Self-Selective Organic Memristor by Engineered Conductive Nanofilament Diffusion for Realization of Practical Neuromorphic System

Hea Lim Park, Min Hwi Kim, Hyungjin Kim, Sin Hyung Lee

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Solution-processed organic memristors are promising ingredients to realize smart wearable electronics including neural networks. In organic memristors, tunable functionality of materials allows for realizing bio-realistic neuromorphic electronics in the view point of the mechanical and electrical characteristics. However, it is challenging to achieve high-density crossbar arrays of organic memristors due to undesirable sneak currents arising from unselected cells. For inorganic systems, considerable effort has been made to fabricate practical arrays by employing external components to suppress sneak current. By contrast, in organic memristors, it is barely possible to achieve practical systems due to the solvent orthogonality limiting the integration of the devices. Herein, an unprecedented structure of organic memristors with high self-selectivity is developed to realize practical crossbar arrays. In the developed memristor, the self-selective characteristics are achieved by systematically engineering the conductive nanofilament diffusion in the polymer. The maximum size of the memristor arrays is found to be more than 1 Mbits, and the neural networks based on the developed device showed reliable recognition performance similar to ideal software systems. This novel concept of developing the organic memristor with high self-selectivity will open a new platform for realizing next-generation flexible memory and practical neuromorphic systems linked to artificial intelligence.

Original languageEnglish
Article number2100299
JournalAdvanced Electronic Materials
Volume7
Issue number8
DOIs
Publication statusPublished - 2021 Aug

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) under grant funded by the Korea Government (MSIT) (2020R1F1A1075436 and 2021M3F3A2A03017764). This research was supported by Samsung Electronics Co. and the BK21 FOUR project funded by the Ministry of Education, Korea (4199990113966). This work was also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (Ministry of Science and ICT) (No. 2021R1C1C2012074).

Publisher Copyright:
© 2021 Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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