SiGe CMOS on (110) channel orientation with mobility boosters

Surface orientation, channel directions, and uniaxial strain

Jungwoo Oh, S. H. Lee, K. S. Min, J. Huang, B. G. Min, B. Sassman, K. Jeon, W. Y. Loh, J. Barnett, I. Ok, C. Y. Kang, C. Smith, Dae Hong Ko, P. D. Kirsch, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

We report a comprehensive study of surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS. On a (110) surface, SiGe nMOS demonstrates a higher electron mobility than Si (110) nMOS. The hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. Results obtained in this work advance the integration technique of high mobility CMOS on a single SiGe (110)<110> channel orientation to enhance overall performance without the process complexity associated with hybrid channel CMOS approaches.

Original languageEnglish
Title of host publication2010 Symposium on VLSI Technology, VLSIT 2010
Pages39-40
Number of pages2
DOIs
Publication statusPublished - 2010 Oct 19
Event2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States
Duration: 2010 Jun 152010 Jun 17

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2010 Symposium on VLSI Technology, VLSIT 2010
CountryUnited States
CityHonolulu, HI
Period10/6/1510/6/17

Fingerprint

Hole mobility
Electron mobility

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Oh, J., Lee, S. H., Min, K. S., Huang, J., Min, B. G., Sassman, B., ... Jammy, R. (2010). SiGe CMOS on (110) channel orientation with mobility boosters: Surface orientation, channel directions, and uniaxial strain. In 2010 Symposium on VLSI Technology, VLSIT 2010 (pp. 39-40). [5556127] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2010.5556127
Oh, Jungwoo ; Lee, S. H. ; Min, K. S. ; Huang, J. ; Min, B. G. ; Sassman, B. ; Jeon, K. ; Loh, W. Y. ; Barnett, J. ; Ok, I. ; Kang, C. Y. ; Smith, C. ; Ko, Dae Hong ; Kirsch, P. D. ; Jammy, R. / SiGe CMOS on (110) channel orientation with mobility boosters : Surface orientation, channel directions, and uniaxial strain. 2010 Symposium on VLSI Technology, VLSIT 2010. 2010. pp. 39-40 (Digest of Technical Papers - Symposium on VLSI Technology).
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title = "SiGe CMOS on (110) channel orientation with mobility boosters: Surface orientation, channel directions, and uniaxial strain",
abstract = "We report a comprehensive study of surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS. On a (110) surface, SiGe nMOS demonstrates a higher electron mobility than Si (110) nMOS. The hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. Results obtained in this work advance the integration technique of high mobility CMOS on a single SiGe (110)<110> channel orientation to enhance overall performance without the process complexity associated with hybrid channel CMOS approaches.",
author = "Jungwoo Oh and Lee, {S. H.} and Min, {K. S.} and J. Huang and Min, {B. G.} and B. Sassman and K. Jeon and Loh, {W. Y.} and J. Barnett and I. Ok and Kang, {C. Y.} and C. Smith and Ko, {Dae Hong} and Kirsch, {P. D.} and R. Jammy",
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Oh, J, Lee, SH, Min, KS, Huang, J, Min, BG, Sassman, B, Jeon, K, Loh, WY, Barnett, J, Ok, I, Kang, CY, Smith, C, Ko, DH, Kirsch, PD & Jammy, R 2010, SiGe CMOS on (110) channel orientation with mobility boosters: Surface orientation, channel directions, and uniaxial strain. in 2010 Symposium on VLSI Technology, VLSIT 2010., 5556127, Digest of Technical Papers - Symposium on VLSI Technology, pp. 39-40, 2010 Symposium on VLSI Technology, VLSIT 2010, Honolulu, HI, United States, 10/6/15. https://doi.org/10.1109/VLSIT.2010.5556127

SiGe CMOS on (110) channel orientation with mobility boosters : Surface orientation, channel directions, and uniaxial strain. / Oh, Jungwoo; Lee, S. H.; Min, K. S.; Huang, J.; Min, B. G.; Sassman, B.; Jeon, K.; Loh, W. Y.; Barnett, J.; Ok, I.; Kang, C. Y.; Smith, C.; Ko, Dae Hong; Kirsch, P. D.; Jammy, R.

2010 Symposium on VLSI Technology, VLSIT 2010. 2010. p. 39-40 5556127 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - SiGe CMOS on (110) channel orientation with mobility boosters

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AU - Lee, S. H.

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AU - Huang, J.

AU - Min, B. G.

AU - Sassman, B.

AU - Jeon, K.

AU - Loh, W. Y.

AU - Barnett, J.

AU - Ok, I.

AU - Kang, C. Y.

AU - Smith, C.

AU - Ko, Dae Hong

AU - Kirsch, P. D.

AU - Jammy, R.

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N2 - We report a comprehensive study of surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS. On a (110) surface, SiGe nMOS demonstrates a higher electron mobility than Si (110) nMOS. The hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. Results obtained in this work advance the integration technique of high mobility CMOS on a single SiGe (110)<110> channel orientation to enhance overall performance without the process complexity associated with hybrid channel CMOS approaches.

AB - We report a comprehensive study of surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS. On a (110) surface, SiGe nMOS demonstrates a higher electron mobility than Si (110) nMOS. The hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. Results obtained in this work advance the integration technique of high mobility CMOS on a single SiGe (110)<110> channel orientation to enhance overall performance without the process complexity associated with hybrid channel CMOS approaches.

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BT - 2010 Symposium on VLSI Technology, VLSIT 2010

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Oh J, Lee SH, Min KS, Huang J, Min BG, Sassman B et al. SiGe CMOS on (110) channel orientation with mobility boosters: Surface orientation, channel directions, and uniaxial strain. In 2010 Symposium on VLSI Technology, VLSIT 2010. 2010. p. 39-40. 5556127. (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2010.5556127