Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

H. Kim, G. Glass, T. Spila, N. Taylor, S. Y. Park, J. R. Abelson, J. E. Greene

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Abstract

B-doped Si(001) films, with concentrations CB up to 1.7 × 1022 cm-3, were grown by gas-source molecular-beam epitaxy from Si2H6 and B2H6 at Ts = 500-800°C. D2 temperature-programed desorption (TPD) spectra were then used to determine B coverages θB as a function of CB and Ts. In these measurements, as-deposited films were flash heated to desorb surface hydrogen, cooled, and exposed to atomic deuterium until saturation coverage. Strong B surface segregation was observed with surface-to-bulk B concentration ratios ranging up to 1200. TPD spectra exhibited β2 and β1 peaks associated with dideuteride and monodeuteride desorption as well as lower-temperature B-induced peaks β*2 and β*1. Increasing θB increased the area under β*2 and β*1 at the expense of β2 and β1 and decreased the total D coverage θD. The TPD results were used to determine the B segregation enthalpy, -0.53 eV, and to explain and model the effects of high B coverages on Si(001) growth kinetics. Film deposition rates R increase by ≥50% with increasing CB≳1 × 1019 cm-3 at Ts≤550°C, due primarily to increased H desorption rates from B-backbonded Si adatoms, and decrease by corresponding amounts at Ts≥600°C due to decreased adsorption site densities. At Ts≥700°C, high B coverages also induce {113} facetting.

Original languageEnglish
Pages (from-to)2288-2297
Number of pages10
JournalJournal of Applied Physics
Volume82
Issue number5
DOIs
Publication statusPublished - 1997 Sep 1

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boron
molecular beam epitaxy
desorption
kinetics
gases
adatoms
temperature
flash
deuterium
enthalpy
saturation
adsorption
hydrogen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, H. ; Glass, G. ; Spila, T. ; Taylor, N. ; Park, S. Y. ; Abelson, J. R. ; Greene, J. E. / Si(001):B gas-source molecular-beam epitaxy : Boron surface segregation and its effect on film growth kinetics. In: Journal of Applied Physics. 1997 ; Vol. 82, No. 5. pp. 2288-2297.
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Si(001):B gas-source molecular-beam epitaxy : Boron surface segregation and its effect on film growth kinetics. / Kim, H.; Glass, G.; Spila, T.; Taylor, N.; Park, S. Y.; Abelson, J. R.; Greene, J. E.

In: Journal of Applied Physics, Vol. 82, No. 5, 01.09.1997, p. 2288-2297.

Research output: Contribution to journalArticle

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T1 - Si(001):B gas-source molecular-beam epitaxy

T2 - Boron surface segregation and its effect on film growth kinetics

AU - Kim, H.

AU - Glass, G.

AU - Spila, T.

AU - Taylor, N.

AU - Park, S. Y.

AU - Abelson, J. R.

AU - Greene, J. E.

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AB - B-doped Si(001) films, with concentrations CB up to 1.7 × 1022 cm-3, were grown by gas-source molecular-beam epitaxy from Si2H6 and B2H6 at Ts = 500-800°C. D2 temperature-programed desorption (TPD) spectra were then used to determine B coverages θB as a function of CB and Ts. In these measurements, as-deposited films were flash heated to desorb surface hydrogen, cooled, and exposed to atomic deuterium until saturation coverage. Strong B surface segregation was observed with surface-to-bulk B concentration ratios ranging up to 1200. TPD spectra exhibited β2 and β1 peaks associated with dideuteride and monodeuteride desorption as well as lower-temperature B-induced peaks β*2 and β*1. Increasing θB increased the area under β*2 and β*1 at the expense of β2 and β1 and decreased the total D coverage θD. The TPD results were used to determine the B segregation enthalpy, -0.53 eV, and to explain and model the effects of high B coverages on Si(001) growth kinetics. Film deposition rates R increase by ≥50% with increasing CB≳1 × 1019 cm-3 at Ts≤550°C, due primarily to increased H desorption rates from B-backbonded Si adatoms, and decrease by corresponding amounts at Ts≥600°C due to decreased adsorption site densities. At Ts≥700°C, high B coverages also induce {113} facetting.

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