Si and Si-compatible photodetectors

Joe C. Campbell, Zhihong Huang, Ning Kong, Jungwoo Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report photodiodes fabricated on Ge grown on Si substrate. At 2V bias these photodiodes exhibited 28mA/cm 2 dark current, 0.57A/W responsivity, and 4GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.

Original languageEnglish
Title of host publication2005 IEEE International Conference on Group IV Photonics
Pages183-185
Number of pages3
DOIs
Publication statusPublished - 2005
Event2005 IEEE International Conference on Group IV Photonics - Antwerp, Belgium
Duration: 2005 Sep 212005 Sep 23

Publication series

Name2005 IEEE International Conference on Group IV Photonics
Volume2005

Other

Other2005 IEEE International Conference on Group IV Photonics
CountryBelgium
CityAntwerp
Period05/9/2105/9/23

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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