SiGe nanostructure fabrication through selective epitaxial growth using self-assembled nanotemplates

Sang Joon Park, In Chan Hwang, Heung Soon Lee, Jong Yeog Son, Hyungjun Kim

Research output: Contribution to journalConference article

Abstract

Ordered SiGe nanostructures including nanodots (NDs) and nanowires (NWs) were fabricated via selective epitaxial growth (SEG) of SiGe using ultrahigh vacuum chemical vapour deposition (UHV-CVD) on Si openings fabricated using self-assembled nanotemplates of anodic anluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-block-polymethylmethacrylate (PS-b-PMMA), exhibiting hexagonally arranged nanoholes. SiGe SEG was processed through repeating the unit cycle composed of two separated steps of SiGe growth using disilane (Si2H6) and Germane (GeH4) and chlorine (Cl2 exposure. Cl2 was used to improve the selectivity of SiGe SEG between the Si openings and the oxide area. Ordered SiGe NDs and NWs were fabricated through SiGe SEG of 20 cycles and 400 cycles on AAO/Si, respectively. In addition, ordered SiGe NDs were obtained via SiGe SEG of 20 cycles on SiO2 template, fabricated through pattern transfer of nanoholes of PS-b-PMMA to SiO2/Si. SiGe nanostructure fabrication using both AAO and PS-b-PMMA showed good replication of the nanohole size of the nanotemplates.

Original languageEnglish
Article number012019
JournalIOP Conference Series: Materials Science and Engineering
Volume6
DOIs
Publication statusPublished - 2009 Dec 1
EventEuropean Materials Research Society (E-MRS) 2009 Spring Meeting - Strasbourg, France
Duration: 2009 Jun 82009 Jun 12

Fingerprint

Epitaxial growth
Nanostructures
Oxides
Polystyrenes
Fabrication
Polymethyl Methacrylate
Nanowires
Chlorine
Ultrahigh vacuum
Block copolymers
Chemical vapor deposition

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

@article{0fa548349d824650b1bb1601dcca08a2,
title = "SiGe nanostructure fabrication through selective epitaxial growth using self-assembled nanotemplates",
abstract = "Ordered SiGe nanostructures including nanodots (NDs) and nanowires (NWs) were fabricated via selective epitaxial growth (SEG) of SiGe using ultrahigh vacuum chemical vapour deposition (UHV-CVD) on Si openings fabricated using self-assembled nanotemplates of anodic anluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-block-polymethylmethacrylate (PS-b-PMMA), exhibiting hexagonally arranged nanoholes. SiGe SEG was processed through repeating the unit cycle composed of two separated steps of SiGe growth using disilane (Si2H6) and Germane (GeH4) and chlorine (Cl2 exposure. Cl2 was used to improve the selectivity of SiGe SEG between the Si openings and the oxide area. Ordered SiGe NDs and NWs were fabricated through SiGe SEG of 20 cycles and 400 cycles on AAO/Si, respectively. In addition, ordered SiGe NDs were obtained via SiGe SEG of 20 cycles on SiO2 template, fabricated through pattern transfer of nanoholes of PS-b-PMMA to SiO2/Si. SiGe nanostructure fabrication using both AAO and PS-b-PMMA showed good replication of the nanohole size of the nanotemplates.",
author = "Park, {Sang Joon} and Hwang, {In Chan} and Lee, {Heung Soon} and Son, {Jong Yeog} and Hyungjun Kim",
year = "2009",
month = "12",
day = "1",
doi = "10.1088/1757-899X/6/1/012019",
language = "English",
volume = "6",
journal = "IOP Conference Series: Materials Science and Engineering",
issn = "1757-8981",
publisher = "IOP Publishing Ltd.",

}

SiGe nanostructure fabrication through selective epitaxial growth using self-assembled nanotemplates. / Park, Sang Joon; Hwang, In Chan; Lee, Heung Soon; Son, Jong Yeog; Kim, Hyungjun.

In: IOP Conference Series: Materials Science and Engineering, Vol. 6, 012019, 01.12.2009.

Research output: Contribution to journalConference article

TY - JOUR

T1 - SiGe nanostructure fabrication through selective epitaxial growth using self-assembled nanotemplates

AU - Park, Sang Joon

AU - Hwang, In Chan

AU - Lee, Heung Soon

AU - Son, Jong Yeog

AU - Kim, Hyungjun

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Ordered SiGe nanostructures including nanodots (NDs) and nanowires (NWs) were fabricated via selective epitaxial growth (SEG) of SiGe using ultrahigh vacuum chemical vapour deposition (UHV-CVD) on Si openings fabricated using self-assembled nanotemplates of anodic anluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-block-polymethylmethacrylate (PS-b-PMMA), exhibiting hexagonally arranged nanoholes. SiGe SEG was processed through repeating the unit cycle composed of two separated steps of SiGe growth using disilane (Si2H6) and Germane (GeH4) and chlorine (Cl2 exposure. Cl2 was used to improve the selectivity of SiGe SEG between the Si openings and the oxide area. Ordered SiGe NDs and NWs were fabricated through SiGe SEG of 20 cycles and 400 cycles on AAO/Si, respectively. In addition, ordered SiGe NDs were obtained via SiGe SEG of 20 cycles on SiO2 template, fabricated through pattern transfer of nanoholes of PS-b-PMMA to SiO2/Si. SiGe nanostructure fabrication using both AAO and PS-b-PMMA showed good replication of the nanohole size of the nanotemplates.

AB - Ordered SiGe nanostructures including nanodots (NDs) and nanowires (NWs) were fabricated via selective epitaxial growth (SEG) of SiGe using ultrahigh vacuum chemical vapour deposition (UHV-CVD) on Si openings fabricated using self-assembled nanotemplates of anodic anluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-block-polymethylmethacrylate (PS-b-PMMA), exhibiting hexagonally arranged nanoholes. SiGe SEG was processed through repeating the unit cycle composed of two separated steps of SiGe growth using disilane (Si2H6) and Germane (GeH4) and chlorine (Cl2 exposure. Cl2 was used to improve the selectivity of SiGe SEG between the Si openings and the oxide area. Ordered SiGe NDs and NWs were fabricated through SiGe SEG of 20 cycles and 400 cycles on AAO/Si, respectively. In addition, ordered SiGe NDs were obtained via SiGe SEG of 20 cycles on SiO2 template, fabricated through pattern transfer of nanoholes of PS-b-PMMA to SiO2/Si. SiGe nanostructure fabrication using both AAO and PS-b-PMMA showed good replication of the nanohole size of the nanotemplates.

UR - http://www.scopus.com/inward/record.url?scp=84893437991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893437991&partnerID=8YFLogxK

U2 - 10.1088/1757-899X/6/1/012019

DO - 10.1088/1757-899X/6/1/012019

M3 - Conference article

AN - SCOPUS:84893437991

VL - 6

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

SN - 1757-8981

M1 - 012019

ER -