SiGeC alloy layer formation by high-dose C+ implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)

S. Im, J. H. Song, D. Y.C. Lie, F. Eisen, H. Atwater, M. A. Nicolet

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Dual-energy carbon implantation (1 × 1016/cm2 at 150 and at 220 keV) was performed on 260-nm-thick undoped metastable pseudomorphic Si(100)/ Ge0.08Si0.92 with a 450-nm-thick SiO2 capping layer, at either room temperature or at 100°C. After removal of the SiO2 the samples were measured using backscattering/channeling spectrometry and double-crystal x-ray diffractometry. A 150-nm-thick amorphous layer was observed in the room temperature implanted samples. This layer was found to have regrown epitaxially after sequential annealing at 550°C for 2 h plus at 700°C for 30 min. Following this anneal, tensile strain, believed to result from a large fraction of substitutional carbon in the regrown layer, was observed. Compressive strain, that presumably arises from the damaged but nonamorphized portion of the GeSi layer, was also observed. This strain was not significantly affected by the annealing treatment. For the samples implanted at 100°C, in which case no amorphous layer was produced, only compressive strain was observed. For samples implanted at both room temperature and 100°C, the channelled backscattering yield from the Si substrate was the same as that of the virgin sample.

Original languageEnglish
Pages (from-to)1700-1703
Number of pages4
JournalJournal of Applied Physics
Volume81
Issue number4
DOIs
Publication statusPublished - 1997 Feb 15

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implantation
dosage
backscattering
room temperature
annealing
carbon
spectroscopy
crystals
x rays
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Im, S. ; Song, J. H. ; Lie, D. Y.C. ; Eisen, F. ; Atwater, H. ; Nicolet, M. A. / SiGeC alloy layer formation by high-dose C+ implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100). In: Journal of Applied Physics. 1997 ; Vol. 81, No. 4. pp. 1700-1703.
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abstract = "Dual-energy carbon implantation (1 × 1016/cm2 at 150 and at 220 keV) was performed on 260-nm-thick undoped metastable pseudomorphic Si(100)/ Ge0.08Si0.92 with a 450-nm-thick SiO2 capping layer, at either room temperature or at 100°C. After removal of the SiO2 the samples were measured using backscattering/channeling spectrometry and double-crystal x-ray diffractometry. A 150-nm-thick amorphous layer was observed in the room temperature implanted samples. This layer was found to have regrown epitaxially after sequential annealing at 550°C for 2 h plus at 700°C for 30 min. Following this anneal, tensile strain, believed to result from a large fraction of substitutional carbon in the regrown layer, was observed. Compressive strain, that presumably arises from the damaged but nonamorphized portion of the GeSi layer, was also observed. This strain was not significantly affected by the annealing treatment. For the samples implanted at 100°C, in which case no amorphous layer was produced, only compressive strain was observed. For samples implanted at both room temperature and 100°C, the channelled backscattering yield from the Si substrate was the same as that of the virgin sample.",
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SiGeC alloy layer formation by high-dose C+ implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100). / Im, S.; Song, J. H.; Lie, D. Y.C.; Eisen, F.; Atwater, H.; Nicolet, M. A.

In: Journal of Applied Physics, Vol. 81, No. 4, 15.02.1997, p. 1700-1703.

Research output: Contribution to journalArticle

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AU - Im, S.

AU - Song, J. H.

AU - Lie, D. Y.C.

AU - Eisen, F.

AU - Atwater, H.

AU - Nicolet, M. A.

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N2 - Dual-energy carbon implantation (1 × 1016/cm2 at 150 and at 220 keV) was performed on 260-nm-thick undoped metastable pseudomorphic Si(100)/ Ge0.08Si0.92 with a 450-nm-thick SiO2 capping layer, at either room temperature or at 100°C. After removal of the SiO2 the samples were measured using backscattering/channeling spectrometry and double-crystal x-ray diffractometry. A 150-nm-thick amorphous layer was observed in the room temperature implanted samples. This layer was found to have regrown epitaxially after sequential annealing at 550°C for 2 h plus at 700°C for 30 min. Following this anneal, tensile strain, believed to result from a large fraction of substitutional carbon in the regrown layer, was observed. Compressive strain, that presumably arises from the damaged but nonamorphized portion of the GeSi layer, was also observed. This strain was not significantly affected by the annealing treatment. For the samples implanted at 100°C, in which case no amorphous layer was produced, only compressive strain was observed. For samples implanted at both room temperature and 100°C, the channelled backscattering yield from the Si substrate was the same as that of the virgin sample.

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