Si avalanche photo detectors fabricated in standard complementary metal-oxide-semiconductor process

Hyo Soon Kang; Myung Jae Lee; Woo Young Choi

doi:10.1063/1.2722028

Si avalanche photo detectors fabricated in standard complementary metal-oxide-semiconductor process

Hyo Soon Kang, Myung Jae Lee, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

The authors report silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process without any process modification or a special substrate. When the bias is above the avalanche breakdown voltage, CMOS-compatible APD (CMOS-APD) exhibits negative photoconductance in photocurrent-voltage relationship and rf peaking in the photodetection frequency response. The reflection coefficient measurement of CMOS-APD indicates that rf peaking is due to resonance caused by appearance of inductive components in avalanche region. The rf-peaking frequency increases with the increasing reverse bias voltage.

Original language	English
Article number	151118
Journal	Applied Physics Letters
Volume	90
Issue number	15
DOIs	https://doi.org/10.1063/1.2722028
Publication status	Published - 2007

Bibliographical note

Funding Information:
This research was supported by the MIC (Ministry of Information and Communication), Korea, under the ITRC (Information Technology Research Center) support program supervised by the IITA (Institute of Information Technology Advancement) [IITA-2006-(C1090-0603-0012)].

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2722028

Cite this

@article{302810fcfc2b4843b7cc000a15b0694d,

title = "Si avalanche photo detectors fabricated in standard complementary metal-oxide-semiconductor process",

abstract = "The authors report silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process without any process modification or a special substrate. When the bias is above the avalanche breakdown voltage, CMOS-compatible APD (CMOS-APD) exhibits negative photoconductance in photocurrent-voltage relationship and rf peaking in the photodetection frequency response. The reflection coefficient measurement of CMOS-APD indicates that rf peaking is due to resonance caused by appearance of inductive components in avalanche region. The rf-peaking frequency increases with the increasing reverse bias voltage.",

author = "Kang, {Hyo Soon} and Lee, {Myung Jae} and Choi, {Woo Young}",

note = "Funding Information: This research was supported by the MIC (Ministry of Information and Communication), Korea, under the ITRC (Information Technology Research Center) support program supervised by the IITA (Institute of Information Technology Advancement) [IITA-2006-(C1090-0603-0012)].",

year = "2007",

doi = "10.1063/1.2722028",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Si avalanche photo detectors fabricated in standard complementary metal-oxide-semiconductor process

AU - Kang, Hyo Soon

AU - Lee, Myung Jae

AU - Choi, Woo Young

N1 - Funding Information: This research was supported by the MIC (Ministry of Information and Communication), Korea, under the ITRC (Information Technology Research Center) support program supervised by the IITA (Institute of Information Technology Advancement) [IITA-2006-(C1090-0603-0012)].

PY - 2007

Y1 - 2007

N2 - The authors report silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process without any process modification or a special substrate. When the bias is above the avalanche breakdown voltage, CMOS-compatible APD (CMOS-APD) exhibits negative photoconductance in photocurrent-voltage relationship and rf peaking in the photodetection frequency response. The reflection coefficient measurement of CMOS-APD indicates that rf peaking is due to resonance caused by appearance of inductive components in avalanche region. The rf-peaking frequency increases with the increasing reverse bias voltage.

AB - The authors report silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process without any process modification or a special substrate. When the bias is above the avalanche breakdown voltage, CMOS-compatible APD (CMOS-APD) exhibits negative photoconductance in photocurrent-voltage relationship and rf peaking in the photodetection frequency response. The reflection coefficient measurement of CMOS-APD indicates that rf peaking is due to resonance caused by appearance of inductive components in avalanche region. The rf-peaking frequency increases with the increasing reverse bias voltage.

UR - http://www.scopus.com/inward/record.url?scp=34247233986&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247233986&partnerID=8YFLogxK

U2 - 10.1063/1.2722028

DO - 10.1063/1.2722028

M3 - Article

AN - SCOPUS:34247233986

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 151118

ER -

Si avalanche photo detectors fabricated in standard complementary metal-oxide-semiconductor process

Abstract

Bibliographical note

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