to increases in the deposition temperature is correlated to the evolution of microstructures.",
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Self-limiting film growth of transparent conducting In2O 3 by atomic layer deposition using trimethylindium and water vapor. / Lee, Do Joong; Kwon, Jang Yeon; Lee, Jae Il; Kim, Ki Bum.

In: Journal of Physical Chemistry C, Vol. 115, No. 31, 11.08.2011, p. 15384-15389.

Research output: Contribution to journalArticle

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AB - Conformal and self-limiting film growth of transparent conducting In 2O3 is demonstrated with atomic layer deposition (ALD) using trimethylindium (TMIn) and water vapor. Various parameters, including pulsing times of TMIn and H2O and deposition temperature, are varied to confirm the ALD processing window of In2O3. It is found that an extremely large Langmuir exposure of H2O (∼2 Torr s) is required to fully react the surface-adsorbed In-(CH3)* groups with H2O. Self-limiting film growth is obtainable at the deposition temperatures between 200 and 251 °C where the film growth is controlled by surface adsorption of TMIn molecules. Within the ALD window, ALD-In 2O3 exhibits a film growth rate of ∼0.039 nm/cycle at 217 °C. In addition, the film exhibits an excellent step coverage of ∼97% on a high-aspect-ratio (∼11) nanostructure. The resistivity of the ALD-In2O3 film deposited at 200 °C is about 2.8 × 10-3 Ω cm, and this is attributed to the high Hall mobility of 84 cm2/(V s). Finally, the reduction of the Hall mobility of the films with respect to increases in the deposition temperature is correlated to the evolution of microstructures.

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