Sensitivity controllable CMOS image sensor pixel using control gate overlaid on photodiode

Youngcheol Chae, Kunil Choe, Bokyung Kim, Gunhee Han

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

A new sensitivity controllable pixel structure is proposed for CMOS active-pixel image sensor. The proposed pixel structure has a sensitivity control gate overlaid on the photodiode. The sensitivity of the pixel is controlled by the bias voltage of the control gate that forms a variable accumulation-mode MOS capacitor. The prototype sensor is fabricated with a 0.35-μm CMOS process and consists of 60 × 240 pixels with 5.6- μm pixel pitch. Measurement results show that the sensitivity of the photodiode can be controlled by a factor of 4.

Original languageEnglish
Pages (from-to)495-498
Number of pages4
JournalIEEE Electron Device Letters
Volume28
Issue number6
DOIs
Publication statusPublished - 2007 Jun

Bibliographical note

Funding Information:
Manuscript received March 23, 2007; revised April 4, 2007. This work was supported in part by the Ministry of Information and Communications, Korea, under the Information Technology Research Center Support Program, and in part by Samsung Electronics Co. Ltd. The review of this letter was arranged by Editor P. Yu.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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