Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography

Sang Kyun Kim, Hyeon Mo Cho, Sang Ran Koh, Mi Young Kim, Hui Chan Yoon, Yong Jin Chung, Jong Seob Kim, Tuwon Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

In current semiconductor manufacturing processes, hardmasks have become more prevalent in patterning of small features. A silicon-containing hardmask, which can be spun onto wafers, is desirable in terms of mass production throughput and cost of ownership. Previously, we reported a paper on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography. In this paper, hardmask materials for 45 nm pattern of immersion ArF lithography are described. To achieve 45 nm patterning, a different base resin platform from the previous paper has been used. Furthermore, we have improved the etch resistance by changing our synthesis method without modifying the resin platform and silicon contents. Despite these changes, an excellent storage stability, which is one of the essential requirements for the materials, is still maintained. Characterization and lithographic performance of 45 nm immersion ArF lithography using our new materials are described in detail.

Original languageEnglish
Title of host publicationAdvances in Resist Materials and Processing Technology XXV
Volume6923
DOIs
Publication statusPublished - 2008 Dec 15
EventAdvances in Resist Materials and Processing Technology XXV - San Jose, CA, United States
Duration: 2008 Feb 252008 Feb 27

Other

OtherAdvances in Resist Materials and Processing Technology XXV
CountryUnited States
CitySan Jose, CA
Period08/2/2508/2/27

Fingerprint

Immersion Lithography
Silicon
Lithography
submerging
lithography
resins
silicon
Patterning
platforms
storage stability
Resins
Semiconductor Manufacturing
manufacturing
wafers
Wafer
costs
requirements
Throughput
Synthesis
synthesis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kim, S. K., Cho, H. M., Koh, S. R., Kim, M. Y., Yoon, H. C., Chung, Y. J., ... Chang, T. (2008). Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography. In Advances in Resist Materials and Processing Technology XXV (Vol. 6923). [69232Q] https://doi.org/10.1117/12.773117
Kim, Sang Kyun ; Cho, Hyeon Mo ; Koh, Sang Ran ; Kim, Mi Young ; Yoon, Hui Chan ; Chung, Yong Jin ; Kim, Jong Seob ; Chang, Tuwon. / Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography. Advances in Resist Materials and Processing Technology XXV. Vol. 6923 2008.
@inproceedings{3d07468a68a64e5aadac8081518b55c7,
title = "Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography",
abstract = "In current semiconductor manufacturing processes, hardmasks have become more prevalent in patterning of small features. A silicon-containing hardmask, which can be spun onto wafers, is desirable in terms of mass production throughput and cost of ownership. Previously, we reported a paper on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography. In this paper, hardmask materials for 45 nm pattern of immersion ArF lithography are described. To achieve 45 nm patterning, a different base resin platform from the previous paper has been used. Furthermore, we have improved the etch resistance by changing our synthesis method without modifying the resin platform and silicon contents. Despite these changes, an excellent storage stability, which is one of the essential requirements for the materials, is still maintained. Characterization and lithographic performance of 45 nm immersion ArF lithography using our new materials are described in detail.",
author = "Kim, {Sang Kyun} and Cho, {Hyeon Mo} and Koh, {Sang Ran} and Kim, {Mi Young} and Yoon, {Hui Chan} and Chung, {Yong Jin} and Kim, {Jong Seob} and Tuwon Chang",
year = "2008",
month = "12",
day = "15",
doi = "10.1117/12.773117",
language = "English",
isbn = "9780819471086",
volume = "6923",
booktitle = "Advances in Resist Materials and Processing Technology XXV",

}

Kim, SK, Cho, HM, Koh, SR, Kim, MY, Yoon, HC, Chung, YJ, Kim, JS & Chang, T 2008, Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography. in Advances in Resist Materials and Processing Technology XXV. vol. 6923, 69232Q, Advances in Resist Materials and Processing Technology XXV, San Jose, CA, United States, 08/2/25. https://doi.org/10.1117/12.773117

Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography. / Kim, Sang Kyun; Cho, Hyeon Mo; Koh, Sang Ran; Kim, Mi Young; Yoon, Hui Chan; Chung, Yong Jin; Kim, Jong Seob; Chang, Tuwon.

Advances in Resist Materials and Processing Technology XXV. Vol. 6923 2008. 69232Q.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography

AU - Kim, Sang Kyun

AU - Cho, Hyeon Mo

AU - Koh, Sang Ran

AU - Kim, Mi Young

AU - Yoon, Hui Chan

AU - Chung, Yong Jin

AU - Kim, Jong Seob

AU - Chang, Tuwon

PY - 2008/12/15

Y1 - 2008/12/15

N2 - In current semiconductor manufacturing processes, hardmasks have become more prevalent in patterning of small features. A silicon-containing hardmask, which can be spun onto wafers, is desirable in terms of mass production throughput and cost of ownership. Previously, we reported a paper on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography. In this paper, hardmask materials for 45 nm pattern of immersion ArF lithography are described. To achieve 45 nm patterning, a different base resin platform from the previous paper has been used. Furthermore, we have improved the etch resistance by changing our synthesis method without modifying the resin platform and silicon contents. Despite these changes, an excellent storage stability, which is one of the essential requirements for the materials, is still maintained. Characterization and lithographic performance of 45 nm immersion ArF lithography using our new materials are described in detail.

AB - In current semiconductor manufacturing processes, hardmasks have become more prevalent in patterning of small features. A silicon-containing hardmask, which can be spun onto wafers, is desirable in terms of mass production throughput and cost of ownership. Previously, we reported a paper on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography. In this paper, hardmask materials for 45 nm pattern of immersion ArF lithography are described. To achieve 45 nm patterning, a different base resin platform from the previous paper has been used. Furthermore, we have improved the etch resistance by changing our synthesis method without modifying the resin platform and silicon contents. Despite these changes, an excellent storage stability, which is one of the essential requirements for the materials, is still maintained. Characterization and lithographic performance of 45 nm immersion ArF lithography using our new materials are described in detail.

UR - http://www.scopus.com/inward/record.url?scp=57349123554&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57349123554&partnerID=8YFLogxK

U2 - 10.1117/12.773117

DO - 10.1117/12.773117

M3 - Conference contribution

AN - SCOPUS:57349123554

SN - 9780819471086

VL - 6923

BT - Advances in Resist Materials and Processing Technology XXV

ER -

Kim SK, Cho HM, Koh SR, Kim MY, Yoon HC, Chung YJ et al. Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography. In Advances in Resist Materials and Processing Technology XXV. Vol. 6923. 2008. 69232Q https://doi.org/10.1117/12.773117