Semi-transparent pentacene thin film transistors with NiOx electrode operating at low voltages

D. K. Hwang, Jeong M. Choi, Kimoon Lee, Ji Hoon Park, Eugene Kim, Seongil Im

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrate the fabrication of semi-transparent pentacene-based thin-film transistors (TFTs) with thin poly-4-vinylphenol (PVP)/high-k yttrium oxide (YOx) double gate dielectric layers and also with thermally-evaporated NiOx source/drain (S/D) electrodes which show a transmittance of ∼ 30-40% and sheet resistance range of 100-200 Ω/□ (controlled by deposition rate). Our pentacene TFTs with PVP (45 nm)/YOx (100 nm) layers operated at less than - 5 V, exhibiting a decent saturation mobility (maximum 0.83 cm2/Vs) and on/off current ratios of 104. When the sheet resistance of our semi-transparent NiOx electrode increased from 100 Ω/□ to 200 Ω/□, the field mobility of our TFT decreased but was found to be still effective as 0.32 cm2/Vs.

Original languageEnglish
Pages (from-to)1541-1543
Number of pages3
JournalThin Solid Films
Volume516
Issue number7
DOIs
Publication statusPublished - 2008 Feb 15

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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