Ordered SiGe nanostructures including nanodots (NDs) and nanowires (NWs) were fabricated via selective epitaxial growth (SEG) of SiGe using ultrahigh vacuum chemical vapour deposition (UHV-CVD) on Si openings fabricated using self-assembled nanotemplates of anodic anluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-block-polymethylmethacrylate (PS-b-PMMA), exhibiting hexagonally arranged nanoholes. SiGe SEG was processed through repeating the unit cycle composed of two separated steps of SiGe growth using disilane (Si2H6) and Germane (GeH4) and chlorine (Cl2 exposure. Cl2 was used to improve the selectivity of SiGe SEG between the Si openings and the oxide area. Ordered SiGe NDs and NWs were fabricated through SiGe SEG of 20 cycles and 400 cycles on AAO/Si, respectively. In addition, ordered SiGe NDs were obtained via SiGe SEG of 20 cycles on SiO2 template, fabricated through pattern transfer of nanoholes of PS-b-PMMA to SiO2/Si. SiGe nanostructure fabrication using both AAO and PS-b-PMMA showed good replication of the nanohole size of the nanotemplates.
|Journal||IOP Conference Series: Materials Science and Engineering|
|Publication status||Published - 2009|
|Event||European Materials Research Society (E-MRS) 2009 Spring Meeting - Strasbourg, France|
Duration: 2009 Jun 8 → 2009 Jun 12
All Science Journal Classification (ASJC) codes
- Materials Science(all)