Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography

Sang Kyun Kim, Hyeon Mo Cho, Sang Ran Koh, Mi Young Kim, Hui Chan Yoon, Yong Jin Chung, Jong Seob Kim, Tuwon Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

In current semiconductor manufacturing processes, hardmasks have become more prevalent in patterning of small features. A silicon-containing hardmask, which can be spun onto wafers, is desirable in terms of mass production throughput and cost of ownership. Previously, we reported a paper on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography. In this paper, hardmask materials for 45 nm pattern of immersion ArF lithography are described. To achieve 45 nm patterning, a different base resin platform from the previous paper has been used. Furthermore, we have improved the etch resistance by changing our synthesis method without modifying the resin platform and silicon contents. Despite these changes, an excellent storage stability, which is one of the essential requirements for the materials, is still maintained. Characterization and lithographic performance of 45 nm immersion ArF lithography using our new materials are described in detail.

Original languageEnglish
Title of host publicationAdvances in Resist Materials and Processing Technology XXV
DOIs
Publication statusPublished - 2008 Dec 15
EventAdvances in Resist Materials and Processing Technology XXV - San Jose, CA, United States
Duration: 2008 Feb 252008 Feb 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6923
ISSN (Print)0277-786X

Other

OtherAdvances in Resist Materials and Processing Technology XXV
CountryUnited States
CitySan Jose, CA
Period08/2/2508/2/27

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kim, S. K., Cho, H. M., Koh, S. R., Kim, M. Y., Yoon, H. C., Chung, Y. J., Kim, J. S., & Chang, T. (2008). Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography. In Advances in Resist Materials and Processing Technology XXV [69232Q] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6923). https://doi.org/10.1117/12.773117