Semi-transparent UV-detecting ZnO-TFTs with polymer gate dielectric

Kimoon Lee, H. S. Bae, Jeong M. Choi, D. K. Hwang, Jae Hoon Kim, Seongil Im

Research output: Contribution to journalConference article

Abstract

We report on the fabrication of ZnO-based ultraviolet (UV)-detecting thin-film transistors (TFTs) with a semitransparent conducting NiOx top-gate electrode window and 450 nm-thick poly-4-vinylphenol (PVP) gate dielectric layer that has been formed on n-ZnO by spin-casting. The field effect electron mobility of our device was only about 0.0032 cm2/Vs at the saturation regime of gate bias showing a low saturation current level in the dark because the PVP dielectric has a relatively low dielectric capacitance (7.4 nF/cm2). The on/off current ratio of the device was about 103. However, the current increased up by more than 30 times with UV illumination of 325 nm wavelength (power density ∼50 μW/cm2) while the initial current level was not varied with visible green illumination. We conclude that our ZnO-TFT with organic gate dielectric can be a promising transparent UV-detecting device. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)29-39
Number of pages11
JournalECS Transactions
Volume1
Issue number23
DOIs
Publication statusPublished - 2006 Dec 1
EventStudent Posters (General) - 208th Electrochemical Society Meeting - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

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Gate dielectrics
Thin film transistors
Ultraviolet devices
Lighting
Electron mobility
Polymers
Casting
Capacitance
Fabrication
Wavelength
Electrodes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lee, Kimoon ; Bae, H. S. ; Choi, Jeong M. ; Hwang, D. K. ; Kim, Jae Hoon ; Im, Seongil. / Semi-transparent UV-detecting ZnO-TFTs with polymer gate dielectric. In: ECS Transactions. 2006 ; Vol. 1, No. 23. pp. 29-39.
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abstract = "We report on the fabrication of ZnO-based ultraviolet (UV)-detecting thin-film transistors (TFTs) with a semitransparent conducting NiOx top-gate electrode window and 450 nm-thick poly-4-vinylphenol (PVP) gate dielectric layer that has been formed on n-ZnO by spin-casting. The field effect electron mobility of our device was only about 0.0032 cm2/Vs at the saturation regime of gate bias showing a low saturation current level in the dark because the PVP dielectric has a relatively low dielectric capacitance (7.4 nF/cm2). The on/off current ratio of the device was about 103. However, the current increased up by more than 30 times with UV illumination of 325 nm wavelength (power density ∼50 μW/cm2) while the initial current level was not varied with visible green illumination. We conclude that our ZnO-TFT with organic gate dielectric can be a promising transparent UV-detecting device. copyright The Electrochemical Society.",
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Semi-transparent UV-detecting ZnO-TFTs with polymer gate dielectric. / Lee, Kimoon; Bae, H. S.; Choi, Jeong M.; Hwang, D. K.; Kim, Jae Hoon; Im, Seongil.

In: ECS Transactions, Vol. 1, No. 23, 01.12.2006, p. 29-39.

Research output: Contribution to journalConference article

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