Si and Si-compatible photodetectors

Joe C. Campbell, Zhihong Huang, Ning Kong, Jungwoo Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report photodiodes fabricated on Ge grown on Si substrate. At 2V bias these photodiodes exhibited 28mA/cm 2 dark current, 0.57A/W responsivity, and 4GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.

Original languageEnglish
Title of host publication2005 IEEE International Conference on Group IV Photonics
Pages183-185
Number of pages3
Volume2005
DOIs
Publication statusPublished - 2005 Dec 1
Event2005 IEEE International Conference on Group IV Photonics - Antwerp, Belgium
Duration: 2005 Sep 212005 Sep 23

Other

Other2005 IEEE International Conference on Group IV Photonics
CountryBelgium
CityAntwerp
Period05/9/2105/9/23

Fingerprint

Photodetectors
Photodiodes
Dark currents
Bandwidth
Fabrication
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Campbell, J. C., Huang, Z., Kong, N., & Oh, J. (2005). Si and Si-compatible photodetectors. In 2005 IEEE International Conference on Group IV Photonics (Vol. 2005, pp. 183-185). [1516446] https://doi.org/10.1109/GROUP4.2005.1516446
Campbell, Joe C. ; Huang, Zhihong ; Kong, Ning ; Oh, Jungwoo. / Si and Si-compatible photodetectors. 2005 IEEE International Conference on Group IV Photonics. Vol. 2005 2005. pp. 183-185
@inproceedings{7935ca096e3e480fbea2fa92f17f289b,
title = "Si and Si-compatible photodetectors",
abstract = "We report photodiodes fabricated on Ge grown on Si substrate. At 2V bias these photodiodes exhibited 28mA/cm 2 dark current, 0.57A/W responsivity, and 4GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.",
author = "Campbell, {Joe C.} and Zhihong Huang and Ning Kong and Jungwoo Oh",
year = "2005",
month = "12",
day = "1",
doi = "10.1109/GROUP4.2005.1516446",
language = "English",
isbn = "0780390709",
volume = "2005",
pages = "183--185",
booktitle = "2005 IEEE International Conference on Group IV Photonics",

}

Campbell, JC, Huang, Z, Kong, N & Oh, J 2005, Si and Si-compatible photodetectors. in 2005 IEEE International Conference on Group IV Photonics. vol. 2005, 1516446, pp. 183-185, 2005 IEEE International Conference on Group IV Photonics, Antwerp, Belgium, 05/9/21. https://doi.org/10.1109/GROUP4.2005.1516446

Si and Si-compatible photodetectors. / Campbell, Joe C.; Huang, Zhihong; Kong, Ning; Oh, Jungwoo.

2005 IEEE International Conference on Group IV Photonics. Vol. 2005 2005. p. 183-185 1516446.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Si and Si-compatible photodetectors

AU - Campbell, Joe C.

AU - Huang, Zhihong

AU - Kong, Ning

AU - Oh, Jungwoo

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We report photodiodes fabricated on Ge grown on Si substrate. At 2V bias these photodiodes exhibited 28mA/cm 2 dark current, 0.57A/W responsivity, and 4GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.

AB - We report photodiodes fabricated on Ge grown on Si substrate. At 2V bias these photodiodes exhibited 28mA/cm 2 dark current, 0.57A/W responsivity, and 4GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.

UR - http://www.scopus.com/inward/record.url?scp=33746857702&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746857702&partnerID=8YFLogxK

U2 - 10.1109/GROUP4.2005.1516446

DO - 10.1109/GROUP4.2005.1516446

M3 - Conference contribution

SN - 0780390709

SN - 9780780390706

VL - 2005

SP - 183

EP - 185

BT - 2005 IEEE International Conference on Group IV Photonics

ER -

Campbell JC, Huang Z, Kong N, Oh J. Si and Si-compatible photodetectors. In 2005 IEEE International Conference on Group IV Photonics. Vol. 2005. 2005. p. 183-185. 1516446 https://doi.org/10.1109/GROUP4.2005.1516446