Series resistance influence on performance of waveguidetype germanium photodetectors on silicon

Jeong Min Lee, Minkyu Kim, Woo Young Choi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We investigate influences of series resistances on the performance of 1.55 μm waveguide-type germanium photodetectors (Ge-PDs) on a silicon-on-insulator substrate. The current-voltage characteristics, responsivities, saturation photo-current characteristics, electrical reflection coefficients, and photodetection frequency responses of Ge-PDs, having different series resistances, are measured, and their equivalent circuit models are established. By analyzing the resulting circuit model parameters, we determine how much Ge-PD series resistances influence Ge-PD saturation photo-currents and photodetection bandwidth. These results should be of great use for optimization of Ge-PD fabrication processes and device parameters for target applications.

Original languageEnglish
Article number100401
JournalChinese Optics Letters
Volume15
Issue number10
DOIs
Publication statusPublished - 2017 Oct 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Series resistance influence on performance of waveguidetype germanium photodetectors on silicon'. Together they form a unique fingerprint.

  • Cite this