Silicide formation by solid-state diffusion in MO/Si multilayer thin films

Eungjoon Chi, Jaeyeob Shim, Joonseop Kwak, Hong Koo Baik

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The solid-state reaction of Mo/Si multilayer thin films produced by the r.f. magnetron sputtering technique was examined using differential scanning calorimetry (DSC) and X-ray diffraction and was explained by the concepts of effective driving force and effective heat of formation. In constant scanning-rate DSC, there were two exothermic peaks representing the formation of h-MoSi2 and t-MoSi2, respectively. The activation energy for the formation of h-MoSi2 was 1.5 eV, and that of t-MoSi2 was 7.8 eV. Nucleation was the rate-controlling mechanism for each suicide formation. The amorphous phase was not formed in the Mo/Si system as predicted by the concept of effective driving force. h-MoSi2, the first crystalline phase, was considered to have lower interfacial free energy than t-MoSi2, and by increasing the temperature, it was transformed into more stable t-MoSi2.

Original languageEnglish
Pages (from-to)3567-3572
Number of pages6
JournalJournal of Materials Science
Volume31
Issue number13
DOIs
Publication statusPublished - 1996 Jan 1

Fingerprint

Multilayer films
Differential scanning calorimetry
Thin films
Solid state reactions
Magnetron sputtering
Free energy
Nucleation
Activation energy
Crystalline materials
Scanning
X ray diffraction
Temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chi, Eungjoon ; Shim, Jaeyeob ; Kwak, Joonseop ; Baik, Hong Koo. / Silicide formation by solid-state diffusion in MO/Si multilayer thin films. In: Journal of Materials Science. 1996 ; Vol. 31, No. 13. pp. 3567-3572.
@article{60edae70ac354baeaab8ac4340d0c406,
title = "Silicide formation by solid-state diffusion in MO/Si multilayer thin films",
abstract = "The solid-state reaction of Mo/Si multilayer thin films produced by the r.f. magnetron sputtering technique was examined using differential scanning calorimetry (DSC) and X-ray diffraction and was explained by the concepts of effective driving force and effective heat of formation. In constant scanning-rate DSC, there were two exothermic peaks representing the formation of h-MoSi2 and t-MoSi2, respectively. The activation energy for the formation of h-MoSi2 was 1.5 eV, and that of t-MoSi2 was 7.8 eV. Nucleation was the rate-controlling mechanism for each suicide formation. The amorphous phase was not formed in the Mo/Si system as predicted by the concept of effective driving force. h-MoSi2, the first crystalline phase, was considered to have lower interfacial free energy than t-MoSi2, and by increasing the temperature, it was transformed into more stable t-MoSi2.",
author = "Eungjoon Chi and Jaeyeob Shim and Joonseop Kwak and Baik, {Hong Koo}",
year = "1996",
month = "1",
day = "1",
doi = "10.1007/BF00360763",
language = "English",
volume = "31",
pages = "3567--3572",
journal = "Journal of Materials Science",
issn = "0022-2461",
publisher = "Springer Netherlands",
number = "13",

}

Silicide formation by solid-state diffusion in MO/Si multilayer thin films. / Chi, Eungjoon; Shim, Jaeyeob; Kwak, Joonseop; Baik, Hong Koo.

In: Journal of Materials Science, Vol. 31, No. 13, 01.01.1996, p. 3567-3572.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Silicide formation by solid-state diffusion in MO/Si multilayer thin films

AU - Chi, Eungjoon

AU - Shim, Jaeyeob

AU - Kwak, Joonseop

AU - Baik, Hong Koo

PY - 1996/1/1

Y1 - 1996/1/1

N2 - The solid-state reaction of Mo/Si multilayer thin films produced by the r.f. magnetron sputtering technique was examined using differential scanning calorimetry (DSC) and X-ray diffraction and was explained by the concepts of effective driving force and effective heat of formation. In constant scanning-rate DSC, there were two exothermic peaks representing the formation of h-MoSi2 and t-MoSi2, respectively. The activation energy for the formation of h-MoSi2 was 1.5 eV, and that of t-MoSi2 was 7.8 eV. Nucleation was the rate-controlling mechanism for each suicide formation. The amorphous phase was not formed in the Mo/Si system as predicted by the concept of effective driving force. h-MoSi2, the first crystalline phase, was considered to have lower interfacial free energy than t-MoSi2, and by increasing the temperature, it was transformed into more stable t-MoSi2.

AB - The solid-state reaction of Mo/Si multilayer thin films produced by the r.f. magnetron sputtering technique was examined using differential scanning calorimetry (DSC) and X-ray diffraction and was explained by the concepts of effective driving force and effective heat of formation. In constant scanning-rate DSC, there were two exothermic peaks representing the formation of h-MoSi2 and t-MoSi2, respectively. The activation energy for the formation of h-MoSi2 was 1.5 eV, and that of t-MoSi2 was 7.8 eV. Nucleation was the rate-controlling mechanism for each suicide formation. The amorphous phase was not formed in the Mo/Si system as predicted by the concept of effective driving force. h-MoSi2, the first crystalline phase, was considered to have lower interfacial free energy than t-MoSi2, and by increasing the temperature, it was transformed into more stable t-MoSi2.

UR - http://www.scopus.com/inward/record.url?scp=0030188968&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030188968&partnerID=8YFLogxK

U2 - 10.1007/BF00360763

DO - 10.1007/BF00360763

M3 - Article

AN - SCOPUS:0030188968

VL - 31

SP - 3567

EP - 3572

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 13

ER -