TY - GEN
T1 - Si integrated photoreceivers
AU - Choi, Woo Young
AU - Lee, Myung Jae
AU - Youn, Jin Sung
PY - 2010
Y1 - 2010
N2 - This paper reviews 850nm Si photodetectors and integrated photoreceivers realized with standard Si process technologies including CMOS and BiCMOS. Such photodetectors and photoreceivers are of great interest as they can provide cost-effective optical interconnect receiver solutions. High-speed integrated photoreceivers can be achieved by spatially modulated light, lateral PIN, and P+/N-well junction photodetectors and their performances can be further enhanced with electronic equalizers, all of which can be realized with the standard Si technology.
AB - This paper reviews 850nm Si photodetectors and integrated photoreceivers realized with standard Si process technologies including CMOS and BiCMOS. Such photodetectors and photoreceivers are of great interest as they can provide cost-effective optical interconnect receiver solutions. High-speed integrated photoreceivers can be achieved by spatially modulated light, lateral PIN, and P+/N-well junction photodetectors and their performances can be further enhanced with electronic equalizers, all of which can be realized with the standard Si technology.
UR - http://www.scopus.com/inward/record.url?scp=78651389817&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78651389817&partnerID=8YFLogxK
U2 - 10.1109/BIPOL.2010.5667948
DO - 10.1109/BIPOL.2010.5667948
M3 - Conference contribution
AN - SCOPUS:78651389817
SN - 9781424485789
T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
SP - 77
EP - 81
BT - 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
T2 - 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
Y2 - 4 October 2010 through 6 October 2010
ER -