Self-organized GaN quantum wire UV lasers

Heon Jin Choi, Justin C. Johnson, Rongrui He, Sang Kwon Lee, Franklin Kim, Peter Pauzauskie, Joshua Goldberger, Richard J. Saykally, Peidong Yang

Research output: Contribution to journalLetter

274 Citations (Scopus)

Abstract

Quantum wire lasers are generally fabricated through complex overgrowth processes with molecular beam epitaxy. The material systems of such overgrown quantum wires have been limited to Al-Ga-As-P, which leads to emission largely in the visible region. We describe a simple, one-step chemical vapor deposition process for making quantum wire lasers based on the Al-Ga-N system. A novel quantum-wire-in-optical-fiber (Qwof) nanostructure was obtained as a result of spontaneous Al-Ga-N phase separation at the nanometer scale in one dimension. The simultaneous excitonic and photonic confinement within these coaxial Qwof nanostructures leads to the first GaN-based quantum wire UV lasers with a relatively low threshold.

Original languageEnglish
Pages (from-to)8721-8725
Number of pages5
JournalJournal of Physical Chemistry B
Volume107
Issue number34
DOIs
Publication statusPublished - 2003 Aug 28

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Choi, H. J., Johnson, J. C., He, R., Lee, S. K., Kim, F., Pauzauskie, P., Goldberger, J., Saykally, R. J., & Yang, P. (2003). Self-organized GaN quantum wire UV lasers. Journal of Physical Chemistry B, 107(34), 8721-8725. https://doi.org/10.1021/jp034734k