We investigate influences of series resistances on the performance of 1.55 μm waveguide-type germanium photodetectors (Ge-PDs) on a silicon-on-insulator substrate. The current-voltage characteristics, responsivities, saturation photo-current characteristics, electrical reflection coefficients, and photodetection frequency responses of Ge-PDs, having different series resistances, are measured, and their equivalent circuit models are established. By analyzing the resulting circuit model parameters, we determine how much Ge-PD series resistances influence Ge-PD saturation photo-currents and photodetection bandwidth. These results should be of great use for optimization of Ge-PD fabrication processes and device parameters for target applications.
Bibliographical noteFunding Information:
This work was supported in part by the National Research Foundation of Korea through the Korean Ministry of Science, ICT, and Future Planning under Grant No. 2015R1A2A2A01007772 and in part by the Materials and Parts Technology Research and Development Program through the Korean Ministry of Trade, Industry & Energy under Project No. 10065666.
© 2017 Chinese Optics Letters.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering