Transparent conductive oxides have an important role of thin-film solar cell to the side of cost and performance. Especially, an Al doped ZnO film is a very promising material for thin-film solar cell fabrication because of the easy synthesis method as well as the cheap cost induced on the wide availability of its constituent raw materials. The Al-doped ZnO films were prepared by metal organic chemical vapor deposition using a diethylzinc, water vapor and trimethylaluminum (TMA). The introduction of TMA doping source has a great influence on the electrical resistivity and diffused light to wide wavelength range. The haze factor of Al doped ZnO achieved 43 % at 600 nm without additional surface texturing process by simple TMA doping. In this study, the choice of AZO TCO allows the achievement of energy conversion efficiencies to 7.7%.