SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma

Seran Park, Kyu Dong Kim, Hoon Jung Oh, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Herein, we investigated the effects of processing conditions on the surface morphology of SiGe subjected to dry cleaning with NF3/H2O plasma, characterizing dry-cleaned samples by several instrumental techniques and revealing the generation of 80-250-nm-wide bumps on the SiGe surface. The formation of these bumps resulted in increased surface roughness and was found to be correlated with the H2O flow rate. Based on the above observations, an additional guideline for evaluating the SiGe cleaning process was proposed.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages348-350
Number of pages3
ISBN (Electronic)9781538665084
DOIs
Publication statusPublished - 2019 Mar 1
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 2019 Mar 122019 Mar 15

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period19/3/1219/3/15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

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    Park, S., Kim, K. D., Oh, H. J., & Ko, D. H. (2019). SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 348-350). [8731213] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731213