Self-pattern process of InZnO thin-film transistors using photosensitive precursors

Hee Jun Kim, Yeong Gyu Kim, Sung Pyo Park, Dongwoo Kim, Na Eun Kim, Jong Sun Choi, Hyun Jae Kim

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

We demonstrated self-patternable InZnO (IZO) thin-film transistors (TFTS) using photosensitive precursors. UV-irradiated films became cross-linked and solution-processed IZO films were patterned successfully. Compared to self-patterned IZO TFTs using photosensitive activators, precursor-based self-patterned IZO TFTs have better electrical characteristics and stability due to having less organic residues.

Original languageEnglish
Pages (from-to)180-182
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume48
Issue number1
DOIs
Publication statusPublished - 2017 Jan 1
EventSID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States
Duration: 2017 May 212017 May 26

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Thin film transistors

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, Hee Jun ; Kim, Yeong Gyu ; Park, Sung Pyo ; Kim, Dongwoo ; Kim, Na Eun ; Choi, Jong Sun ; Kim, Hyun Jae. / Self-pattern process of InZnO thin-film transistors using photosensitive precursors. In: Digest of Technical Papers - SID International Symposium. 2017 ; Vol. 48, No. 1. pp. 180-182.
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Self-pattern process of InZnO thin-film transistors using photosensitive precursors. / Kim, Hee Jun; Kim, Yeong Gyu; Park, Sung Pyo; Kim, Dongwoo; Kim, Na Eun; Choi, Jong Sun; Kim, Hyun Jae.

In: Digest of Technical Papers - SID International Symposium, Vol. 48, No. 1, 01.01.2017, p. 180-182.

Research output: Contribution to journalConference article

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AU - Choi, Jong Sun

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