Si integrated photoreceivers

Woo Young Choi, Myung Jae Lee, Jin Sung Youn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper reviews 850nm Si photodetectors and integrated photoreceivers realized with standard Si process technologies including CMOS and BiCMOS. Such photodetectors and photoreceivers are of great interest as they can provide cost-effective optical interconnect receiver solutions. High-speed integrated photoreceivers can be achieved by spatially modulated light, lateral PIN, and P+/N-well junction photodetectors and their performances can be further enhanced with electronic equalizers, all of which can be realized with the standard Si technology.

Original languageEnglish
Title of host publication2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
Pages77-81
Number of pages5
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010 - Austin, TX, United States
Duration: 2010 Oct 42010 Oct 6

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Other

Other2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
CountryUnited States
CityAustin, TX
Period10/10/410/10/6

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Choi, W. Y., Lee, M. J., & Youn, J. S. (2010). Si integrated photoreceivers. In 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010 (pp. 77-81). [5667948] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BIPOL.2010.5667948