We demonstrated self-patternable InZnO (IZO) thin-film transistors (TFTS) using photosensitive precursors. UV-irradiated films became cross-linked and solution-processed IZO films were patterned successfully. Compared to self-patterned IZO TFTs using photosensitive activators, precursor-based self-patterned IZO TFTs have better electrical characteristics and stability due to having less organic residues.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2017|
|Event||SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States|
Duration: 2017 May 21 → 2017 May 26
Bibliographical noteFunding Information:
This work was supported by the Industrial Strategic Technology Development Program (10063038, Development of sub-micro in-situ light patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).
All Science Journal Classification (ASJC) codes