TY - GEN
T1 - Si and Si-compatible photodetectors
AU - Campbell, Joe C.
AU - Huang, Zhihong
AU - Kong, Ning
AU - Oh, Jungwoo
PY - 2005
Y1 - 2005
N2 - We report photodiodes fabricated on Ge grown on Si substrate. At 2V bias these photodiodes exhibited 28mA/cm 2 dark current, 0.57A/W responsivity, and 4GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.
AB - We report photodiodes fabricated on Ge grown on Si substrate. At 2V bias these photodiodes exhibited 28mA/cm 2 dark current, 0.57A/W responsivity, and 4GHz bandwidth. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs is also described.
UR - http://www.scopus.com/inward/record.url?scp=33746857702&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33746857702&partnerID=8YFLogxK
U2 - 10.1109/GROUP4.2005.1516446
DO - 10.1109/GROUP4.2005.1516446
M3 - Conference contribution
AN - SCOPUS:33746857702
SN - 0780390709
SN - 9780780390706
T3 - 2005 IEEE International Conference on Group IV Photonics
SP - 183
EP - 185
BT - 2005 IEEE International Conference on Group IV Photonics
T2 - 2005 IEEE International Conference on Group IV Photonics
Y2 - 21 September 2005 through 23 September 2005
ER -