Abstract
CoSi 2 was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt (Co(iPr-AMD) 2) as a precursor and NH 3 as a reactant; this reaction produced a highly conformal Co film with low resistivity (50 μ?cm). To prevent oxygen contamination, ex-situ sputtered Ti and in-situ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and O 2 as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect o ratio. X-ray diffraction showed that CoSi 2 was in a poly-crystalline state and formed at over 800 C of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, CoSi 2 about 40 nm thick was formed while the SiO x interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of CoSi 2.
| Original language | English |
|---|---|
| Pages (from-to) | 202-206 |
| Number of pages | 5 |
| Journal | Korean Journal of Materials Research |
| Volume | 22 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2012 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Silicide formation of atomic layer deposition Co using Ti and Ru capping layer. / Yoon, Jaehong; Lee, Han Bo Ram; Gu, Gil Ho; Park, Chan Gyung; Kim, Hyungjun.
In: Korean Journal of Materials Research, Vol. 22, No. 4, 01.04.2012, p. 202-206.Research output: Contribution to journal › Article
TY - JOUR
T1 - Silicide formation of atomic layer deposition Co using Ti and Ru capping layer
AU - Yoon, Jaehong
AU - Lee, Han Bo Ram
AU - Gu, Gil Ho
AU - Park, Chan Gyung
AU - Kim, Hyungjun
PY - 2012/4/1
Y1 - 2012/4/1
N2 - CoSi 2 was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt (Co(iPr-AMD) 2) as a precursor and NH 3 as a reactant; this reaction produced a highly conformal Co film with low resistivity (50 μ?cm). To prevent oxygen contamination, ex-situ sputtered Ti and in-situ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and O 2 as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect o ratio. X-ray diffraction showed that CoSi 2 was in a poly-crystalline state and formed at over 800 C of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, CoSi 2 about 40 nm thick was formed while the SiO x interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of CoSi 2.
AB - CoSi 2 was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt (Co(iPr-AMD) 2) as a precursor and NH 3 as a reactant; this reaction produced a highly conformal Co film with low resistivity (50 μ?cm). To prevent oxygen contamination, ex-situ sputtered Ti and in-situ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and O 2 as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect o ratio. X-ray diffraction showed that CoSi 2 was in a poly-crystalline state and formed at over 800 C of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, CoSi 2 about 40 nm thick was formed while the SiO x interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of CoSi 2.
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U2 - 10.3740/MRSK.2012.22.4.202
DO - 10.3740/MRSK.2012.22.4.202
M3 - Article
AN - SCOPUS:84867299187
VL - 22
SP - 202
EP - 206
JO - Korean Journal of Materials Research
JF - Korean Journal of Materials Research
SN - 1225-0562
IS - 4
ER -