Silicide formation of atomic layer deposition Co using Ti and Ru capping layer

Jaehong Yoon, Han Bo Ram Lee, Gil Ho Gu, Chan Gyung Park, Hyungjun Kim

Research output: Contribution to journalArticle

Abstract

CoSi 2 was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt (Co(iPr-AMD) 2) as a precursor and NH 3 as a reactant; this reaction produced a highly conformal Co film with low resistivity (50 μ?cm). To prevent oxygen contamination, ex-situ sputtered Ti and in-situ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and O 2 as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect o ratio. X-ray diffraction showed that CoSi 2 was in a poly-crystalline state and formed at over 800 C of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, CoSi 2 about 40 nm thick was formed while the SiO x interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of CoSi 2.

Original languageEnglish
Pages (from-to)202-206
Number of pages5
JournalKorean Journal of Materials Research
Volume22
Issue number4
DOIs
Publication statusPublished - 2012 Apr 1

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Atomic layer deposition
Scavenging
Annealing
Oxygen
Ruthenium
Rapid thermal annealing
Electron energy loss spectroscopy
Cobalt
Oxides
Aspect ratio
Contamination
Crystalline materials
Transmission electron microscopy
X ray diffraction
Thin films
Oxidation
Scanning electron microscopy
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Yoon, Jaehong ; Lee, Han Bo Ram ; Gu, Gil Ho ; Park, Chan Gyung ; Kim, Hyungjun. / Silicide formation of atomic layer deposition Co using Ti and Ru capping layer. In: Korean Journal of Materials Research. 2012 ; Vol. 22, No. 4. pp. 202-206.
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abstract = "CoSi 2 was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt (Co(iPr-AMD) 2) as a precursor and NH 3 as a reactant; this reaction produced a highly conformal Co film with low resistivity (50 μ?cm). To prevent oxygen contamination, ex-situ sputtered Ti and in-situ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and O 2 as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90{\%} in structure of high aspect o ratio. X-ray diffraction showed that CoSi 2 was in a poly-crystalline state and formed at over 800 C of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, CoSi 2 about 40 nm thick was formed while the SiO x interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of CoSi 2.",
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Silicide formation of atomic layer deposition Co using Ti and Ru capping layer. / Yoon, Jaehong; Lee, Han Bo Ram; Gu, Gil Ho; Park, Chan Gyung; Kim, Hyungjun.

In: Korean Journal of Materials Research, Vol. 22, No. 4, 01.04.2012, p. 202-206.

Research output: Contribution to journalArticle

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N2 - CoSi 2 was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt (Co(iPr-AMD) 2) as a precursor and NH 3 as a reactant; this reaction produced a highly conformal Co film with low resistivity (50 μ?cm). To prevent oxygen contamination, ex-situ sputtered Ti and in-situ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and O 2 as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect o ratio. X-ray diffraction showed that CoSi 2 was in a poly-crystalline state and formed at over 800 C of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, CoSi 2 about 40 nm thick was formed while the SiO x interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of CoSi 2.

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