Abstract
The authors report silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process without any process modification or a special substrate. When the bias is above the avalanche breakdown voltage, CMOS-compatible APD (CMOS-APD) exhibits negative photoconductance in photocurrent-voltage relationship and rf peaking in the photodetection frequency response. The reflection coefficient measurement of CMOS-APD indicates that rf peaking is due to resonance caused by appearance of inductive components in avalanche region. The rf-peaking frequency increases with the increasing reverse bias voltage.
| Original language | English |
|---|---|
| Article number | 151118 |
| Journal | Applied Physics Letters |
| Volume | 90 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2007 Apr 24 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Si avalanche photo detectors fabricated in standard complementary metal-oxide-semiconductor process. / Kang, Hyo Soon; Lee, Myung Jae; Choi, Woo Young.
In: Applied Physics Letters, Vol. 90, No. 15, 151118, 24.04.2007.Research output: Contribution to journal › Article
TY - JOUR
T1 - Si avalanche photo detectors fabricated in standard complementary metal-oxide-semiconductor process
AU - Kang, Hyo Soon
AU - Lee, Myung Jae
AU - Choi, Woo Young
PY - 2007/4/24
Y1 - 2007/4/24
N2 - The authors report silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process without any process modification or a special substrate. When the bias is above the avalanche breakdown voltage, CMOS-compatible APD (CMOS-APD) exhibits negative photoconductance in photocurrent-voltage relationship and rf peaking in the photodetection frequency response. The reflection coefficient measurement of CMOS-APD indicates that rf peaking is due to resonance caused by appearance of inductive components in avalanche region. The rf-peaking frequency increases with the increasing reverse bias voltage.
AB - The authors report silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process without any process modification or a special substrate. When the bias is above the avalanche breakdown voltage, CMOS-compatible APD (CMOS-APD) exhibits negative photoconductance in photocurrent-voltage relationship and rf peaking in the photodetection frequency response. The reflection coefficient measurement of CMOS-APD indicates that rf peaking is due to resonance caused by appearance of inductive components in avalanche region. The rf-peaking frequency increases with the increasing reverse bias voltage.
UR - http://www.scopus.com/inward/record.url?scp=34247233986&partnerID=8YFLogxK
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U2 - 10.1063/1.2722028
DO - 10.1063/1.2722028
M3 - Article
AN - SCOPUS:34247233986
VL - 90
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
M1 - 151118
ER -