Semiconductor-dielectric blends: A facile all solution route to flexible all-organic transistors

Wi Hyoung Lee, Jung Ah Lim, Donghoon Kwak, Jeong Ho Cho, Hwa Sung Lee, Hyun Ho Choi, Kilwon Cho

Research output: Contribution to journalArticle

96 Citations (Scopus)

Abstract

(Figure Presented) A one-step process for the production of all-organic, all-solution-processed field-effect transistors (FETs) can be achieved using triethylsilylethynyl anthradithiophene (TES-ADT). TES-ADT has a lower surface energy than poly(methyl methacrylate) (PMMA), which results in a segregation and crystal formation of TES-ADT at the air-film interface after spin-casting and subsequent solvent annealing. The resulting FETs comprise vertically phase-separated semiconducting and dielectric layers and exhibit high performances.

Original languageEnglish
Pages (from-to)4243-4248
Number of pages6
JournalAdvanced Materials
Volume21
Issue number42
DOIs
Publication statusPublished - 2009 Nov 13

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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