Sensing extremely limited H2 contents by Pd nanogap connected to an amorphous InGaZnO thin-film transistor

Young Tack Lee, Hwaebong Jung, Seung Hee Nam, Pyo Jin Jeon, Jin Sung Kim, Byungjin Jang, Wooyoung Lee, Seongil Im

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


A palladium (Pd) nanogap-based thin-film has been connected to an electrically stable amorphous InGaZnO thin-film transistor, to form a hydrogen sensor demonstrating a dramatic sensing capability. As a result of the Pd connection to the transistor source, our sensor circuit greatly enhances the hydrogen-induced signal and sensing speed in the sense of output voltage, clearly resolving a minimum hydrogen content of 0.05%. When the nanogap-based Pd thin-film was connected to the transistor gate, an extremely limited hydrogen content of even less than 0.05% was visibly detected through gate voltage shifts. Our results exhibit the most promising and practical ways to sense extremely limited hydrogen contents, originating from two methods: transistor-to-Pd nanogap resistor and transistor-to-Pd nanogap capacitor coupling.

Original languageEnglish
Pages (from-to)8915-8920
Number of pages6
Issue number19
Publication statusPublished - 2013 Oct 7

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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