Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications

Ivan Perez-Wurfl, Xiaojing Hao, Angus Gentle, Dong Ho Kim, Gavin Conibeer, Martin A. Green

Research output: Contribution to journalArticle

118 Citations (Scopus)

Abstract

We fabricated p-i-n diodes by sputtering alternating layers of silicon dioxide and silicon rich oxide with a nominal atomic ratio O/Si=0.7 onto quartz substrates with in situ boron for p -type and phosphorus for n -type doping. After crystallization, dark and illuminated I-V characteristics show a diode behavior with an open circuit voltage of 373 mV. Due to the thinness of the layers and their corresponding high resistivity, lateral current flow results in severe current crowding. This effect is taken into account when extracting the electronic bandgap based on temperature dependent diode I-V measurements.

Original languageEnglish
Article number153506
JournalApplied Physics Letters
Volume95
Issue number15
DOIs
Publication statusPublished - 2009 Oct 22

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications'. Together they form a unique fingerprint.

  • Cite this