We have developed a new technique using direct electron beam irradiation for the fabrication of silicon-based single electron transistors based on the traditional metal-oxide-semiconductor-field-effect structures. Using this technique, more than 10 devices have been fabricated and clear Coulomb oscillations are observed in most of samples. The period of Coulomb oscillations depends on the size of dot that is formed between two potential barriers induced by direct electron beam irradiation.
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. Part 1|
|Publication status||Published - 2001 Dec 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)