Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit

Yoshito Okuno, Sanpon Vantasin, In Sang Yang, Jangyup Son, Jongill Hong, Yoshito Yannick Tanaka, Yasushi Nakata, Yukihiro Ozaki, Nobuyuki Naka

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3 Citations (Scopus)

Abstract

Nanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 108Acm2), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm-1, which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C-C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.

Original languageEnglish
Article number163110
JournalApplied Physics Letters
Volume108
Issue number16
DOIs
Publication statusPublished - 2016 Apr 18

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Okuno, Y., Vantasin, S., Yang, I. S., Son, J., Hong, J., Tanaka, Y. Y., Nakata, Y., Ozaki, Y., & Naka, N. (2016). Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit. Applied Physics Letters, 108(16), [163110]. https://doi.org/10.1063/1.4947559