Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit

Yoshito Okuno, Sanpon Vantasin, In Sang Yang, Jangyup Son, Jongill Hong, Yoshito Yannick Tanaka, Yasushi Nakata, Yukihiro Ozaki, Nobuyuki Naka

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Nanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 108Acm2), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm-1, which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C-C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.

Original languageEnglish
Article number163110
JournalApplied Physics Letters
Volume108
Issue number16
DOIs
Publication statusPublished - 2016 Apr 18

Fingerprint

electrical faults
graphene
high current
current density
breakdown
electronics
phonons
Raman spectra

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Okuno, Yoshito ; Vantasin, Sanpon ; Yang, In Sang ; Son, Jangyup ; Hong, Jongill ; Tanaka, Yoshito Yannick ; Nakata, Yasushi ; Ozaki, Yukihiro ; Naka, Nobuyuki. / Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit. In: Applied Physics Letters. 2016 ; Vol. 108, No. 16.
@article{29cc10bd9fb943b596ac07561e976136,
title = "Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit",
abstract = "Nanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 108Acm2), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm-1, which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C-C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.",
author = "Yoshito Okuno and Sanpon Vantasin and Yang, {In Sang} and Jangyup Son and Jongill Hong and Tanaka, {Yoshito Yannick} and Yasushi Nakata and Yukihiro Ozaki and Nobuyuki Naka",
year = "2016",
month = "4",
day = "18",
doi = "10.1063/1.4947559",
language = "English",
volume = "108",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

Okuno, Y, Vantasin, S, Yang, IS, Son, J, Hong, J, Tanaka, YY, Nakata, Y, Ozaki, Y & Naka, N 2016, 'Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit', Applied Physics Letters, vol. 108, no. 16, 163110. https://doi.org/10.1063/1.4947559

Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit. / Okuno, Yoshito; Vantasin, Sanpon; Yang, In Sang; Son, Jangyup; Hong, Jongill; Tanaka, Yoshito Yannick; Nakata, Yasushi; Ozaki, Yukihiro; Naka, Nobuyuki.

In: Applied Physics Letters, Vol. 108, No. 16, 163110, 18.04.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit

AU - Okuno, Yoshito

AU - Vantasin, Sanpon

AU - Yang, In Sang

AU - Son, Jangyup

AU - Hong, Jongill

AU - Tanaka, Yoshito Yannick

AU - Nakata, Yasushi

AU - Ozaki, Yukihiro

AU - Naka, Nobuyuki

PY - 2016/4/18

Y1 - 2016/4/18

N2 - Nanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 108Acm2), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm-1, which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C-C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.

AB - Nanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 108Acm2), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm-1, which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C-C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.

UR - http://www.scopus.com/inward/record.url?scp=84967332903&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84967332903&partnerID=8YFLogxK

U2 - 10.1063/1.4947559

DO - 10.1063/1.4947559

M3 - Article

AN - SCOPUS:84967332903

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 163110

ER -