SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors

Hyun Seop Kim, Kwang Seok Seo, Jungwoo Oh, Ho Young Cha

Research output: Contribution to journalArticle

Abstract

In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 min. It was found that the SF6 plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces.

Original languageEnglish
Pages (from-to)248-249
Number of pages2
JournalResults in Physics
Volume10
DOIs
Publication statusPublished - 2018 Sep 1

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heterojunctions
isolation
leakage
field effect transistors
plasma etching
etching
photoelectron spectroscopy
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors",
abstract = "In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 min. It was found that the SF6 plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces.",
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SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors. / Kim, Hyun Seop; Seo, Kwang Seok; Oh, Jungwoo; Cha, Ho Young.

In: Results in Physics, Vol. 10, 01.09.2018, p. 248-249.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Kim, Hyun Seop

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AU - Oh, Jungwoo

AU - Cha, Ho Young

PY - 2018/9/1

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AB - In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 min. It was found that the SF6 plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces.

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