Si(113) hydrogen desorption kinetics

A temperature programmed desorption study

Hyungjun Kim, T. Spila, J. E. Greene

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Hydrogen desorption kinetics from Si(113) surfaces were investigated using D2 temperature programmed desorption (TPD). For this purpose, clean Si(113)3 × 2 wafers were exposed to atomic deuterium at 200°C for times sufficient to provide D coverages θD ranging up to saturation, θD,sat. Corresponding low-energy electron diffraction patterns transform from 3 × 2 to 3 × 1-D to 1 × 1 with increasing θD. TPD spectra from Si(113) surfaces with θD = θD,sat consist of a first-order desorption feature (β1) centered at 515°C and a second-order desorption peak (β2) at 405°C. β2 is assigned to D2 desorption, with an activation energy of 2.16 eV, from a dideuteride surface phase while β1 is due to desorption from monodeuteride. The β1 peak consists of two components: β1,t which arises due to first order, as a result of π-bond induced ordering, D2 desorption from tetramers and β1,ad which is due to second-order D2 desorption from adatoms and second-layer surface atoms. Both β1 components have activation energies of 2.58 eV. Following monodeuteride desorption, the clean Si(113) surface again exhibits a 3 × 2 reconstruction. The TPD results are explained based upon previously proposed models for the Si(113)3 × 2 reconstructed surface.

Original languageEnglish
JournalSurface Science
Volume490
Issue number1-2
DOIs
Publication statusPublished - 2001 Sep 1

Fingerprint

Temperature programmed desorption
Hydrogen
Desorption
desorption
Kinetics
kinetics
hydrogen
temperature
Activation energy
Adatoms
Low energy electron diffraction
Deuterium
activation energy
Diffraction patterns
adatoms
Atoms
deuterium
surface layers
diffraction patterns
electron diffraction

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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abstract = "Hydrogen desorption kinetics from Si(113) surfaces were investigated using D2 temperature programmed desorption (TPD). For this purpose, clean Si(113)3 × 2 wafers were exposed to atomic deuterium at 200°C for times sufficient to provide D coverages θD ranging up to saturation, θD,sat. Corresponding low-energy electron diffraction patterns transform from 3 × 2 to 3 × 1-D to 1 × 1 with increasing θD. TPD spectra from Si(113) surfaces with θD = θD,sat consist of a first-order desorption feature (β1) centered at 515°C and a second-order desorption peak (β2) at 405°C. β2 is assigned to D2 desorption, with an activation energy of 2.16 eV, from a dideuteride surface phase while β1 is due to desorption from monodeuteride. The β1 peak consists of two components: β1,t which arises due to first order, as a result of π-bond induced ordering, D2 desorption from tetramers and β1,ad which is due to second-order D2 desorption from adatoms and second-layer surface atoms. Both β1 components have activation energies of 2.58 eV. Following monodeuteride desorption, the clean Si(113) surface again exhibits a 3 × 2 reconstruction. The TPD results are explained based upon previously proposed models for the Si(113)3 × 2 reconstructed surface.",
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Si(113) hydrogen desorption kinetics : A temperature programmed desorption study. / Kim, Hyungjun; Spila, T.; Greene, J. E.

In: Surface Science, Vol. 490, No. 1-2, 01.09.2001.

Research output: Contribution to journalArticle

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