SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma

Seran Park, Kyu Dong Kim, Hoon Jung Oh, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Herein, we investigated the effects of processing conditions on the surface morphology of SiGe subjected to dry cleaning with NF3/H2O plasma, characterizing dry-cleaned samples by several instrumental techniques and revealing the generation of 80-250-nm-wide bumps on the SiGe surface. The formation of these bumps resulted in increased surface roughness and was found to be correlated with the H2O flow rate. Based on the above observations, an additional guideline for evaluating the SiGe cleaning process was proposed.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages348-350
Number of pages3
ISBN (Electronic)9781538665084
DOIs
Publication statusPublished - 2019 Mar 1
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 2019 Mar 122019 Mar 15

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period19/3/1219/3/15

Fingerprint

Dry cleaning
cleaning
Surface morphology
Cleaning
Surface roughness
Flow rate
Plasmas
Processing
surface roughness
flow velocity

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

Cite this

Park, S., Kim, K. D., Oh, H. J., & Ko, D. H. (2019). SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 348-350). [8731213] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731213
Park, Seran ; Kim, Kyu Dong ; Oh, Hoon Jung ; Ko, Dae Hong. / SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 348-350 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).
@inproceedings{c1d4d28e1a3545c3ae14f6e35fc6c381,
title = "SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma",
abstract = "Herein, we investigated the effects of processing conditions on the surface morphology of SiGe subjected to dry cleaning with NF3/H2O plasma, characterizing dry-cleaned samples by several instrumental techniques and revealing the generation of 80-250-nm-wide bumps on the SiGe surface. The formation of these bumps resulted in increased surface roughness and was found to be correlated with the H2O flow rate. Based on the above observations, an additional guideline for evaluating the SiGe cleaning process was proposed.",
author = "Seran Park and Kim, {Kyu Dong} and Oh, {Hoon Jung} and Ko, {Dae Hong}",
year = "2019",
month = "3",
day = "1",
doi = "10.1109/EDTM.2019.8731213",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "348--350",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
address = "United States",

}

Park, S, Kim, KD, Oh, HJ & Ko, DH 2019, SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731213, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 348-350, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 19/3/12. https://doi.org/10.1109/EDTM.2019.8731213

SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma. / Park, Seran; Kim, Kyu Dong; Oh, Hoon Jung; Ko, Dae Hong.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 348-350 8731213 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma

AU - Park, Seran

AU - Kim, Kyu Dong

AU - Oh, Hoon Jung

AU - Ko, Dae Hong

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Herein, we investigated the effects of processing conditions on the surface morphology of SiGe subjected to dry cleaning with NF3/H2O plasma, characterizing dry-cleaned samples by several instrumental techniques and revealing the generation of 80-250-nm-wide bumps on the SiGe surface. The formation of these bumps resulted in increased surface roughness and was found to be correlated with the H2O flow rate. Based on the above observations, an additional guideline for evaluating the SiGe cleaning process was proposed.

AB - Herein, we investigated the effects of processing conditions on the surface morphology of SiGe subjected to dry cleaning with NF3/H2O plasma, characterizing dry-cleaned samples by several instrumental techniques and revealing the generation of 80-250-nm-wide bumps on the SiGe surface. The formation of these bumps resulted in increased surface roughness and was found to be correlated with the H2O flow rate. Based on the above observations, an additional guideline for evaluating the SiGe cleaning process was proposed.

UR - http://www.scopus.com/inward/record.url?scp=85067825631&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85067825631&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2019.8731213

DO - 10.1109/EDTM.2019.8731213

M3 - Conference contribution

AN - SCOPUS:85067825631

T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 348

EP - 350

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Park S, Kim KD, Oh HJ, Ko DH. SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 348-350. 8731213. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). https://doi.org/10.1109/EDTM.2019.8731213