SiGe CMOS on (110) channel orientation with mobility boosters: Surface orientation, channel directions, and uniaxial strain

J. Oh, S. H. Lee, K. S. Min, J. Huang, B. G. Min, B. Sassman, K. Jeon, W. Y. Loh, J. Barnett, I. Ok, C. Y. Kang, C. Smith, D. H. Ko, P. D. Kirsch, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

We report a comprehensive study of surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS. On a (110) surface, SiGe nMOS demonstrates a higher electron mobility than Si (110) nMOS. The hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. Results obtained in this work advance the integration technique of high mobility CMOS on a single SiGe (110)<110> channel orientation to enhance overall performance without the process complexity associated with hybrid channel CMOS approaches.

Original languageEnglish
Title of host publication2010 Symposium on VLSI Technology, VLSIT 2010
Pages39-40
Number of pages2
DOIs
Publication statusPublished - 2010 Oct 19
Event2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States
Duration: 2010 Jun 152010 Jun 17

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2010 Symposium on VLSI Technology, VLSIT 2010
CountryUnited States
CityHonolulu, HI
Period10/6/1510/6/17

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Oh, J., Lee, S. H., Min, K. S., Huang, J., Min, B. G., Sassman, B., Jeon, K., Loh, W. Y., Barnett, J., Ok, I., Kang, C. Y., Smith, C., Ko, D. H., Kirsch, P. D., & Jammy, R. (2010). SiGe CMOS on (110) channel orientation with mobility boosters: Surface orientation, channel directions, and uniaxial strain. In 2010 Symposium on VLSI Technology, VLSIT 2010 (pp. 39-40). [5556127] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2010.5556127