Sensing circuit optimization using different type of transistors for deep submicron STT-RAM

Byungkyu Song, Taehui Na, Jisu Kim, Seung H. Kang, Jung Pill Kim, Seongook Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we propose an optimal combination of transistor types in the conventional sensing circuit. A sensing margin, which determines the read yield of STT-RAM, is sensitive to the Vth type of several transistors in the sensing circuit. Thus, the optimization of the sensing circuit using different types of transistors is imptortant for designing the sensing circuit in STT-RAM. Using industry compatible 45-nm model parameters, Monte Carlo HSPICE simulation results show that the conventional sensing circuit optimized using different types of tansistors achieves read access pass yield enhancement of 10% when compared to the conventional sensing circuit using typical transistors.

Original languageEnglish
Title of host publicationISOCC 2013 - 2013 International SoC Design Conference
PublisherIEEE Computer Society
Pages68-71
Number of pages4
ISBN (Print)9781479911417
DOIs
Publication statusPublished - 2013 Jan 1
Event2013 International SoC Design Conference, ISOCC 2013 - Busan, Korea, Republic of
Duration: 2013 Nov 172013 Nov 19

Other

Other2013 International SoC Design Conference, ISOCC 2013
CountryKorea, Republic of
CityBusan
Period13/11/1713/11/19

Fingerprint

Random access storage
Transistors
Networks (circuits)
Industry

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Song, B., Na, T., Kim, J., Kang, S. H., Kim, J. P., & Jung, S. (2013). Sensing circuit optimization using different type of transistors for deep submicron STT-RAM. In ISOCC 2013 - 2013 International SoC Design Conference (pp. 68-71). [6863987] IEEE Computer Society. https://doi.org/10.1109/ISOCC.2013.6863987
Song, Byungkyu ; Na, Taehui ; Kim, Jisu ; Kang, Seung H. ; Kim, Jung Pill ; Jung, Seongook. / Sensing circuit optimization using different type of transistors for deep submicron STT-RAM. ISOCC 2013 - 2013 International SoC Design Conference. IEEE Computer Society, 2013. pp. 68-71
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abstract = "In this paper, we propose an optimal combination of transistor types in the conventional sensing circuit. A sensing margin, which determines the read yield of STT-RAM, is sensitive to the Vth type of several transistors in the sensing circuit. Thus, the optimization of the sensing circuit using different types of transistors is imptortant for designing the sensing circuit in STT-RAM. Using industry compatible 45-nm model parameters, Monte Carlo HSPICE simulation results show that the conventional sensing circuit optimized using different types of tansistors achieves read access pass yield enhancement of 10{\%} when compared to the conventional sensing circuit using typical transistors.",
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Song, B, Na, T, Kim, J, Kang, SH, Kim, JP & Jung, S 2013, Sensing circuit optimization using different type of transistors for deep submicron STT-RAM. in ISOCC 2013 - 2013 International SoC Design Conference., 6863987, IEEE Computer Society, pp. 68-71, 2013 International SoC Design Conference, ISOCC 2013, Busan, Korea, Republic of, 13/11/17. https://doi.org/10.1109/ISOCC.2013.6863987

Sensing circuit optimization using different type of transistors for deep submicron STT-RAM. / Song, Byungkyu; Na, Taehui; Kim, Jisu; Kang, Seung H.; Kim, Jung Pill; Jung, Seongook.

ISOCC 2013 - 2013 International SoC Design Conference. IEEE Computer Society, 2013. p. 68-71 6863987.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Song B, Na T, Kim J, Kang SH, Kim JP, Jung S. Sensing circuit optimization using different type of transistors for deep submicron STT-RAM. In ISOCC 2013 - 2013 International SoC Design Conference. IEEE Computer Society. 2013. p. 68-71. 6863987 https://doi.org/10.1109/ISOCC.2013.6863987