We demonstrate the fabrication of semi-transparent pentacene-based thin-film transistors (TFTs) with thin poly-4-vinylphenol (PVP)/high-k yttrium oxide (YOx) double gate dielectric layers and also with thermally-evaporated NiOx source/drain (S/D) electrodes which show a transmittance of ∼ 30-40% and sheet resistance range of 100-200 Ω/□ (controlled by deposition rate). Our pentacene TFTs with PVP (45 nm)/YOx (100 nm) layers operated at less than - 5 V, exhibiting a decent saturation mobility (maximum 0.83 cm2/Vs) and on/off current ratios of 104. When the sheet resistance of our semi-transparent NiOx electrode increased from 100 Ω/□ to 200 Ω/□, the field mobility of our TFT decreased but was found to be still effective as 0.32 cm2/Vs.
Bibliographical noteFunding Information:
The authors are very appreciative of the financial support from KOSEF (Program No. M1-0214-00-0228), LG. Philips LCD (project year 2005), and they also acknowledge the support from Brain Korea 21 Project.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry