SiGe T/R modules for Ka-band phased arrays (Invited)

Byung Wook Min, Michael Chang, Gabriel M. Rebeiz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

This paper presents a T/R (transmit/receive) module for Ka-band phased arrays using a 0.12μm SiGe BiCMOS process. The T/R module consists of a low noise amplifier (LNA), power amplifier (PA), 4-bit phase shifter, and single-pole-double-throw (SPDT) switches. The LNA and PA are implemented using SiGe HBTs, and the phase shifter and SPDT switches are based on CMOS switches. The LNA achieves 23.5dB gain and 2.9dB noise figure at 34GHz. The 42% fractional-bandwidth PA has a small-signal gain of 13dB and a saturated output power of 19.4dBm with 11.2% PAE from 32 to 33GHz. The RMS phase error of the 4-bit phase shifter is less than 7.5° from 30-38GHz. This paper presents the individual components of the BiCMOS T/R module, and the entire T/R module performance will be measured and presented at the conference.

Original languageEnglish
Title of host publication29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium
Subtitle of host publication"Tastes of the Northwest" - Technical Digest 2007
Pages124-127
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Event29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest" - Portland, OR, United States
Duration: 2007 Oct 142007 Oct 17

Publication series

NameTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)1550-8781

Other

Other29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest"
CountryUnited States
CityPortland, OR
Period07/10/1407/10/17

Fingerprint

Low noise amplifiers
Phase shifters
Power amplifiers
Switches
Poles
Heterojunction bipolar transistors
Noise figure
Bandwidth

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Min, B. W., Chang, M., & Rebeiz, G. M. (2007). SiGe T/R modules for Ka-band phased arrays (Invited). In 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest" - Technical Digest 2007 (pp. 124-127). [4384414] (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS07.2007.34
Min, Byung Wook ; Chang, Michael ; Rebeiz, Gabriel M. / SiGe T/R modules for Ka-band phased arrays (Invited). 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest" - Technical Digest 2007. 2007. pp. 124-127 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).
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Min, BW, Chang, M & Rebeiz, GM 2007, SiGe T/R modules for Ka-band phased arrays (Invited). in 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest" - Technical Digest 2007., 4384414, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, pp. 124-127, 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest", Portland, OR, United States, 07/10/14. https://doi.org/10.1109/CSICS07.2007.34

SiGe T/R modules for Ka-band phased arrays (Invited). / Min, Byung Wook; Chang, Michael; Rebeiz, Gabriel M.

29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest" - Technical Digest 2007. 2007. p. 124-127 4384414 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - This paper presents a T/R (transmit/receive) module for Ka-band phased arrays using a 0.12μm SiGe BiCMOS process. The T/R module consists of a low noise amplifier (LNA), power amplifier (PA), 4-bit phase shifter, and single-pole-double-throw (SPDT) switches. The LNA and PA are implemented using SiGe HBTs, and the phase shifter and SPDT switches are based on CMOS switches. The LNA achieves 23.5dB gain and 2.9dB noise figure at 34GHz. The 42% fractional-bandwidth PA has a small-signal gain of 13dB and a saturated output power of 19.4dBm with 11.2% PAE from 32 to 33GHz. The RMS phase error of the 4-bit phase shifter is less than 7.5° from 30-38GHz. This paper presents the individual components of the BiCMOS T/R module, and the entire T/R module performance will be measured and presented at the conference.

AB - This paper presents a T/R (transmit/receive) module for Ka-band phased arrays using a 0.12μm SiGe BiCMOS process. The T/R module consists of a low noise amplifier (LNA), power amplifier (PA), 4-bit phase shifter, and single-pole-double-throw (SPDT) switches. The LNA and PA are implemented using SiGe HBTs, and the phase shifter and SPDT switches are based on CMOS switches. The LNA achieves 23.5dB gain and 2.9dB noise figure at 34GHz. The 42% fractional-bandwidth PA has a small-signal gain of 13dB and a saturated output power of 19.4dBm with 11.2% PAE from 32 to 33GHz. The RMS phase error of the 4-bit phase shifter is less than 7.5° from 30-38GHz. This paper presents the individual components of the BiCMOS T/R module, and the entire T/R module performance will be measured and presented at the conference.

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Min BW, Chang M, Rebeiz GM. SiGe T/R modules for Ka-band phased arrays (Invited). In 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest" - Technical Digest 2007. 2007. p. 124-127. 4384414. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS07.2007.34