@inproceedings{5504fc16e0ce42e786e7624f2255e016,
title = "Si tunnel transistors with a novel silicided source and 46mV/dec swing",
abstract = "We report a novel tunneling field effect transistor (TFET) fabricated with a high-k/metal gate stack and using nickel silicide to create a special field-enhancing geometry and a high dopant density by dopant segregation. It produces steep subthreshold swing (SS) of 46mV/dec and high I ON/IOFF ratio (∼108) and the experiment was successfully repeated after two months. Its superior operation is explained through simulation. For the first time convincing statistical evidence of sub-60mV/dec SS is presented. More than 30% of the devices show sub-60mV/dec SS after systemic data quality checks that screen out unreliable data.",
author = "Kanghoon Jeon and Loh, {Wei Yip} and Pratik Patel and Kang, {Chang Yong} and Jungwoo Oh and Anupama Bowonder and Chanro Park and Park, {C. S.} and Casey Smith and Prashant Majhi and Tseng, {Hsing Huang} and Raj Jammy and Liu, {Tsu Jae King} and Chenming Hu",
year = "2010",
doi = "10.1109/VLSIT.2010.5556195",
language = "English",
isbn = "9781424476374",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "121--122",
booktitle = "2010 Symposium on VLSI Technology, VLSIT 2010",
note = "2010 Symposium on VLSI Technology, VLSIT 2010 ; Conference date: 15-06-2010 Through 17-06-2010",
}