Semiconductor-dielectric blends: A facile all solution route to flexible all-organic transistors

Wi Hyoung Lee, Jung Ah Lim, Donghoon Kwak, Jeong Ho Cho, Hwa Sung Lee, Hyun Ho Choi, Kilwon Cho

Research output: Contribution to journalArticle

88 Citations (Scopus)

Abstract

(Figure Presented) A one-step process for the production of all-organic, all-solution-processed field-effect transistors (FETs) can be achieved using triethylsilylethynyl anthradithiophene (TES-ADT). TES-ADT has a lower surface energy than poly(methyl methacrylate) (PMMA), which results in a segregation and crystal formation of TES-ADT at the air-film interface after spin-casting and subsequent solvent annealing. The resulting FETs comprise vertically phase-separated semiconducting and dielectric layers and exhibit high performances.

Original languageEnglish
Pages (from-to)4243-4248
Number of pages6
JournalAdvanced Materials
Volume21
Issue number42
DOIs
Publication statusPublished - 2009 Nov 13

Fingerprint

Field effect transistors
Transistors
Semiconductor materials
Polymethyl methacrylates
Interfacial energy
Casting
Polymethyl Methacrylate
Annealing
Crystals
Air
anthradithiophene

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, Wi Hyoung ; Lim, Jung Ah ; Kwak, Donghoon ; Cho, Jeong Ho ; Lee, Hwa Sung ; Choi, Hyun Ho ; Cho, Kilwon. / Semiconductor-dielectric blends : A facile all solution route to flexible all-organic transistors. In: Advanced Materials. 2009 ; Vol. 21, No. 42. pp. 4243-4248.
@article{14808eaaf90e4b9e92893de02c42887b,
title = "Semiconductor-dielectric blends: A facile all solution route to flexible all-organic transistors",
abstract = "(Figure Presented) A one-step process for the production of all-organic, all-solution-processed field-effect transistors (FETs) can be achieved using triethylsilylethynyl anthradithiophene (TES-ADT). TES-ADT has a lower surface energy than poly(methyl methacrylate) (PMMA), which results in a segregation and crystal formation of TES-ADT at the air-film interface after spin-casting and subsequent solvent annealing. The resulting FETs comprise vertically phase-separated semiconducting and dielectric layers and exhibit high performances.",
author = "Lee, {Wi Hyoung} and Lim, {Jung Ah} and Donghoon Kwak and Cho, {Jeong Ho} and Lee, {Hwa Sung} and Choi, {Hyun Ho} and Kilwon Cho",
year = "2009",
month = "11",
day = "13",
doi = "10.1002/adma.200900277",
language = "English",
volume = "21",
pages = "4243--4248",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "42",

}

Semiconductor-dielectric blends : A facile all solution route to flexible all-organic transistors. / Lee, Wi Hyoung; Lim, Jung Ah; Kwak, Donghoon; Cho, Jeong Ho; Lee, Hwa Sung; Choi, Hyun Ho; Cho, Kilwon.

In: Advanced Materials, Vol. 21, No. 42, 13.11.2009, p. 4243-4248.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Semiconductor-dielectric blends

T2 - A facile all solution route to flexible all-organic transistors

AU - Lee, Wi Hyoung

AU - Lim, Jung Ah

AU - Kwak, Donghoon

AU - Cho, Jeong Ho

AU - Lee, Hwa Sung

AU - Choi, Hyun Ho

AU - Cho, Kilwon

PY - 2009/11/13

Y1 - 2009/11/13

N2 - (Figure Presented) A one-step process for the production of all-organic, all-solution-processed field-effect transistors (FETs) can be achieved using triethylsilylethynyl anthradithiophene (TES-ADT). TES-ADT has a lower surface energy than poly(methyl methacrylate) (PMMA), which results in a segregation and crystal formation of TES-ADT at the air-film interface after spin-casting and subsequent solvent annealing. The resulting FETs comprise vertically phase-separated semiconducting and dielectric layers and exhibit high performances.

AB - (Figure Presented) A one-step process for the production of all-organic, all-solution-processed field-effect transistors (FETs) can be achieved using triethylsilylethynyl anthradithiophene (TES-ADT). TES-ADT has a lower surface energy than poly(methyl methacrylate) (PMMA), which results in a segregation and crystal formation of TES-ADT at the air-film interface after spin-casting and subsequent solvent annealing. The resulting FETs comprise vertically phase-separated semiconducting and dielectric layers and exhibit high performances.

UR - http://www.scopus.com/inward/record.url?scp=71849118563&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71849118563&partnerID=8YFLogxK

U2 - 10.1002/adma.200900277

DO - 10.1002/adma.200900277

M3 - Article

AN - SCOPUS:71849118563

VL - 21

SP - 4243

EP - 4248

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 42

ER -