Self-organized GaN quantum wire UV lasers

Heon Jin Choi, Justin C. Johnson, Rongrui He, Sang Kwon Lee, Franklin Kim, Peter Pauzauskie, Joshua Goldberger, Richard J. Saykally, Peidong Yang

Research output: Contribution to journalLetter

283 Citations (Scopus)

Abstract

Quantum wire lasers are generally fabricated through complex overgrowth processes with molecular beam epitaxy. The material systems of such overgrown quantum wires have been limited to Al-Ga-As-P, which leads to emission largely in the visible region. We describe a simple, one-step chemical vapor deposition process for making quantum wire lasers based on the Al-Ga-N system. A novel quantum-wire-in-optical-fiber (Qwof) nanostructure was obtained as a result of spontaneous Al-Ga-N phase separation at the nanometer scale in one dimension. The simultaneous excitonic and photonic confinement within these coaxial Qwof nanostructures leads to the first GaN-based quantum wire UV lasers with a relatively low threshold.

Original languageEnglish
Pages (from-to)8721-8725
Number of pages5
JournalJournal of Physical Chemistry B
Volume107
Issue number34
Publication statusPublished - 2003 Aug 28

Fingerprint

Semiconductor quantum wires
quantum wires
ultraviolet lasers
Lasers
Optical fibers
Nanostructures
optical fibers
Molecular beam epitaxy
Phase separation
Photonics
lasers
Chemical vapor deposition
molecular beam epitaxy
vapor deposition
photonics
thresholds

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Choi, H. J., Johnson, J. C., He, R., Lee, S. K., Kim, F., Pauzauskie, P., ... Yang, P. (2003). Self-organized GaN quantum wire UV lasers. Journal of Physical Chemistry B, 107(34), 8721-8725.
Choi, Heon Jin ; Johnson, Justin C. ; He, Rongrui ; Lee, Sang Kwon ; Kim, Franklin ; Pauzauskie, Peter ; Goldberger, Joshua ; Saykally, Richard J. ; Yang, Peidong. / Self-organized GaN quantum wire UV lasers. In: Journal of Physical Chemistry B. 2003 ; Vol. 107, No. 34. pp. 8721-8725.
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abstract = "Quantum wire lasers are generally fabricated through complex overgrowth processes with molecular beam epitaxy. The material systems of such overgrown quantum wires have been limited to Al-Ga-As-P, which leads to emission largely in the visible region. We describe a simple, one-step chemical vapor deposition process for making quantum wire lasers based on the Al-Ga-N system. A novel quantum-wire-in-optical-fiber (Qwof) nanostructure was obtained as a result of spontaneous Al-Ga-N phase separation at the nanometer scale in one dimension. The simultaneous excitonic and photonic confinement within these coaxial Qwof nanostructures leads to the first GaN-based quantum wire UV lasers with a relatively low threshold.",
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Choi, HJ, Johnson, JC, He, R, Lee, SK, Kim, F, Pauzauskie, P, Goldberger, J, Saykally, RJ & Yang, P 2003, 'Self-organized GaN quantum wire UV lasers', Journal of Physical Chemistry B, vol. 107, no. 34, pp. 8721-8725.

Self-organized GaN quantum wire UV lasers. / Choi, Heon Jin; Johnson, Justin C.; He, Rongrui; Lee, Sang Kwon; Kim, Franklin; Pauzauskie, Peter; Goldberger, Joshua; Saykally, Richard J.; Yang, Peidong.

In: Journal of Physical Chemistry B, Vol. 107, No. 34, 28.08.2003, p. 8721-8725.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Self-organized GaN quantum wire UV lasers

AU - Choi, Heon Jin

AU - Johnson, Justin C.

AU - He, Rongrui

AU - Lee, Sang Kwon

AU - Kim, Franklin

AU - Pauzauskie, Peter

AU - Goldberger, Joshua

AU - Saykally, Richard J.

AU - Yang, Peidong

PY - 2003/8/28

Y1 - 2003/8/28

N2 - Quantum wire lasers are generally fabricated through complex overgrowth processes with molecular beam epitaxy. The material systems of such overgrown quantum wires have been limited to Al-Ga-As-P, which leads to emission largely in the visible region. We describe a simple, one-step chemical vapor deposition process for making quantum wire lasers based on the Al-Ga-N system. A novel quantum-wire-in-optical-fiber (Qwof) nanostructure was obtained as a result of spontaneous Al-Ga-N phase separation at the nanometer scale in one dimension. The simultaneous excitonic and photonic confinement within these coaxial Qwof nanostructures leads to the first GaN-based quantum wire UV lasers with a relatively low threshold.

AB - Quantum wire lasers are generally fabricated through complex overgrowth processes with molecular beam epitaxy. The material systems of such overgrown quantum wires have been limited to Al-Ga-As-P, which leads to emission largely in the visible region. We describe a simple, one-step chemical vapor deposition process for making quantum wire lasers based on the Al-Ga-N system. A novel quantum-wire-in-optical-fiber (Qwof) nanostructure was obtained as a result of spontaneous Al-Ga-N phase separation at the nanometer scale in one dimension. The simultaneous excitonic and photonic confinement within these coaxial Qwof nanostructures leads to the first GaN-based quantum wire UV lasers with a relatively low threshold.

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M3 - Letter

AN - SCOPUS:0041695575

VL - 107

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JO - Journal of Physical Chemistry B

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Choi HJ, Johnson JC, He R, Lee SK, Kim F, Pauzauskie P et al. Self-organized GaN quantum wire UV lasers. Journal of Physical Chemistry B. 2003 Aug 28;107(34):8721-8725.