Abstract
The growth rates RSi of Si layers deposited on Si(011)"16×2" by gas-source molecular beam epitaxy from Si2H6 were determined as a function of temperature Ts (400-975 °C) and Si2H6 flux JSi2H6(5.0×1015-9.0×1016cm -2s-1). RSi ranges from 0.0015 μmh-1 at Ts=400°C to 0.415 μm h-1 at Ts=975 °C with JSi2H6=2.2×1016cm-2s-1. In the surface-reaction-limited regime at Ts <725 °C, RSi initially exhibits an exponential decrease with 1/Ts, then decreases at a slower rate at Ts≤550°C as an additional deposition pathway becomes operative. In the impingement-flux-limited regime. 725≤Ts≤900°C, RSi is independent of Ts but increases linearly with JSi2H6. At Ts>900°C, RSi(Ts) increases with Ts due to surface roughening. Overall, R·Si(JSi2H6,Ts) is well described at Ts≤900°C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si2H6 onto dangling bonds followed by fast surface dissociation steps and second-order H2 desorption from the surface monohydride phase; and (2) Si2H6 insertion into Si-H surface bonds followed by second-order desorption of SiH4.
| Original language | English |
|---|---|
| Pages (from-to) | 2853-2855 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 76 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 2000 May 15 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Si(011)16×2 gas-source molecular beam epitaxy : Growth kinetics. / Taylor, N.; Kim, Hyungjun; Desjardins, P.; Foo, Y. L.; Greene, J. E.
In: Applied Physics Letters, Vol. 76, No. 20, 15.05.2000, p. 2853-2855.Research output: Contribution to journal › Article
TY - JOUR
T1 - Si(011)16×2 gas-source molecular beam epitaxy
T2 - Growth kinetics
AU - Taylor, N.
AU - Kim, Hyungjun
AU - Desjardins, P.
AU - Foo, Y. L.
AU - Greene, J. E.
PY - 2000/5/15
Y1 - 2000/5/15
N2 - The growth rates RSi of Si layers deposited on Si(011)"16×2" by gas-source molecular beam epitaxy from Si2H6 were determined as a function of temperature Ts (400-975 °C) and Si2H6 flux JSi2H6(5.0×1015-9.0×1016cm -2s-1). RSi ranges from 0.0015 μmh-1 at Ts=400°C to 0.415 μm h-1 at Ts=975 °C with JSi2H6=2.2×1016cm-2s-1. In the surface-reaction-limited regime at Ts <725 °C, RSi initially exhibits an exponential decrease with 1/Ts, then decreases at a slower rate at Ts≤550°C as an additional deposition pathway becomes operative. In the impingement-flux-limited regime. 725≤Ts≤900°C, RSi is independent of Ts but increases linearly with JSi2H6. At Ts>900°C, RSi(Ts) increases with Ts due to surface roughening. Overall, R·Si(JSi2H6,Ts) is well described at Ts≤900°C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si2H6 onto dangling bonds followed by fast surface dissociation steps and second-order H2 desorption from the surface monohydride phase; and (2) Si2H6 insertion into Si-H surface bonds followed by second-order desorption of SiH4.
AB - The growth rates RSi of Si layers deposited on Si(011)"16×2" by gas-source molecular beam epitaxy from Si2H6 were determined as a function of temperature Ts (400-975 °C) and Si2H6 flux JSi2H6(5.0×1015-9.0×1016cm -2s-1). RSi ranges from 0.0015 μmh-1 at Ts=400°C to 0.415 μm h-1 at Ts=975 °C with JSi2H6=2.2×1016cm-2s-1. In the surface-reaction-limited regime at Ts <725 °C, RSi initially exhibits an exponential decrease with 1/Ts, then decreases at a slower rate at Ts≤550°C as an additional deposition pathway becomes operative. In the impingement-flux-limited regime. 725≤Ts≤900°C, RSi is independent of Ts but increases linearly with JSi2H6. At Ts>900°C, RSi(Ts) increases with Ts due to surface roughening. Overall, R·Si(JSi2H6,Ts) is well described at Ts≤900°C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si2H6 onto dangling bonds followed by fast surface dissociation steps and second-order H2 desorption from the surface monohydride phase; and (2) Si2H6 insertion into Si-H surface bonds followed by second-order desorption of SiH4.
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U2 - 10.1063/1.126495
DO - 10.1063/1.126495
M3 - Article
VL - 76
SP - 2853
EP - 2855
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 20
ER -