Si avalanche photo detectors fabricated in standard complementary metal-oxide-semiconductor process

Hyo Soon Kang; Myung Jae Lee; Woo Young Choi

doi:10.1063/1.2722028

Si avalanche photo detectors fabricated in standard complementary metal-oxide-semiconductor process

Hyo Soon Kang, Myung Jae Lee, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

The authors report silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process without any process modification or a special substrate. When the bias is above the avalanche breakdown voltage, CMOS-compatible APD (CMOS-APD) exhibits negative photoconductance in photocurrent-voltage relationship and rf peaking in the photodetection frequency response. The reflection coefficient measurement of CMOS-APD indicates that rf peaking is due to resonance caused by appearance of inductive components in avalanche region. The rf-peaking frequency increases with the increasing reverse bias voltage.

Original language	English
Article number	151118
Journal	Applied Physics Letters
Volume	90
Issue number	15
DOIs	https://doi.org/10.1063/1.2722028
Publication status	Published - 2007

Bibliographical note

Funding Information:
This research was supported by the MIC (Ministry of Information and Communication), Korea, under the ITRC (Information Technology Research Center) support program supervised by the IITA (Institute of Information Technology Advancement) [IITA-2006-(C1090-0603-0012)].

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2722028

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title = "Si avalanche photo detectors fabricated in standard complementary metal-oxide-semiconductor process",

abstract = "The authors report silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process without any process modification or a special substrate. When the bias is above the avalanche breakdown voltage, CMOS-compatible APD (CMOS-APD) exhibits negative photoconductance in photocurrent-voltage relationship and rf peaking in the photodetection frequency response. The reflection coefficient measurement of CMOS-APD indicates that rf peaking is due to resonance caused by appearance of inductive components in avalanche region. The rf-peaking frequency increases with the increasing reverse bias voltage.",

author = "Kang, {Hyo Soon} and Lee, {Myung Jae} and Choi, {Woo Young}",

note = "Funding Information: This research was supported by the MIC (Ministry of Information and Communication), Korea, under the ITRC (Information Technology Research Center) support program supervised by the IITA (Institute of Information Technology Advancement) [IITA-2006-(C1090-0603-0012)].",

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doi = "10.1063/1.2722028",

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Si avalanche photo detectors fabricated in standard complementary metal-oxide-semiconductor process

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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