Si tunnel transistors with a novel silicided source and 46mV/dec swing

Kanghoon Jeon; Wei Yip Loh; Pratik Patel; Chang Yong Kang; Jungwoo Oh; Anupama Bowonder; Chanro Park; C. S. Park; Casey Smith; Prashant Majhi; Hsing Huang Tseng; Raj Jammy; Tsu Jae King Liu; Chenming Hu

doi:10.1109/VLSIT.2010.5556195

Si tunnel transistors with a novel silicided source and 46mV/dec swing

Kanghoon Jeon, Wei Yip Loh, Pratik Patel, Chang Yong Kang, Jungwoo Oh, Anupama Bowonder, Chanro Park, C. S. Park, Casey Smith, Prashant Majhi, Hsing Huang Tseng, Raj Jammy, Tsu Jae King Liu, Chenming Hu

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

208 Citations (Scopus)

Abstract

We report a novel tunneling field effect transistor (TFET) fabricated with a high-k/metal gate stack and using nickel silicide to create a special field-enhancing geometry and a high dopant density by dopant segregation. It produces steep subthreshold swing (SS) of 46mV/dec and high I _ON/I_OFF ratio (∼10⁸) and the experiment was successfully repeated after two months. Its superior operation is explained through simulation. For the first time convincing statistical evidence of sub-60mV/dec SS is presented. More than 30% of the devices show sub-60mV/dec SS after systemic data quality checks that screen out unreliable data.

Original language	English
Title of host publication	2010 Symposium on VLSI Technology, VLSIT 2010
Pages	121-122
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2010.5556195
Publication status	Published - 2010
Event	2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States Duration: 2010 Jun 15 → 2010 Jun 17

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2010 Symposium on VLSI Technology, VLSIT 2010
Country/Territory	United States
City	Honolulu, HI
Period	10/6/15 → 10/6/17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/VLSIT.2010.5556195

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Jeon, K., Loh, W. Y., Patel, P., Kang, C. Y., Oh, J., Bowonder, A., Park, C., Park, C. S., Smith, C., Majhi, P., Tseng, H. H., Jammy, R., Liu, T. J. K., & Hu, C. (2010). Si tunnel transistors with a novel silicided source and 46mV/dec swing. In 2010 Symposium on VLSI Technology, VLSIT 2010 (pp. 121-122). [5556195] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2010.5556195

Jeon, Kanghoon ; Loh, Wei Yip ; Patel, Pratik ; Kang, Chang Yong ; Oh, Jungwoo ; Bowonder, Anupama ; Park, Chanro ; Park, C. S. ; Smith, Casey ; Majhi, Prashant ; Tseng, Hsing Huang ; Jammy, Raj ; Liu, Tsu Jae King ; Hu, Chenming. / Si tunnel transistors with a novel silicided source and 46mV/dec swing. 2010 Symposium on VLSI Technology, VLSIT 2010. 2010. pp. 121-122 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{5504fc16e0ce42e786e7624f2255e016,

title = "Si tunnel transistors with a novel silicided source and 46mV/dec swing",

abstract = "We report a novel tunneling field effect transistor (TFET) fabricated with a high-k/metal gate stack and using nickel silicide to create a special field-enhancing geometry and a high dopant density by dopant segregation. It produces steep subthreshold swing (SS) of 46mV/dec and high I ON/IOFF ratio (∼108) and the experiment was successfully repeated after two months. Its superior operation is explained through simulation. For the first time convincing statistical evidence of sub-60mV/dec SS is presented. More than 30% of the devices show sub-60mV/dec SS after systemic data quality checks that screen out unreliable data.",

author = "Kanghoon Jeon and Loh, {Wei Yip} and Pratik Patel and Kang, {Chang Yong} and Jungwoo Oh and Anupama Bowonder and Chanro Park and Park, {C. S.} and Casey Smith and Prashant Majhi and Tseng, {Hsing Huang} and Raj Jammy and Liu, {Tsu Jae King} and Chenming Hu",

year = "2010",

doi = "10.1109/VLSIT.2010.5556195",

language = "English",

isbn = "9781424476374",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "121--122",

booktitle = "2010 Symposium on VLSI Technology, VLSIT 2010",

note = "2010 Symposium on VLSI Technology, VLSIT 2010 ; Conference date: 15-06-2010 Through 17-06-2010",

}

Jeon, K, Loh, WY, Patel, P, Kang, CY, Oh, J, Bowonder, A, Park, C, Park, CS, Smith, C, Majhi, P, Tseng, HH, Jammy, R, Liu, TJK & Hu, C 2010, Si tunnel transistors with a novel silicided source and 46mV/dec swing. in 2010 Symposium on VLSI Technology, VLSIT 2010., 5556195, Digest of Technical Papers - Symposium on VLSI Technology, pp. 121-122, 2010 Symposium on VLSI Technology, VLSIT 2010, Honolulu, HI, United States, 10/6/15. https://doi.org/10.1109/VLSIT.2010.5556195

Si tunnel transistors with a novel silicided source and 46mV/dec swing. / Jeon, Kanghoon; Loh, Wei Yip; Patel, Pratik; Kang, Chang Yong; Oh, Jungwoo; Bowonder, Anupama; Park, Chanro; Park, C. S.; Smith, Casey; Majhi, Prashant; Tseng, Hsing Huang; Jammy, Raj; Liu, Tsu Jae King; Hu, Chenming.

2010 Symposium on VLSI Technology, VLSIT 2010. 2010. p. 121-122 5556195 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Si tunnel transistors with a novel silicided source and 46mV/dec swing

AU - Jeon, Kanghoon

AU - Loh, Wei Yip

AU - Patel, Pratik

AU - Kang, Chang Yong

AU - Oh, Jungwoo

AU - Bowonder, Anupama

AU - Park, Chanro

AU - Park, C. S.

AU - Smith, Casey

AU - Majhi, Prashant

AU - Tseng, Hsing Huang

AU - Jammy, Raj

AU - Liu, Tsu Jae King

AU - Hu, Chenming

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N2 - We report a novel tunneling field effect transistor (TFET) fabricated with a high-k/metal gate stack and using nickel silicide to create a special field-enhancing geometry and a high dopant density by dopant segregation. It produces steep subthreshold swing (SS) of 46mV/dec and high I ON/IOFF ratio (∼108) and the experiment was successfully repeated after two months. Its superior operation is explained through simulation. For the first time convincing statistical evidence of sub-60mV/dec SS is presented. More than 30% of the devices show sub-60mV/dec SS after systemic data quality checks that screen out unreliable data.

AB - We report a novel tunneling field effect transistor (TFET) fabricated with a high-k/metal gate stack and using nickel silicide to create a special field-enhancing geometry and a high dopant density by dopant segregation. It produces steep subthreshold swing (SS) of 46mV/dec and high I ON/IOFF ratio (∼108) and the experiment was successfully repeated after two months. Its superior operation is explained through simulation. For the first time convincing statistical evidence of sub-60mV/dec SS is presented. More than 30% of the devices show sub-60mV/dec SS after systemic data quality checks that screen out unreliable data.

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BT - 2010 Symposium on VLSI Technology, VLSIT 2010

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ER -

Si tunnel transistors with a novel silicided source and 46mV/dec swing

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