Sensitivity controllable CMOS image sensor pixel using control gate overlaid on photodiode

Youngcheol Chae, Kunil Choe, Bokyung Kim, Gunhee Han

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A new sensitivity controllable pixel structure is proposed for CMOS active-pixel image sensor. The proposed pixel structure has a sensitivity control gate overlaid on the photodiode. The sensitivity of the pixel is controlled by the bias voltage of the control gate that forms a variable accumulation-mode MOS capacitor. The prototype sensor is fabricated with a 0.35-μm CMOS process and consists of 60 × 240 pixels with 5.6- μm pixel pitch. Measurement results show that the sensitivity of the photodiode can be controlled by a factor of 4.

Original languageEnglish
Pages (from-to)495-498
Number of pages4
JournalIEEE Electron Device Letters
Volume28
Issue number6
DOIs
Publication statusPublished - 2007 Jun 1

Fingerprint

Photodiodes
Image sensors
Pixels
MOS capacitors
Bias voltage
Sensors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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Sensitivity controllable CMOS image sensor pixel using control gate overlaid on photodiode. / Chae, Youngcheol; Choe, Kunil; Kim, Bokyung; Han, Gunhee.

In: IEEE Electron Device Letters, Vol. 28, No. 6, 01.06.2007, p. 495-498.

Research output: Contribution to journalArticle

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