We fabricated p-i-n diodes by sputtering alternating layers of silicon dioxide and silicon rich oxide with a nominal atomic ratio O/Si=0.7 onto quartz substrates with in situ boron for p -type and phosphorus for n -type doping. After crystallization, dark and illuminated I-V characteristics show a diode behavior with an open circuit voltage of 373 mV. Due to the thinness of the layers and their corresponding high resistivity, lateral current flow results in severe current crowding. This effect is taken into account when extracting the electronic bandgap based on temperature dependent diode I-V measurements.
Bibliographical noteFunding Information:
This work was supported by Stanford University’s Global Climate and Energy Project (GCEP) as well as by the Australian Research Council (ARC) via its Centers of Excellence scheme. D-H. Kim gratefully acknowledges the support by the Korea Research Foundation (MOEHRD) Grant No. KRF-2007-611-D00015.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)