Abstract
Two Ge on Si photodetectors are reported: MSM photodiodes with an amorphous Ge layer to increase the Schottky barrier height and Ge/Ge xSi 1-x/Si heterojunction photodiodes. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs has also been successfully demonstrated.
Original language | English |
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Article number | 07 |
Pages (from-to) | 50-58 |
Number of pages | 9 |
Journal | Progress in Biomedical Optics and Imaging - Proceedings of SPIE |
Volume | 5730 |
DOIs | |
Publication status | Published - 2005 |
Event | Optoelectronic Integration on Silicon II - San Jose, CA, United States Duration: 2005 Jan 25 → 2005 Jan 26 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Atomic and Molecular Physics, and Optics
- Radiology Nuclear Medicine and imaging