Semi-transparent pentacene thin film transistors with NiOx electrode operating at low voltages

D. K. Hwang, Jeong M. Choi, Kimoon Lee, Ji Hoon Park, Eugene Kim, Seongil Im

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrate the fabrication of semi-transparent pentacene-based thin-film transistors (TFTs) with thin poly-4-vinylphenol (PVP)/high-k yttrium oxide (YOx) double gate dielectric layers and also with thermally-evaporated NiOx source/drain (S/D) electrodes which show a transmittance of ∼ 30-40% and sheet resistance range of 100-200 Ω/□ (controlled by deposition rate). Our pentacene TFTs with PVP (45 nm)/YOx (100 nm) layers operated at less than - 5 V, exhibiting a decent saturation mobility (maximum 0.83 cm2/Vs) and on/off current ratios of 104. When the sheet resistance of our semi-transparent NiOx electrode increased from 100 Ω/□ to 200 Ω/□, the field mobility of our TFT decreased but was found to be still effective as 0.32 cm2/Vs.

Original languageEnglish
Pages (from-to)1541-1543
Number of pages3
JournalThin Solid Films
Volume516
Issue number7
DOIs
Publication statusPublished - 2008 Feb 15

Fingerprint

Thin film transistors
low voltage
yttrium oxides
transistors
Yttrium oxide
Sheet resistance
Electrodes
electrodes
Electric potential
thin films
Gate dielectrics
Deposition rates
transmittance
saturation
Fabrication
fabrication
pentacene
yttria
poly(4-vinylphenol)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Hwang, D. K. ; Choi, Jeong M. ; Lee, Kimoon ; Park, Ji Hoon ; Kim, Eugene ; Im, Seongil. / Semi-transparent pentacene thin film transistors with NiOx electrode operating at low voltages. In: Thin Solid Films. 2008 ; Vol. 516, No. 7. pp. 1541-1543.
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Semi-transparent pentacene thin film transistors with NiOx electrode operating at low voltages. / Hwang, D. K.; Choi, Jeong M.; Lee, Kimoon; Park, Ji Hoon; Kim, Eugene; Im, Seongil.

In: Thin Solid Films, Vol. 516, No. 7, 15.02.2008, p. 1541-1543.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Hwang, D. K.

AU - Choi, Jeong M.

AU - Lee, Kimoon

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AU - Kim, Eugene

AU - Im, Seongil

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AB - We demonstrate the fabrication of semi-transparent pentacene-based thin-film transistors (TFTs) with thin poly-4-vinylphenol (PVP)/high-k yttrium oxide (YOx) double gate dielectric layers and also with thermally-evaporated NiOx source/drain (S/D) electrodes which show a transmittance of ∼ 30-40% and sheet resistance range of 100-200 Ω/□ (controlled by deposition rate). Our pentacene TFTs with PVP (45 nm)/YOx (100 nm) layers operated at less than - 5 V, exhibiting a decent saturation mobility (maximum 0.83 cm2/Vs) and on/off current ratios of 104. When the sheet resistance of our semi-transparent NiOx electrode increased from 100 Ω/□ to 200 Ω/□, the field mobility of our TFT decreased but was found to be still effective as 0.32 cm2/Vs.

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