Abstract
We report on the fabrication of ZnO-based ultraviolet (UV)-detecting thin-film transistors (TFTs) with a semitransparent conducting NiOx top-gate electrode window and 450 nm-thick poly-4-vinylphenol (PVP) gate dielectric layer that has been formed on n-ZnO by spin-casting. The field effect electron mobility of our device was only about 0.0032 cm2/Vs at the saturation regime of gate bias showing a low saturation current level in the dark because the PVP dielectric has a relatively low dielectric capacitance (7.4 nF/cm2). The on/off current ratio of the device was about 103. However, the current increased up by more than 30 times with UV illumination of 325 nm wavelength (power density ∼50 μW/cm2) while the initial current level was not varied with visible green illumination. We conclude that our ZnO-TFT with organic gate dielectric can be a promising transparent UV-detecting device. copyright The Electrochemical Society.
| Original language | English |
|---|---|
| Pages (from-to) | 29-39 |
| Number of pages | 11 |
| Journal | ECS Transactions |
| Volume | 1 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
| Event | Student Posters (General) - 208th Electrochemical Society Meeting - Los Angeles, CA, United States Duration: 2005 Oct 16 → 2005 Oct 21 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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Semi-transparent UV-detecting ZnO-TFTs with polymer gate dielectric. / Lee, Kimoon; Bae, H. S.; Choi, Jeong M.; Hwang, D. K.; Kim, Jae Hoon; Im, Seongil.
In: ECS Transactions, Vol. 1, No. 23, 01.12.2006, p. 29-39.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Semi-transparent UV-detecting ZnO-TFTs with polymer gate dielectric
AU - Lee, Kimoon
AU - Bae, H. S.
AU - Choi, Jeong M.
AU - Hwang, D. K.
AU - Kim, Jae Hoon
AU - Im, Seongil
PY - 2006/12/1
Y1 - 2006/12/1
N2 - We report on the fabrication of ZnO-based ultraviolet (UV)-detecting thin-film transistors (TFTs) with a semitransparent conducting NiOx top-gate electrode window and 450 nm-thick poly-4-vinylphenol (PVP) gate dielectric layer that has been formed on n-ZnO by spin-casting. The field effect electron mobility of our device was only about 0.0032 cm2/Vs at the saturation regime of gate bias showing a low saturation current level in the dark because the PVP dielectric has a relatively low dielectric capacitance (7.4 nF/cm2). The on/off current ratio of the device was about 103. However, the current increased up by more than 30 times with UV illumination of 325 nm wavelength (power density ∼50 μW/cm2) while the initial current level was not varied with visible green illumination. We conclude that our ZnO-TFT with organic gate dielectric can be a promising transparent UV-detecting device. copyright The Electrochemical Society.
AB - We report on the fabrication of ZnO-based ultraviolet (UV)-detecting thin-film transistors (TFTs) with a semitransparent conducting NiOx top-gate electrode window and 450 nm-thick poly-4-vinylphenol (PVP) gate dielectric layer that has been formed on n-ZnO by spin-casting. The field effect electron mobility of our device was only about 0.0032 cm2/Vs at the saturation regime of gate bias showing a low saturation current level in the dark because the PVP dielectric has a relatively low dielectric capacitance (7.4 nF/cm2). The on/off current ratio of the device was about 103. However, the current increased up by more than 30 times with UV illumination of 325 nm wavelength (power density ∼50 μW/cm2) while the initial current level was not varied with visible green illumination. We conclude that our ZnO-TFT with organic gate dielectric can be a promising transparent UV-detecting device. copyright The Electrochemical Society.
UR - http://www.scopus.com/inward/record.url?scp=33846809347&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33846809347&partnerID=8YFLogxK
U2 - 10.1149/1.2209345
DO - 10.1149/1.2209345
M3 - Conference article
AN - SCOPUS:33846809347
VL - 1
SP - 29
EP - 39
JO - ECS Transactions
JF - ECS Transactions
SN - 1938-5862
IS - 23
ER -