Si avalanche photo detectors fabricated in standard complementary metal-oxide-semiconductor process

Hyo Soon Kang, Myung Jae Lee, Woo Young Choi

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66 Citations (Scopus)

Abstract

The authors report silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process without any process modification or a special substrate. When the bias is above the avalanche breakdown voltage, CMOS-compatible APD (CMOS-APD) exhibits negative photoconductance in photocurrent-voltage relationship and rf peaking in the photodetection frequency response. The reflection coefficient measurement of CMOS-APD indicates that rf peaking is due to resonance caused by appearance of inductive components in avalanche region. The rf-peaking frequency increases with the increasing reverse bias voltage.

Original languageEnglish
Article number151118
JournalApplied Physics Letters
Volume90
Issue number15
DOIs
Publication statusPublished - 2007

Bibliographical note

Funding Information:
This research was supported by the MIC (Ministry of Information and Communication), Korea, under the ITRC (Information Technology Research Center) support program supervised by the IITA (Institute of Information Technology Advancement) [IITA-2006-(C1090-0603-0012)].

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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