Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics

N. Taylor, Hyungjun Kim, P. Desjardins, Y. L. Foo, J. E. Greene

Research output: Contribution to journalArticle

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Abstract

The growth rates RSi of Si layers deposited on Si(011)"16×2" by gas-source molecular beam epitaxy from Si2H6 were determined as a function of temperature Ts (400-975 °C) and Si2H6 flux JSi2H6(5.0×1015-9.0×1016cm -2s-1). RSi ranges from 0.0015 μmh-1 at Ts=400°C to 0.415 μm h-1 at Ts=975 °C with JSi2H6=2.2×1016cm-2s-1. In the surface-reaction-limited regime at Ts <725 °C, RSi initially exhibits an exponential decrease with 1/Ts, then decreases at a slower rate at Ts≤550°C as an additional deposition pathway becomes operative. In the impingement-flux-limited regime. 725≤Ts≤900°C, RSi is independent of Ts but increases linearly with JSi2H6. At Ts>900°C, RSi(Ts) increases with Ts due to surface roughening. Overall, R·Si(JSi2H6,Ts) is well described at Ts≤900°C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si2H6 onto dangling bonds followed by fast surface dissociation steps and second-order H2 desorption from the surface monohydride phase; and (2) Si2H6 insertion into Si-H surface bonds followed by second-order desorption of SiH4.

Original languageEnglish
Pages (from-to)2853-2855
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number20
DOIs
Publication statusPublished - 2000 May 15

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molecular beam epitaxy
kinetics
gases
desorption
chemisorption
surface reactions
insertion
dissociation
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Taylor, N., Kim, H., Desjardins, P., Foo, Y. L., & Greene, J. E. (2000). Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics. Applied Physics Letters, 76(20), 2853-2855. https://doi.org/10.1063/1.126495
Taylor, N. ; Kim, Hyungjun ; Desjardins, P. ; Foo, Y. L. ; Greene, J. E. / Si(011)16×2 gas-source molecular beam epitaxy : Growth kinetics. In: Applied Physics Letters. 2000 ; Vol. 76, No. 20. pp. 2853-2855.
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Taylor, N, Kim, H, Desjardins, P, Foo, YL & Greene, JE 2000, 'Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics', Applied Physics Letters, vol. 76, no. 20, pp. 2853-2855. https://doi.org/10.1063/1.126495

Si(011)16×2 gas-source molecular beam epitaxy : Growth kinetics. / Taylor, N.; Kim, Hyungjun; Desjardins, P.; Foo, Y. L.; Greene, J. E.

In: Applied Physics Letters, Vol. 76, No. 20, 15.05.2000, p. 2853-2855.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Si(011)16×2 gas-source molecular beam epitaxy

T2 - Growth kinetics

AU - Taylor, N.

AU - Kim, Hyungjun

AU - Desjardins, P.

AU - Foo, Y. L.

AU - Greene, J. E.

PY - 2000/5/15

Y1 - 2000/5/15

N2 - The growth rates RSi of Si layers deposited on Si(011)"16×2" by gas-source molecular beam epitaxy from Si2H6 were determined as a function of temperature Ts (400-975 °C) and Si2H6 flux JSi2H6(5.0×1015-9.0×1016cm -2s-1). RSi ranges from 0.0015 μmh-1 at Ts=400°C to 0.415 μm h-1 at Ts=975 °C with JSi2H6=2.2×1016cm-2s-1. In the surface-reaction-limited regime at Ts <725 °C, RSi initially exhibits an exponential decrease with 1/Ts, then decreases at a slower rate at Ts≤550°C as an additional deposition pathway becomes operative. In the impingement-flux-limited regime. 725≤Ts≤900°C, RSi is independent of Ts but increases linearly with JSi2H6. At Ts>900°C, RSi(Ts) increases with Ts due to surface roughening. Overall, R·Si(JSi2H6,Ts) is well described at Ts≤900°C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si2H6 onto dangling bonds followed by fast surface dissociation steps and second-order H2 desorption from the surface monohydride phase; and (2) Si2H6 insertion into Si-H surface bonds followed by second-order desorption of SiH4.

AB - The growth rates RSi of Si layers deposited on Si(011)"16×2" by gas-source molecular beam epitaxy from Si2H6 were determined as a function of temperature Ts (400-975 °C) and Si2H6 flux JSi2H6(5.0×1015-9.0×1016cm -2s-1). RSi ranges from 0.0015 μmh-1 at Ts=400°C to 0.415 μm h-1 at Ts=975 °C with JSi2H6=2.2×1016cm-2s-1. In the surface-reaction-limited regime at Ts <725 °C, RSi initially exhibits an exponential decrease with 1/Ts, then decreases at a slower rate at Ts≤550°C as an additional deposition pathway becomes operative. In the impingement-flux-limited regime. 725≤Ts≤900°C, RSi is independent of Ts but increases linearly with JSi2H6. At Ts>900°C, RSi(Ts) increases with Ts due to surface roughening. Overall, R·Si(JSi2H6,Ts) is well described at Ts≤900°C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si2H6 onto dangling bonds followed by fast surface dissociation steps and second-order H2 desorption from the surface monohydride phase; and (2) Si2H6 insertion into Si-H surface bonds followed by second-order desorption of SiH4.

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