In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 min. It was found that the SF6 plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces.
Bibliographical noteFunding Information:
This work was supported by the Civil-Military Technology Cooperation Program (No. 17-CM-MA-03) and Basic Science Research Programs (2015R1A6A1A03031833, 2016R1D1A1B03935445) through NRF of Korea.
© 2018 The Authors
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)