Si and Si-compatible photodetectors

Joe C. Campbell; Zhihong Huang; Ning Kong; Jungwoo Oh

doi:10.1109/GROUP4.2005.1516446

Si and Si-compatible photodetectors

Joe C. Campbell, Zhihong Huang, Ning Kong, Jungwoo Oh

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We report photodiodes fabricated on Ge grown on Si substrate. At 2V bias these photodiodes exhibited 28mA/cm ² dark current, 0.57A/W responsivity, and 4GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.

Original language	English
Title of host publication	2005 IEEE International Conference on Group IV Photonics
Pages	183-185
Number of pages	3
DOIs	https://doi.org/10.1109/GROUP4.2005.1516446
Publication status	Published - 2005
Event	2005 IEEE International Conference on Group IV Photonics - Antwerp, Belgium Duration: 2005 Sep 21 → 2005 Sep 23

Publication series

Name	2005 IEEE International Conference on Group IV Photonics
Volume	2005

Other

Other	2005 IEEE International Conference on Group IV Photonics
Country	Belgium
City	Antwerp
Period	05/9/21 → 05/9/23

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/GROUP4.2005.1516446

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@inproceedings{7935ca096e3e480fbea2fa92f17f289b,

title = "Si and Si-compatible photodetectors",

abstract = "We report photodiodes fabricated on Ge grown on Si substrate. At 2V bias these photodiodes exhibited 28mA/cm 2 dark current, 0.57A/W responsivity, and 4GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.",

author = "Campbell, {Joe C.} and Zhihong Huang and Ning Kong and Jungwoo Oh",

year = "2005",

doi = "10.1109/GROUP4.2005.1516446",

language = "English",

isbn = "0780390709",

series = "2005 IEEE International Conference on Group IV Photonics",

pages = "183--185",

booktitle = "2005 IEEE International Conference on Group IV Photonics",

}

TY - GEN

T1 - Si and Si-compatible photodetectors

AU - Campbell, Joe C.

AU - Huang, Zhihong

AU - Kong, Ning

AU - Oh, Jungwoo

PY - 2005

Y1 - 2005

N2 - We report photodiodes fabricated on Ge grown on Si substrate. At 2V bias these photodiodes exhibited 28mA/cm 2 dark current, 0.57A/W responsivity, and 4GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.

AB - We report photodiodes fabricated on Ge grown on Si substrate. At 2V bias these photodiodes exhibited 28mA/cm 2 dark current, 0.57A/W responsivity, and 4GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.

UR - http://www.scopus.com/inward/record.url?scp=33746857702&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746857702&partnerID=8YFLogxK

U2 - 10.1109/GROUP4.2005.1516446

DO - 10.1109/GROUP4.2005.1516446

M3 - Conference contribution

AN - SCOPUS:33746857702

SN - 0780390709

SN - 9780780390706

T3 - 2005 IEEE International Conference on Group IV Photonics

SP - 183

EP - 185

BT - 2005 IEEE International Conference on Group IV Photonics

T2 - 2005 IEEE International Conference on Group IV Photonics

Y2 - 21 September 2005 through 23 September 2005

ER -