Significant enhancement of the dielectric constant through the doping of CeO 2 into HfO 2 by atomic layer deposition

Woo Hee Kim, Min Kyu Kim, Il Kwon Oh, Wan Joo Maeng, Taehoon Cheon, Soo Hyun Kim, Atif Noori, David Thompson, Schubert Chu, Hyungjun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Films of CeO2 were deposited by atomic layer deposition (ALD) using a Ce(mmp)4 [mmp = 1-methoxy-2-methyl-2-propanolate] precursor and H2O reactant. The growth characteristics and film properties of ALD CeO2 were investigated. The ALD CeO2 process produced highly pure, stoichiometric films with polycrystalline cubic phases. Using the ALD CeO2 process, the effects of Ce doping into an HfO2 gate dielectric were systematically investigated. Regardless of Ce/(Ce + Hf) composition, all ALD CexHf1-xO2 films exhibited constant growth rates of approximately 1.3 Å/cycle, which is essentially identical to the ALD HfO2 growth rates. After high-temperature vacuum annealing at 900°C, it was verified, based on X-ray diffraction and high-resolution cross-sectional transmission electron microscopy results, that all samples with various Ce/(Ce + Hf) compositions were transformed from nanocrystalline to stabilized cubic or tetragonal HfO2 phases. In addition, the dielectric constant of the CexHf1-xO 2 films significantly increased, depending on the Ce doping content. The maximum dielectric constant value was found to be nearly 39 for the Ce/(Ce + Hf) concentration of ~11%.

Original languageEnglish
Pages (from-to)1164-1169
Number of pages6
JournalJournal of the American Ceramic Society
Volume97
Issue number4
DOIs
Publication statusPublished - 2014 Jan 1

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Atomic layer deposition
Permittivity
Doping (additives)
Gate dielectrics
annealing
Chemical analysis
transmission electron microscopy
X-ray diffraction
Vacuum
Annealing
Transmission electron microscopy
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Geology
  • Geochemistry and Petrology
  • Materials Chemistry

Cite this

Kim, Woo Hee ; Kim, Min Kyu ; Oh, Il Kwon ; Maeng, Wan Joo ; Cheon, Taehoon ; Kim, Soo Hyun ; Noori, Atif ; Thompson, David ; Chu, Schubert ; Kim, Hyungjun. / Significant enhancement of the dielectric constant through the doping of CeO 2 into HfO 2 by atomic layer deposition. In: Journal of the American Ceramic Society. 2014 ; Vol. 97, No. 4. pp. 1164-1169.
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Significant enhancement of the dielectric constant through the doping of CeO 2 into HfO 2 by atomic layer deposition. / Kim, Woo Hee; Kim, Min Kyu; Oh, Il Kwon; Maeng, Wan Joo; Cheon, Taehoon; Kim, Soo Hyun; Noori, Atif; Thompson, David; Chu, Schubert; Kim, Hyungjun.

In: Journal of the American Ceramic Society, Vol. 97, No. 4, 01.01.2014, p. 1164-1169.

Research output: Contribution to journalArticle

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T1 - Significant enhancement of the dielectric constant through the doping of CeO 2 into HfO 2 by atomic layer deposition

AU - Kim, Woo Hee

AU - Kim, Min Kyu

AU - Oh, Il Kwon

AU - Maeng, Wan Joo

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AU - Noori, Atif

AU - Thompson, David

AU - Chu, Schubert

AU - Kim, Hyungjun

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N2 - Films of CeO2 were deposited by atomic layer deposition (ALD) using a Ce(mmp)4 [mmp = 1-methoxy-2-methyl-2-propanolate] precursor and H2O reactant. The growth characteristics and film properties of ALD CeO2 were investigated. The ALD CeO2 process produced highly pure, stoichiometric films with polycrystalline cubic phases. Using the ALD CeO2 process, the effects of Ce doping into an HfO2 gate dielectric were systematically investigated. Regardless of Ce/(Ce + Hf) composition, all ALD CexHf1-xO2 films exhibited constant growth rates of approximately 1.3 Å/cycle, which is essentially identical to the ALD HfO2 growth rates. After high-temperature vacuum annealing at 900°C, it was verified, based on X-ray diffraction and high-resolution cross-sectional transmission electron microscopy results, that all samples with various Ce/(Ce + Hf) compositions were transformed from nanocrystalline to stabilized cubic or tetragonal HfO2 phases. In addition, the dielectric constant of the CexHf1-xO 2 films significantly increased, depending on the Ce doping content. The maximum dielectric constant value was found to be nearly 39 for the Ce/(Ce + Hf) concentration of ~11%.

AB - Films of CeO2 were deposited by atomic layer deposition (ALD) using a Ce(mmp)4 [mmp = 1-methoxy-2-methyl-2-propanolate] precursor and H2O reactant. The growth characteristics and film properties of ALD CeO2 were investigated. The ALD CeO2 process produced highly pure, stoichiometric films with polycrystalline cubic phases. Using the ALD CeO2 process, the effects of Ce doping into an HfO2 gate dielectric were systematically investigated. Regardless of Ce/(Ce + Hf) composition, all ALD CexHf1-xO2 films exhibited constant growth rates of approximately 1.3 Å/cycle, which is essentially identical to the ALD HfO2 growth rates. After high-temperature vacuum annealing at 900°C, it was verified, based on X-ray diffraction and high-resolution cross-sectional transmission electron microscopy results, that all samples with various Ce/(Ce + Hf) compositions were transformed from nanocrystalline to stabilized cubic or tetragonal HfO2 phases. In addition, the dielectric constant of the CexHf1-xO 2 films significantly increased, depending on the Ce doping content. The maximum dielectric constant value was found to be nearly 39 for the Ce/(Ce + Hf) concentration of ~11%.

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