Silicon-based single electron transistor fabricated by direct electron beam irradiation

K. S. Park, Kyung-hwa Yoo, Jinhee Kim, Jung B. Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have developed a new technique using direct electron beam irradiation for the fabrication of silicon-based single electron transistors based on the traditional metal-oxide-semiconductor-field-effect structures. Using this technique, more than 10 devices have been fabricated and clear Coulomb oscillations are observed in most of samples. The period of Coulomb oscillations depends on the size of dot that is formed between two potential barriers induced by direct electron beam irradiation.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume39
Issue numberSUPPL. Part 1
Publication statusPublished - 2001 Dec 1

Fingerprint

single electron transistors
electron beams
oscillations
irradiation
silicon
metal oxide semiconductors
fabrication

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{27ba5d2db381411d839141afecd72def,
title = "Silicon-based single electron transistor fabricated by direct electron beam irradiation",
abstract = "We have developed a new technique using direct electron beam irradiation for the fabrication of silicon-based single electron transistors based on the traditional metal-oxide-semiconductor-field-effect structures. Using this technique, more than 10 devices have been fabricated and clear Coulomb oscillations are observed in most of samples. The period of Coulomb oscillations depends on the size of dot that is formed between two potential barriers induced by direct electron beam irradiation.",
author = "Park, {K. S.} and Kyung-hwa Yoo and Jinhee Kim and Choi, {Jung B.}",
year = "2001",
month = "12",
day = "1",
language = "English",
volume = "39",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SUPPL. Part 1",

}

Silicon-based single electron transistor fabricated by direct electron beam irradiation. / Park, K. S.; Yoo, Kyung-hwa; Kim, Jinhee; Choi, Jung B.

In: Journal of the Korean Physical Society, Vol. 39, No. SUPPL. Part 1, 01.12.2001.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Silicon-based single electron transistor fabricated by direct electron beam irradiation

AU - Park, K. S.

AU - Yoo, Kyung-hwa

AU - Kim, Jinhee

AU - Choi, Jung B.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - We have developed a new technique using direct electron beam irradiation for the fabrication of silicon-based single electron transistors based on the traditional metal-oxide-semiconductor-field-effect structures. Using this technique, more than 10 devices have been fabricated and clear Coulomb oscillations are observed in most of samples. The period of Coulomb oscillations depends on the size of dot that is formed between two potential barriers induced by direct electron beam irradiation.

AB - We have developed a new technique using direct electron beam irradiation for the fabrication of silicon-based single electron transistors based on the traditional metal-oxide-semiconductor-field-effect structures. Using this technique, more than 10 devices have been fabricated and clear Coulomb oscillations are observed in most of samples. The period of Coulomb oscillations depends on the size of dot that is formed between two potential barriers induced by direct electron beam irradiation.

UR - http://www.scopus.com/inward/record.url?scp=0035542198&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035542198&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035542198

VL - 39

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL. Part 1

ER -